DE3788500D1 - Bipolarer Halbleitertransistor. - Google Patents

Bipolarer Halbleitertransistor.

Info

Publication number
DE3788500D1
DE3788500D1 DE87309580T DE3788500T DE3788500D1 DE 3788500 D1 DE3788500 D1 DE 3788500D1 DE 87309580 T DE87309580 T DE 87309580T DE 3788500 T DE3788500 T DE 3788500T DE 3788500 D1 DE3788500 D1 DE 3788500D1
Authority
DE
Germany
Prior art keywords
semiconductor transistor
bipolar semiconductor
bipolar
transistor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87309580T
Other languages
English (en)
Other versions
DE3788500T2 (de
Inventor
Naohito Kato
Yoshiyuki Miyase
Tomoatsu Makino
Kazuhiro Yamada
Masami Yamaoka
Takeshi Matsui
Masahiro Yamamoto
Yoshiki Ishida
Tohru Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61260994A external-priority patent/JPS63114259A/ja
Priority claimed from JP61289424A external-priority patent/JPS63142674A/ja
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Publication of DE3788500D1 publication Critical patent/DE3788500D1/de
Application granted granted Critical
Publication of DE3788500T2 publication Critical patent/DE3788500T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE87309580T 1986-10-31 1987-10-29 Bipolarer Halbleitertransistor. Expired - Fee Related DE3788500T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61260994A JPS63114259A (ja) 1986-10-31 1986-10-31 バイポ−ラ型トランジスタ
JP61289424A JPS63142674A (ja) 1986-12-04 1986-12-04 バイポ−ラ型トランジスタ

Publications (2)

Publication Number Publication Date
DE3788500D1 true DE3788500D1 (de) 1994-01-27
DE3788500T2 DE3788500T2 (de) 1994-04-28

Family

ID=26544855

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87309580T Expired - Fee Related DE3788500T2 (de) 1986-10-31 1987-10-29 Bipolarer Halbleitertransistor.

Country Status (4)

Country Link
US (1) US4994880A (de)
EP (1) EP0266205B1 (de)
KR (1) KR900008150B1 (de)
DE (1) DE3788500T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0784647B2 (ja) * 1988-09-15 1995-09-13 日本電装株式会社 ニッケル膜およびそれを形成するスパッタリング方法
US5229313A (en) * 1989-09-29 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor device having multilayer structure
US5111267A (en) * 1989-09-29 1992-05-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a multilayer electrode structure and method for fabricating the same
JPH07101736B2 (ja) * 1990-06-28 1995-11-01 日本電装株式会社 半導体装置およびその製造方法
DE69223868T2 (de) * 1991-07-17 1998-09-03 Denso Corp Verfahren zur Herstellung von Elektroden eines Halbleiterbauelements
US5352924A (en) * 1993-04-14 1994-10-04 Texas Instruments Incorporated Bipolar layout for improved performance
JPH0786430A (ja) * 1993-09-14 1995-03-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5488252A (en) * 1994-08-16 1996-01-30 Telefonaktiebolaget L M Erricsson Layout for radio frequency power transistors
JP3253468B2 (ja) * 1994-12-05 2002-02-04 シャープ株式会社 半導体装置
NL1001062C2 (nl) 1995-08-25 1997-02-27 Tno Membraan en werkwijze voor het scheiden van aromatische koolwaterstoffen uit een mengsel van diverse aromatische koolwaterstoffen of uit een mengsel van dergelijke aromatische koolwaterstoffen en niet-aromatische koolwaterstoffen.
KR100471520B1 (ko) * 1996-07-03 2005-04-14 코닌클리케 필립스 일렉트로닉스 엔.브이. 반도체디바이스
JP2002203957A (ja) * 2000-12-28 2002-07-19 Rohm Co Ltd トランジスタ
IT1319755B1 (it) * 2000-12-28 2003-11-03 St Microelectronics Srl Dispositivo integrato in configurazione emitter-switching e relativoprocesso di fabbricazione

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514880B2 (de) * 1965-10-12 1972-02-17 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Transistor zur verstaerkungsregelung insbesondere planar oder mesa transistor
DE1764455C3 (de) * 1968-06-08 1980-02-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte Darlington-Transistorschaltung
US3609460A (en) * 1968-06-28 1971-09-28 Rca Corp Power transistor having ballasted emitter fingers interdigitated with base fingers
NL165888C (nl) * 1970-10-10 1981-05-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam bevattende een collectorzone, een basiszone en een emitterzone waarbij de emitterzone ten minste twee strookvormige onderling evenwijdige emittergebieden bevat, die uit afwisselend smallere en bredere delen bestaan.
US3836996A (en) * 1973-09-26 1974-09-17 Rca Corp Semiconductor darlington circuit
JPS6020905B2 (ja) * 1977-04-07 1985-05-24 ソニー株式会社 半導体装置
US4167748A (en) * 1978-07-03 1979-09-11 Bell Telephone Laboratories, Incorporated High voltage monolithic transistor circuit
JPS5559767A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Semiconductor device, method of fabricating the same and application thereof
JPS5650562A (en) * 1979-10-02 1981-05-07 Mitsubishi Electric Corp Transistor
JPS57162462A (en) * 1981-03-31 1982-10-06 Toshiba Corp Semiconductor device
JPS58145152A (ja) * 1982-02-23 1983-08-29 Mitsubishi Electric Corp ダ−リントン接続構造のトランジスタ
US4435174A (en) * 1982-04-12 1984-03-06 American Hospital Supply Corporation Catheter guide
FR2529389A1 (fr) * 1982-06-25 1983-12-30 Thomson Csf Transistor de commutation de puissance a structure digitee
JPS6022366A (ja) * 1983-07-18 1985-02-04 Mitsubishi Electric Corp ダ−リントン接続形トランジスタ
JPS60154552A (ja) * 1984-01-23 1985-08-14 Mitsubishi Electric Corp 電力用半導体装置
JPS61159762A (ja) * 1984-12-31 1986-07-19 Sanken Electric Co Ltd 半導体装置

Also Published As

Publication number Publication date
KR900008150B1 (ko) 1990-11-03
US4994880A (en) 1991-02-19
KR880008455A (ko) 1988-08-31
EP0266205A3 (en) 1990-02-07
DE3788500T2 (de) 1994-04-28
EP0266205B1 (de) 1993-12-15
EP0266205A2 (de) 1988-05-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee