JPS5650562A - Transistor - Google Patents

Transistor

Info

Publication number
JPS5650562A
JPS5650562A JP12764179A JP12764179A JPS5650562A JP S5650562 A JPS5650562 A JP S5650562A JP 12764179 A JP12764179 A JP 12764179A JP 12764179 A JP12764179 A JP 12764179A JP S5650562 A JPS5650562 A JP S5650562A
Authority
JP
Japan
Prior art keywords
region
emitter
base
transistor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12764179A
Other languages
Japanese (ja)
Inventor
Ikunori Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12764179A priority Critical patent/JPS5650562A/en
Publication of JPS5650562A publication Critical patent/JPS5650562A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the secondary breakdown resistance of a main transistor in forward and reverse directions by forming protective diode elements made of transistors of base-opened on the same chip. CONSTITUTION:This transistor includes an N<-> type collector region 12, P type first base region 13a and second base region 13b formed on the surface of the region 12, N type first emitter region 14a and second emitter region 14b formed on the surface of the regions 13a, 13b, respectively, and conductor 16c for connecting the emitter regions 14a and 14b. A protective transistor includes the collector region 12, second base region 13b, and second emitter region 14b as a diode element. The protective transistor is opened at the base, and is connected between the collector and the emitter of the main transistor.
JP12764179A 1979-10-02 1979-10-02 Transistor Pending JPS5650562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12764179A JPS5650562A (en) 1979-10-02 1979-10-02 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12764179A JPS5650562A (en) 1979-10-02 1979-10-02 Transistor

Publications (1)

Publication Number Publication Date
JPS5650562A true JPS5650562A (en) 1981-05-07

Family

ID=14965111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12764179A Pending JPS5650562A (en) 1979-10-02 1979-10-02 Transistor

Country Status (1)

Country Link
JP (1) JPS5650562A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994880A (en) * 1986-10-31 1991-02-19 Nippondenso Co., Ltd. Semiconductor device constituting bipolar transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994880A (en) * 1986-10-31 1991-02-19 Nippondenso Co., Ltd. Semiconductor device constituting bipolar transistor

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