JPS6465922A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6465922A
JPS6465922A JP62222424A JP22242487A JPS6465922A JP S6465922 A JPS6465922 A JP S6465922A JP 62222424 A JP62222424 A JP 62222424A JP 22242487 A JP22242487 A JP 22242487A JP S6465922 A JPS6465922 A JP S6465922A
Authority
JP
Japan
Prior art keywords
npn
base
cmos
circuit
driven
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62222424A
Other languages
Japanese (ja)
Inventor
Kazuo Imamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62222424A priority Critical patent/JPS6465922A/en
Publication of JPS6465922A publication Critical patent/JPS6465922A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To speed up operation of the saturation prevention circuit of a bipolar transistor(TR) to be driven by a CMOS circuit by inserting a P channel MOS TR between the power source terminal of a CMOS TR circuit part and the power source terminal of a semiconductor integrated circuit, when the bipolar TR to be driven is an npn TR. CONSTITUTION:The CMOS TR circuit part is constituted of the P channel MOS TR 5 and an N channel MOS TR 6, and the output 7 of said CMOS TR circuit part and the base of the npn TR 10 are connected. Then, by adjusting the threshold voltage of the P channel TR 3 previously at the time of manufacturing, a base current is made to flow into the base of the npn TR 10 within a range that it does not come to a saturated state, extending over the whole range of the change of the base voltage of the npn TR 10. Thus, since the base current flows into the base of the npn TR 10 is limited, the change of the base voltage of the npn TR 10 is stopped before the npn TR 10 is saturated. Thus, the bipolar TR to be driven can be made to operate in a non-saturated state, and therefore, it can be made to operate at high speed.
JP62222424A 1987-09-04 1987-09-04 Semiconductor integrated circuit Pending JPS6465922A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62222424A JPS6465922A (en) 1987-09-04 1987-09-04 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62222424A JPS6465922A (en) 1987-09-04 1987-09-04 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6465922A true JPS6465922A (en) 1989-03-13

Family

ID=16782177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62222424A Pending JPS6465922A (en) 1987-09-04 1987-09-04 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6465922A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120053A (en) * 1987-11-02 1989-05-12 Hitachi Ltd Semiconductor device
US8408801B2 (en) 2009-02-25 2013-04-02 Mitsubishi Heavy Industries, Ltd. Oiling nozzle for thrust bearing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120053A (en) * 1987-11-02 1989-05-12 Hitachi Ltd Semiconductor device
US8408801B2 (en) 2009-02-25 2013-04-02 Mitsubishi Heavy Industries, Ltd. Oiling nozzle for thrust bearing

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