SE7901087L - SEMICONDUCTOR - Google Patents
SEMICONDUCTORInfo
- Publication number
- SE7901087L SE7901087L SE7901087A SE7901087A SE7901087L SE 7901087 L SE7901087 L SE 7901087L SE 7901087 A SE7901087 A SE 7901087A SE 7901087 A SE7901087 A SE 7901087A SE 7901087 L SE7901087 L SE 7901087L
- Authority
- SE
- Sweden
- Prior art keywords
- functional portions
- semiconductor
- contact surfaces
- portions
- wafer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Light Receiving Elements (AREA)
Abstract
A semiconductor device comprising a semiconductor body affording a pair of opposed contact surfaces at which contact electrodes 7, 9, 10 can be connected and having two or more separated functional portions, which portions may have like or unlike functions with a barrier 10 between the functional portions extending at least partly through the wafer from at least one of the contact surfaces and comprising crystal lattice faults formed by electron irradiation of the body between the functional portions. <IMAGE>
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782805813 DE2805813C3 (en) | 1978-02-11 | 1978-02-11 | l.PT 02/23/84 semiconductor arrangement SEMIKRON Gesellschaft für Gleichrichterbau u. Electronics mbH, 8500 Nuremberg, DE |
Publications (1)
Publication Number | Publication Date |
---|---|
SE7901087L true SE7901087L (en) | 1979-08-12 |
Family
ID=6031706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7901087A SE7901087L (en) | 1978-02-11 | 1979-02-07 | SEMICONDUCTOR |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS54114985A (en) |
BR (1) | BR7900858A (en) |
DE (1) | DE2805813C3 (en) |
GB (1) | GB2014364B (en) |
SE (1) | SE7901087L (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1981000962A1 (en) | 1979-10-12 | 1981-04-16 | Boehringer Sohn Ingelheim | Antibiotic compounds,process for the preparation and pharmaceutical compositions thereof,methods of treatment therewith and staphylococcus bacteria |
DE3046134C2 (en) * | 1980-12-06 | 1982-11-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Optically ignitable bidirectional thyristor |
GB2097328B (en) * | 1981-04-24 | 1984-09-05 | Glaverbel | Laminated reflective panels |
JPS6074677A (en) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | Composite type thyristor |
JP2008091705A (en) * | 2006-10-03 | 2008-04-17 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method thereof |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3549961A (en) * | 1968-06-19 | 1970-12-22 | Int Rectifier Corp | Triac structure and method of manufacture |
US3727116A (en) * | 1970-05-05 | 1973-04-10 | Rca Corp | Integral thyristor-rectifier device |
DE2261666A1 (en) * | 1972-12-16 | 1974-06-20 | Semikron Gleichrichterbau | TWO DIRECTIONAL THYRISTOR |
CA1006987A (en) * | 1973-05-04 | 1977-03-15 | Michael W. Cresswell | Dynamic isolation of high density conductivity modulation states in integrated circuits |
US4238761A (en) * | 1975-05-27 | 1980-12-09 | Westinghouse Electric Corp. | Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode |
JPS51139280A (en) * | 1975-05-27 | 1976-12-01 | Mitsubishi Electric Corp | Semi-conductor device and method of manufacturing the same |
-
1978
- 1978-02-11 DE DE19782805813 patent/DE2805813C3/en not_active Expired
-
1979
- 1979-02-05 JP JP1150179A patent/JPS54114985A/en active Pending
- 1979-02-07 SE SE7901087A patent/SE7901087L/en not_active Application Discontinuation
- 1979-02-09 BR BR7900858A patent/BR7900858A/en unknown
- 1979-02-12 GB GB7904807A patent/GB2014364B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS54114985A (en) | 1979-09-07 |
DE2805813C3 (en) | 1984-02-23 |
BR7900858A (en) | 1979-09-04 |
DE2805813B2 (en) | 1980-04-30 |
GB2014364A (en) | 1979-08-22 |
DE2805813A1 (en) | 1979-08-16 |
GB2014364B (en) | 1982-08-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAV | Patent application has lapsed |
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