DE3784974D1 - Selbstjustierter vlsi bipolarer transistor. - Google Patents
Selbstjustierter vlsi bipolarer transistor.Info
- Publication number
- DE3784974D1 DE3784974D1 DE8787305812T DE3784974T DE3784974D1 DE 3784974 D1 DE3784974 D1 DE 3784974D1 DE 8787305812 T DE8787305812 T DE 8787305812T DE 3784974 T DE3784974 T DE 3784974T DE 3784974 D1 DE3784974 D1 DE 3784974D1
- Authority
- DE
- Germany
- Prior art keywords
- self
- adjusted
- bipolar transistor
- vlsi
- vlsi bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US88599586A | 1986-07-16 | 1986-07-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3784974D1 true DE3784974D1 (de) | 1993-04-29 |
DE3784974T2 DE3784974T2 (de) | 1993-08-26 |
Family
ID=25388151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787305812T Expired - Lifetime DE3784974T2 (de) | 1986-07-16 | 1987-07-01 | Selbstjustierter vlsi bipolarer transistor. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0253538B1 (de) |
JP (1) | JPS6380567A (de) |
KR (1) | KR950014276B1 (de) |
DE (1) | DE3784974T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE68928787T2 (de) * | 1988-04-11 | 1998-12-24 | Synergy Semiconductor Corp., Santa Clara, Calif. | Verfahren zur Herstellung eines Bipolartransistors |
US6004855A (en) * | 1988-04-11 | 1999-12-21 | Synergy Semiconductor Corporation | Process for producing a high performance bipolar structure |
JP2504553B2 (ja) * | 1989-01-09 | 1996-06-05 | 株式会社東芝 | バイポ―ラトランジスタを有する半導体装置の製造方法 |
KR101731796B1 (ko) | 2015-06-26 | 2017-05-02 | 신비 | 팔 다리 복합 운동이 가능한 놀이터 적용 안전 유희 구조물 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2508704B1 (fr) * | 1981-06-26 | 1985-06-07 | Thomson Csf | Procede de fabrication de transistors bipolaires integres de tres petites dimensions |
EP0166923A3 (de) * | 1984-06-29 | 1987-09-30 | International Business Machines Corporation | Hochleistungsbipolartransistor mit einem zwischen dem Emitter und der Extrinsic-Basiszone angeordneten leicht dotierten Schutzring |
CA1252227A (en) * | 1984-07-09 | 1989-04-04 | Fairchild Camera And Instrument Corporation | Self-aligned silicide base contact for bipolar transistor |
DE3580206D1 (de) * | 1984-07-31 | 1990-11-29 | Toshiba Kawasaki Kk | Bipolarer transistor und verfahren zu seiner herstellung. |
-
1987
- 1987-07-01 EP EP87305812A patent/EP0253538B1/de not_active Expired - Lifetime
- 1987-07-01 DE DE8787305812T patent/DE3784974T2/de not_active Expired - Lifetime
- 1987-07-15 KR KR1019870007649A patent/KR950014276B1/ko not_active IP Right Cessation
- 1987-07-16 JP JP62178163A patent/JPS6380567A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR880002271A (ko) | 1988-04-30 |
EP0253538A2 (de) | 1988-01-20 |
EP0253538B1 (de) | 1993-03-24 |
KR950014276B1 (ko) | 1995-11-24 |
DE3784974T2 (de) | 1993-08-26 |
JPS6380567A (ja) | 1988-04-11 |
EP0253538A3 (en) | 1990-01-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |