IT1084368B - Transistore di potenza con alta velocita' di spegnimento e mezzi per ottenerlo. - Google Patents
Transistore di potenza con alta velocita' di spegnimento e mezzi per ottenerlo.Info
- Publication number
- IT1084368B IT1084368B IT25518/77A IT2551877A IT1084368B IT 1084368 B IT1084368 B IT 1084368B IT 25518/77 A IT25518/77 A IT 25518/77A IT 2551877 A IT2551877 A IT 2551877A IT 1084368 B IT1084368 B IT 1084368B
- Authority
- IT
- Italy
- Prior art keywords
- high speed
- power transistor
- speed switching
- switching
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0646—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT25518/77A IT1084368B (it) | 1977-07-08 | 1977-07-08 | Transistore di potenza con alta velocita' di spegnimento e mezzi per ottenerlo. |
| FR7734720A FR2401524A1 (fr) | 1977-07-08 | 1977-11-18 | Transistor de puissance et procede permettant de l'obtenir |
| SE7714902A SE425201B (sv) | 1977-07-08 | 1977-12-29 | Effekttransistor av minoritesberartyp |
| GB859/78A GB1588691A (en) | 1977-07-08 | 1978-01-10 | Power transistor |
| DE2802799A DE2802799C2 (de) | 1977-07-08 | 1978-01-23 | Planartransistor und Verfahren zu seiner Herstellung |
| US05/922,505 US4205332A (en) | 1977-07-08 | 1978-07-06 | Quick-quenching power transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT25518/77A IT1084368B (it) | 1977-07-08 | 1977-07-08 | Transistore di potenza con alta velocita' di spegnimento e mezzi per ottenerlo. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1084368B true IT1084368B (it) | 1985-05-25 |
Family
ID=11216937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT25518/77A IT1084368B (it) | 1977-07-08 | 1977-07-08 | Transistore di potenza con alta velocita' di spegnimento e mezzi per ottenerlo. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4205332A (it) |
| DE (1) | DE2802799C2 (it) |
| FR (1) | FR2401524A1 (it) |
| GB (1) | GB1588691A (it) |
| IT (1) | IT1084368B (it) |
| SE (1) | SE425201B (it) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3017750C2 (de) * | 1980-05-09 | 1985-03-07 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Halbleiterbauelement vom Planar-Epitaxial-Typ mit mindestens einem bipolaren Leistungstransistor |
| EP0064613B1 (en) * | 1981-04-30 | 1986-10-29 | Kabushiki Kaisha Toshiba | Semiconductor device having a plurality of element units operable in parallel |
| FR2529389A1 (fr) * | 1982-06-25 | 1983-12-30 | Thomson Csf | Transistor de commutation de puissance a structure digitee |
| DE3345060A1 (de) * | 1982-12-15 | 1984-08-30 | Tokyo Shibaura Denki K.K., Kawasaki | Halbleitervorrichtung |
| US4796073A (en) * | 1986-11-14 | 1989-01-03 | Burr-Brown Corporation | Front-surface N+ gettering techniques for reducing noise in integrated circuits |
| GB2204445B (en) * | 1987-03-06 | 1991-04-24 | Texas Instruments Ltd | Semiconductor switch |
| EP0308667B1 (de) * | 1987-09-23 | 1994-05-25 | Siemens Aktiengesellschaft | Absaugelektrode zur Verkürzung der Ausschaltzeit bei einem Halbleiterbauelement |
| US5341020A (en) * | 1991-04-12 | 1994-08-23 | Sanken Electric Co., Ltd. | Integrated multicellular transistor chip for power switching applications |
| US5847436A (en) * | 1994-03-18 | 1998-12-08 | Kabushiki Kaisha Tokai Rika Denki Seisakusho | Bipolar transistor having integrated thermistor shunt |
| US6127723A (en) * | 1998-01-30 | 2000-10-03 | Sgs-Thomson Microelectronics, S.R.L. | Integrated device in an emitter-switching configuration |
| GB0318146D0 (en) * | 2003-08-02 | 2003-09-03 | Zetex Plc | Bipolar transistor with a low saturation voltage |
| WO2011077181A1 (en) * | 2009-12-21 | 2011-06-30 | Nxp B.V. | Semiconductor device with multilayer contact and method of manufacturing the same |
| US20150236090A1 (en) * | 2014-02-14 | 2015-08-20 | Nxp B.V. | Transistor with reducted parasitic |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3510735A (en) * | 1967-04-13 | 1970-05-05 | Scient Data Systems Inc | Transistor with integral pinch resistor |
| GB1319037A (en) * | 1971-03-26 | 1973-05-31 | Ferranti Ltd | Transistors |
| NL7312547A (nl) * | 1973-09-12 | 1975-03-14 | Philips Nv | Halfgeleiderinrichting, werkwijze ter vervaardiging daarvan en schakeling bevattende de inrichting. |
| US4066917A (en) * | 1976-05-03 | 1978-01-03 | National Semiconductor Corporation | Circuit combining bipolar transistor and JFET's to produce a constant voltage characteristic |
-
1977
- 1977-07-08 IT IT25518/77A patent/IT1084368B/it active
- 1977-11-18 FR FR7734720A patent/FR2401524A1/fr active Granted
- 1977-12-29 SE SE7714902A patent/SE425201B/sv not_active IP Right Cessation
-
1978
- 1978-01-10 GB GB859/78A patent/GB1588691A/en not_active Expired
- 1978-01-23 DE DE2802799A patent/DE2802799C2/de not_active Expired
- 1978-07-06 US US05/922,505 patent/US4205332A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| SE7714902L (sv) | 1979-02-08 |
| DE2802799A1 (de) | 1979-01-11 |
| FR2401524A1 (fr) | 1979-03-23 |
| DE2802799C2 (de) | 1984-06-14 |
| SE425201B (sv) | 1982-09-06 |
| FR2401524B1 (it) | 1983-12-09 |
| US4205332A (en) | 1980-05-27 |
| GB1588691A (en) | 1981-04-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19950729 |