JPS57132353A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS57132353A
JPS57132353A JP56018747A JP1874781A JPS57132353A JP S57132353 A JPS57132353 A JP S57132353A JP 56018747 A JP56018747 A JP 56018747A JP 1874781 A JP1874781 A JP 1874781A JP S57132353 A JPS57132353 A JP S57132353A
Authority
JP
Japan
Prior art keywords
type
transistor
transistors
collector
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56018747A
Other languages
Japanese (ja)
Other versions
JPH0131304B2 (en
Inventor
Hideaki Sadamatsu
Akira Matsuzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56018747A priority Critical patent/JPS57132353A/en
Publication of JPS57132353A publication Critical patent/JPS57132353A/en
Publication of JPH0131304B2 publication Critical patent/JPH0131304B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only

Abstract

PURPOSE:To minimize area by forming the collectors of two transistors of an ECL circuit into one island and joining both emitters to a collector of a constant-current transistor. CONSTITUTION:The emitter regions of the transistors Q1, Q2, to which input voltage Vin and reference voltage VREF are each applied, and the collector region of the constant-current transistor Q3 are shaped onto a P type semiconductor subtrate 21 as an N type epitaxial layer 22. The P type base regions 24a, 24c, 24b of each transistor Q1, Q2, Q3 are formed to the layer 22, and the N type collector regions 26, 27 of the transistors Q1, Q2 and the N type emitter region 25 of the transistor Q3 are shaped severally to the P type base regions 24a, 24c, 24b. The emitters of the transistors Q1, Q2 and the collector of the transistor Q3 are connected by the N type layer 22 and an N<+> buried layer 23, and isolation regions among these electrode wiring and elements are unnecessitated.
JP56018747A 1981-02-09 1981-02-09 Semiconductor integrated circuit Granted JPS57132353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56018747A JPS57132353A (en) 1981-02-09 1981-02-09 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56018747A JPS57132353A (en) 1981-02-09 1981-02-09 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS57132353A true JPS57132353A (en) 1982-08-16
JPH0131304B2 JPH0131304B2 (en) 1989-06-26

Family

ID=11980239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56018747A Granted JPS57132353A (en) 1981-02-09 1981-02-09 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57132353A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160996A (en) * 1987-10-08 1992-11-03 Matsushita Electric Industrial Co., Inc. Structure and method of manufacture for semiconductor device
US5292671A (en) * 1987-10-08 1994-03-08 Matsushita Electric Industrial, Co., Ltd. Method of manufacture for semiconductor device by forming deep and shallow regions
JPH077082A (en) * 1992-06-29 1995-01-10 Korea Electron & Telecommun Res Inst Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434785A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434785A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Semiconductor integrated circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160996A (en) * 1987-10-08 1992-11-03 Matsushita Electric Industrial Co., Inc. Structure and method of manufacture for semiconductor device
US5292671A (en) * 1987-10-08 1994-03-08 Matsushita Electric Industrial, Co., Ltd. Method of manufacture for semiconductor device by forming deep and shallow regions
JPH077082A (en) * 1992-06-29 1995-01-10 Korea Electron & Telecommun Res Inst Semiconductor device

Also Published As

Publication number Publication date
JPH0131304B2 (en) 1989-06-26

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