DE3784974T2 - Selbstjustierter vlsi bipolarer transistor. - Google Patents

Selbstjustierter vlsi bipolarer transistor.

Info

Publication number
DE3784974T2
DE3784974T2 DE8787305812T DE3784974T DE3784974T2 DE 3784974 T2 DE3784974 T2 DE 3784974T2 DE 8787305812 T DE8787305812 T DE 8787305812T DE 3784974 T DE3784974 T DE 3784974T DE 3784974 T2 DE3784974 T2 DE 3784974T2
Authority
DE
Germany
Prior art keywords
self
adjusted
bipolar transistor
vlsi
vlsi bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787305812T
Other languages
English (en)
Other versions
DE3784974D1 (de
Inventor
Jeffrey E Brighton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE3784974D1 publication Critical patent/DE3784974D1/de
Publication of DE3784974T2 publication Critical patent/DE3784974T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE8787305812T 1986-07-16 1987-07-01 Selbstjustierter vlsi bipolarer transistor. Expired - Lifetime DE3784974T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88599586A 1986-07-16 1986-07-16

Publications (2)

Publication Number Publication Date
DE3784974D1 DE3784974D1 (de) 1993-04-29
DE3784974T2 true DE3784974T2 (de) 1993-08-26

Family

ID=25388151

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787305812T Expired - Lifetime DE3784974T2 (de) 1986-07-16 1987-07-01 Selbstjustierter vlsi bipolarer transistor.

Country Status (4)

Country Link
EP (1) EP0253538B1 (de)
JP (1) JPS6380567A (de)
KR (1) KR950014276B1 (de)
DE (1) DE3784974T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6004855A (en) * 1988-04-11 1999-12-21 Synergy Semiconductor Corporation Process for producing a high performance bipolar structure
EP0337720B1 (de) * 1988-04-11 1998-08-19 Synergy Semiconductor Corporation Verfahren zur Herstellung eines Bipolartransistors
JP2504553B2 (ja) * 1989-01-09 1996-06-05 株式会社東芝 バイポ―ラトランジスタを有する半導体装置の製造方法
KR101731796B1 (ko) 2015-06-26 2017-05-02 신비 팔 다리 복합 운동이 가능한 놀이터 적용 안전 유희 구조물

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2508704B1 (fr) * 1981-06-26 1985-06-07 Thomson Csf Procede de fabrication de transistors bipolaires integres de tres petites dimensions
EP0166923A3 (de) * 1984-06-29 1987-09-30 International Business Machines Corporation Hochleistungsbipolartransistor mit einem zwischen dem Emitter und der Extrinsic-Basiszone angeordneten leicht dotierten Schutzring
CA1252227A (en) * 1984-07-09 1989-04-04 Fairchild Camera And Instrument Corporation Self-aligned silicide base contact for bipolar transistor
DE3580206D1 (de) * 1984-07-31 1990-11-29 Toshiba Kawasaki Kk Bipolarer transistor und verfahren zu seiner herstellung.

Also Published As

Publication number Publication date
EP0253538B1 (de) 1993-03-24
EP0253538A2 (de) 1988-01-20
KR880002271A (ko) 1988-04-30
JPS6380567A (ja) 1988-04-11
DE3784974D1 (de) 1993-04-29
KR950014276B1 (ko) 1995-11-24
EP0253538A3 (en) 1990-01-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition