JPS5310984A - Complementary type mos integrated circuit - Google Patents

Complementary type mos integrated circuit

Info

Publication number
JPS5310984A
JPS5310984A JP8522676A JP8522676A JPS5310984A JP S5310984 A JPS5310984 A JP S5310984A JP 8522676 A JP8522676 A JP 8522676A JP 8522676 A JP8522676 A JP 8522676A JP S5310984 A JPS5310984 A JP S5310984A
Authority
JP
Japan
Prior art keywords
integrated circuit
type mos
complementary type
mos integrated
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8522676A
Other languages
Japanese (ja)
Inventor
Makoto Uehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8522676A priority Critical patent/JPS5310984A/en
Publication of JPS5310984A publication Critical patent/JPS5310984A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Abstract

PURPOSE:To sufficiently lower the bias resistance of parasitic circuits and prevent overcurrent produced when PN junctions are forward biased by providing P<+>, n<+> low resistance layers to N and P channel transistor regions respectively.
JP8522676A 1976-07-17 1976-07-17 Complementary type mos integrated circuit Pending JPS5310984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8522676A JPS5310984A (en) 1976-07-17 1976-07-17 Complementary type mos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8522676A JPS5310984A (en) 1976-07-17 1976-07-17 Complementary type mos integrated circuit

Publications (1)

Publication Number Publication Date
JPS5310984A true JPS5310984A (en) 1978-01-31

Family

ID=13852639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8522676A Pending JPS5310984A (en) 1976-07-17 1976-07-17 Complementary type mos integrated circuit

Country Status (1)

Country Link
JP (1) JPS5310984A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493981A (en) * 1978-01-09 1979-07-25 Toshiba Corp Semiconductor device
JPS5574172A (en) * 1978-11-27 1980-06-04 Mitsubishi Electric Corp Interpolation type mos transistor
JPS5575265A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Complementary type field-effect metal-insulator- semiconductor device
JPS56150849A (en) * 1980-04-23 1981-11-21 Hitachi Ltd Semiconductor integratd circuit device
JPS5984461A (en) * 1982-11-05 1984-05-16 Hitachi Ltd Semiconductor device
JPS59117153A (en) * 1982-12-10 1984-07-06 ゼネラル・エレクトリック・カンパニイ Semiconductor device and method of producing same
JPS59181048A (en) * 1983-03-31 1984-10-15 Toshiba Corp Complementary semiconductor device
JPS6024055A (en) * 1983-07-20 1985-02-06 Toshiba Corp Manufacture of complementary type semiconductor device
JPS6169166A (en) * 1985-04-05 1986-04-09 Toshiba Corp Manufacture of semiconductor device
JPS61120461A (en) * 1984-11-09 1986-06-07 エイ・ティ・アンド・ティ・コーポレーション Cmos semiconductor device and manufacture thereof
JPS61240671A (en) * 1985-04-17 1986-10-25 Sony Corp Manufacture of complementary field effect transistor
JPS61268058A (en) * 1985-05-23 1986-11-27 Casio Comput Co Ltd Manufacture of complementary type mos integrated circuit
US4637125A (en) * 1983-09-22 1987-01-20 Kabushiki Kaisha Toshiba Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor
JPS6484747A (en) * 1987-09-28 1989-03-30 Nec Corp Manufacture of semiconductor device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493981A (en) * 1978-01-09 1979-07-25 Toshiba Corp Semiconductor device
JPS5574172A (en) * 1978-11-27 1980-06-04 Mitsubishi Electric Corp Interpolation type mos transistor
JPS5575265A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Complementary type field-effect metal-insulator- semiconductor device
JPS56150849A (en) * 1980-04-23 1981-11-21 Hitachi Ltd Semiconductor integratd circuit device
JPS5984461A (en) * 1982-11-05 1984-05-16 Hitachi Ltd Semiconductor device
JPH0459782B2 (en) * 1982-11-05 1992-09-24 Hitachi Ltd
JPS59117153A (en) * 1982-12-10 1984-07-06 ゼネラル・エレクトリック・カンパニイ Semiconductor device and method of producing same
JPS59181048A (en) * 1983-03-31 1984-10-15 Toshiba Corp Complementary semiconductor device
JPH0519822B2 (en) * 1983-03-31 1993-03-17 Tokyo Shibaura Electric Co
JPS6024055A (en) * 1983-07-20 1985-02-06 Toshiba Corp Manufacture of complementary type semiconductor device
JPH0527264B2 (en) * 1983-07-20 1993-04-20 Tokyo Shibaura Electric Co
US4637125A (en) * 1983-09-22 1987-01-20 Kabushiki Kaisha Toshiba Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor
JPS61120461A (en) * 1984-11-09 1986-06-07 エイ・ティ・アンド・ティ・コーポレーション Cmos semiconductor device and manufacture thereof
JPS6169166A (en) * 1985-04-05 1986-04-09 Toshiba Corp Manufacture of semiconductor device
JPS61240671A (en) * 1985-04-17 1986-10-25 Sony Corp Manufacture of complementary field effect transistor
JPS61268058A (en) * 1985-05-23 1986-11-27 Casio Comput Co Ltd Manufacture of complementary type mos integrated circuit
JPS6484747A (en) * 1987-09-28 1989-03-30 Nec Corp Manufacture of semiconductor device

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