JPS6447064A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6447064A
JPS6447064A JP20475987A JP20475987A JPS6447064A JP S6447064 A JPS6447064 A JP S6447064A JP 20475987 A JP20475987 A JP 20475987A JP 20475987 A JP20475987 A JP 20475987A JP S6447064 A JPS6447064 A JP S6447064A
Authority
JP
Japan
Prior art keywords
semiconductor device
region
type semiconductor
bipolar
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20475987A
Other languages
Japanese (ja)
Inventor
Ryoichi Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP20475987A priority Critical patent/JPS6447064A/en
Publication of JPS6447064A publication Critical patent/JPS6447064A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enable increase of an element in area to be restrained by a method wherein a drain diffusion region of a MOS-type semiconductor device is made to serve also as a base region of a bipolar-type semiconductor device and a well region of the MOS-type semiconductor device is made to serve simultaneously as a collector region of the bipolar-type semiconductor device. CONSTITUTION:A compound semiconductor device mixedly consisting of a MOS-type semiconductor device and a bipolar-type semiconductor device is provided onto a semiconductor substrate, where a drain diffusion region 17 of the MOS-type semiconductor device is made to serve also as a base region of the bipolar-type semiconductor device and an emitter region 16 of the bipolar-type semiconductor device exists in the base region. And, a well region 11 of the MOS-type semiconductor is made to serve simultaneously as a collector region of the bipolar semiconductor device. When a Bi-CMOS inverter is constituted, the combination of an N channel MOS with a PNP bipolar is also necessary but the Bi-CMOS inverter can be easily realized through the conversion of the N-well 11, a P<+> source diffusion region 13, the N<+> emitter diffusion region 16, and the region 17 to a P well, an N<+> source diffusion region, a P<+> emitter diffusion region and the region serving as both an N-type drain diffusion region and a base diffusion region respectively.
JP20475987A 1987-08-18 1987-08-18 Semiconductor device Pending JPS6447064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20475987A JPS6447064A (en) 1987-08-18 1987-08-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20475987A JPS6447064A (en) 1987-08-18 1987-08-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6447064A true JPS6447064A (en) 1989-02-21

Family

ID=16495877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20475987A Pending JPS6447064A (en) 1987-08-18 1987-08-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6447064A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08288413A (en) * 1995-04-19 1996-11-01 Lg Semicon Co Ltd Structure of semiconductor element and its preparation
JP2000353751A (en) * 1999-04-08 2000-12-19 Denso Corp Semiconductor device and circuit device using the same, comparison circuit and transmitting circuit
KR100367394B1 (en) * 1998-10-29 2003-03-26 주식회사 하이닉스반도체 CMOS logic gate of semiconductor device and its manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08288413A (en) * 1995-04-19 1996-11-01 Lg Semicon Co Ltd Structure of semiconductor element and its preparation
KR100367394B1 (en) * 1998-10-29 2003-03-26 주식회사 하이닉스반도체 CMOS logic gate of semiconductor device and its manufacturing method
JP2000353751A (en) * 1999-04-08 2000-12-19 Denso Corp Semiconductor device and circuit device using the same, comparison circuit and transmitting circuit

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