GB2014364B - Semiconductor arrangement - Google Patents

Semiconductor arrangement

Info

Publication number
GB2014364B
GB2014364B GB7904807A GB7904807A GB2014364B GB 2014364 B GB2014364 B GB 2014364B GB 7904807 A GB7904807 A GB 7904807A GB 7904807 A GB7904807 A GB 7904807A GB 2014364 B GB2014364 B GB 2014364B
Authority
GB
United Kingdom
Prior art keywords
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7904807A
Other versions
GB2014364A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of GB2014364A publication Critical patent/GB2014364A/en
Application granted granted Critical
Publication of GB2014364B publication Critical patent/GB2014364B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
GB7904807A 1978-02-11 1979-02-12 Semiconductor arrangement Expired GB2014364B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782805813 DE2805813C3 (en) 1978-02-11 1978-02-11 l.PT 02/23/84 semiconductor arrangement SEMIKRON Gesellschaft für Gleichrichterbau u. Electronics mbH, 8500 Nuremberg, DE

Publications (2)

Publication Number Publication Date
GB2014364A GB2014364A (en) 1979-08-22
GB2014364B true GB2014364B (en) 1982-08-25

Family

ID=6031706

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7904807A Expired GB2014364B (en) 1978-02-11 1979-02-12 Semiconductor arrangement

Country Status (5)

Country Link
JP (1) JPS54114985A (en)
BR (1) BR7900858A (en)
DE (1) DE2805813C3 (en)
GB (1) GB2014364B (en)
SE (1) SE7901087L (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1981000962A1 (en) 1979-10-12 1981-04-16 Boehringer Sohn Ingelheim Antibiotic compounds,process for the preparation and pharmaceutical compositions thereof,methods of treatment therewith and staphylococcus bacteria
DE3046134C2 (en) * 1980-12-06 1982-11-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Optically ignitable bidirectional thyristor
GB2097328B (en) * 1981-04-24 1984-09-05 Glaverbel Laminated reflective panels
JPS6074677A (en) * 1983-09-30 1985-04-26 Toshiba Corp Composite type thyristor
JP2008091705A (en) * 2006-10-03 2008-04-17 Mitsubishi Electric Corp Semiconductor device and manufacturing method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549961A (en) * 1968-06-19 1970-12-22 Int Rectifier Corp Triac structure and method of manufacture
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
DE2261666A1 (en) * 1972-12-16 1974-06-20 Semikron Gleichrichterbau TWO DIRECTIONAL THYRISTOR
CA1006987A (en) * 1973-05-04 1977-03-15 Michael W. Cresswell Dynamic isolation of high density conductivity modulation states in integrated circuits
US4238761A (en) * 1975-05-27 1980-12-09 Westinghouse Electric Corp. Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode
JPS51139280A (en) * 1975-05-27 1976-12-01 Mitsubishi Electric Corp Semi-conductor device and method of manufacturing the same

Also Published As

Publication number Publication date
DE2805813A1 (en) 1979-08-16
SE7901087L (en) 1979-08-12
BR7900858A (en) 1979-09-04
DE2805813B2 (en) 1980-04-30
GB2014364A (en) 1979-08-22
JPS54114985A (en) 1979-09-07
DE2805813C3 (en) 1984-02-23

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee