JPS6477157A - Insulated-gate field-effect semiconductor device - Google Patents
Insulated-gate field-effect semiconductor deviceInfo
- Publication number
- JPS6477157A JPS6477157A JP62234525A JP23452587A JPS6477157A JP S6477157 A JPS6477157 A JP S6477157A JP 62234525 A JP62234525 A JP 62234525A JP 23452587 A JP23452587 A JP 23452587A JP S6477157 A JPS6477157 A JP S6477157A
- Authority
- JP
- Japan
- Prior art keywords
- source region
- type
- regions
- insulated
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To make a semiconductor region to absorb hot carriers generated while a device is in operation so as to prevent latch-up of the device by a method wherein the opposite conductivity type semiconductor region mentioned above is provided in a source region so as to be contacted with lower layer of the source region. CONSTITUTION:Plural N<+>-type semiconductor regions 30 are formed like islands in a common P<+>-type source region 3 of P channel MOSFETs 2a and 2b provided in an N-type well 7, and the regions 30 are contacted with the N-type well 7 under them. Therefore, hot electrons e generated while the MOSFETs 2a and 2b are in operation can be absorbed into the N<+>-type regions 30 as shown by arrows. In result, a local potential drop just under the source region can be prevented, so that a upright PNP parasitic bipolar transistor 13 can be prevented from being on due to a forward bias.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62234525A JP2601664B2 (en) | 1987-09-18 | 1987-09-18 | Insulated gate field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62234525A JP2601664B2 (en) | 1987-09-18 | 1987-09-18 | Insulated gate field effect semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6477157A true JPS6477157A (en) | 1989-03-23 |
JP2601664B2 JP2601664B2 (en) | 1997-04-16 |
Family
ID=16972393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62234525A Expired - Fee Related JP2601664B2 (en) | 1987-09-18 | 1987-09-18 | Insulated gate field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2601664B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7545005B2 (en) | 2003-03-27 | 2009-06-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage |
JP2009231851A (en) * | 2009-07-09 | 2009-10-08 | Mitsubishi Electric Corp | Semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60253262A (en) * | 1984-05-29 | 1985-12-13 | Nec Corp | Mos integrated circuit device |
JPS61156882A (en) * | 1984-12-28 | 1986-07-16 | Toshiba Corp | Double-diffused igfet and manufacture thereof |
JPS62200757A (en) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Mos-type semiconductor device |
-
1987
- 1987-09-18 JP JP62234525A patent/JP2601664B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60253262A (en) * | 1984-05-29 | 1985-12-13 | Nec Corp | Mos integrated circuit device |
JPS61156882A (en) * | 1984-12-28 | 1986-07-16 | Toshiba Corp | Double-diffused igfet and manufacture thereof |
JPS62200757A (en) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Mos-type semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7545005B2 (en) | 2003-03-27 | 2009-06-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage |
US7777279B2 (en) | 2003-03-27 | 2010-08-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage |
JP2009231851A (en) * | 2009-07-09 | 2009-10-08 | Mitsubishi Electric Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP2601664B2 (en) | 1997-04-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |