JPS6463828A - Semiconductor temperature detecting circuit - Google Patents

Semiconductor temperature detecting circuit

Info

Publication number
JPS6463828A
JPS6463828A JP62220651A JP22065187A JPS6463828A JP S6463828 A JPS6463828 A JP S6463828A JP 62220651 A JP62220651 A JP 62220651A JP 22065187 A JP22065187 A JP 22065187A JP S6463828 A JPS6463828 A JP S6463828A
Authority
JP
Japan
Prior art keywords
collectors
source
terminal
guided
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62220651A
Other languages
Japanese (ja)
Other versions
JPH0569457B2 (en
Inventor
Tsutomu Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62220651A priority Critical patent/JPS6463828A/en
Publication of JPS6463828A publication Critical patent/JPS6463828A/en
Publication of JPH0569457B2 publication Critical patent/JPH0569457B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To facilitate MOS integration, by commonly connecting the collectors of a pair of bipolar transistors to a power-source-voltage supplying terminal. CONSTITUTION:The collectors and the bases of a pair of bipolar transistors 21 and 22 are commonly connected and guided to a power-source-voltage supplying terminal 23 and an output terminal 24 of an operation amplifier 20. The emitters are guided to a grounding terminal through a resistor 33 and resistors 31 and 32. The transistors 21 and 22 can have the commonly connected collectors in this way. Therefore a vertical type bipolar transistor comprising the following parts can be implemented by a standard MOS process: an N-type semiconductor substrate 34 for forming a CMOS integrated circuit as the collector; a P-well region 35 as the base; and an N<+> region 36 for forming the source and the drain of an N-channel transistor as the emitter.
JP62220651A 1987-09-02 1987-09-02 Semiconductor temperature detecting circuit Granted JPS6463828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62220651A JPS6463828A (en) 1987-09-02 1987-09-02 Semiconductor temperature detecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62220651A JPS6463828A (en) 1987-09-02 1987-09-02 Semiconductor temperature detecting circuit

Publications (2)

Publication Number Publication Date
JPS6463828A true JPS6463828A (en) 1989-03-09
JPH0569457B2 JPH0569457B2 (en) 1993-10-01

Family

ID=16754309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62220651A Granted JPS6463828A (en) 1987-09-02 1987-09-02 Semiconductor temperature detecting circuit

Country Status (1)

Country Link
JP (1) JPS6463828A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007102753A (en) * 2005-09-07 2007-04-19 Renesas Technology Corp Reference voltage generation circuit, semiconductor integrated circuit and semiconductor integrated circuit device
JP2007279949A (en) * 2006-04-05 2007-10-25 Toshiba Corp Reference voltage generation circuit
US7507023B2 (en) 2005-04-15 2009-03-24 Fuji Electric Device Technology Co., Ltd. Temperature measurement device of power semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF SOLID-&TATE CIRCUIT=1984 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7507023B2 (en) 2005-04-15 2009-03-24 Fuji Electric Device Technology Co., Ltd. Temperature measurement device of power semiconductor device
JP2007102753A (en) * 2005-09-07 2007-04-19 Renesas Technology Corp Reference voltage generation circuit, semiconductor integrated circuit and semiconductor integrated circuit device
JP2007279949A (en) * 2006-04-05 2007-10-25 Toshiba Corp Reference voltage generation circuit

Also Published As

Publication number Publication date
JPH0569457B2 (en) 1993-10-01

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