JPS6465922A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS6465922A JPS6465922A JP62222424A JP22242487A JPS6465922A JP S6465922 A JPS6465922 A JP S6465922A JP 62222424 A JP62222424 A JP 62222424A JP 22242487 A JP22242487 A JP 22242487A JP S6465922 A JPS6465922 A JP S6465922A
- Authority
- JP
- Japan
- Prior art keywords
- npn
- base
- cmos
- circuit
- driven
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Abstract
PURPOSE:To speed up operation of the saturation prevention circuit of a bipolar transistor(TR) to be driven by a CMOS circuit by inserting a P channel MOS TR between the power source terminal of a CMOS TR circuit part and the power source terminal of a semiconductor integrated circuit, when the bipolar TR to be driven is an npn TR. CONSTITUTION:The CMOS TR circuit part is constituted of the P channel MOS TR 5 and an N channel MOS TR 6, and the output 7 of said CMOS TR circuit part and the base of the npn TR 10 are connected. Then, by adjusting the threshold voltage of the P channel TR 3 previously at the time of manufacturing, a base current is made to flow into the base of the npn TR 10 within a range that it does not come to a saturated state, extending over the whole range of the change of the base voltage of the npn TR 10. Thus, since the base current flows into the base of the npn TR 10 is limited, the change of the base voltage of the npn TR 10 is stopped before the npn TR 10 is saturated. Thus, the bipolar TR to be driven can be made to operate in a non-saturated state, and therefore, it can be made to operate at high speed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62222424A JPS6465922A (en) | 1987-09-04 | 1987-09-04 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62222424A JPS6465922A (en) | 1987-09-04 | 1987-09-04 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6465922A true JPS6465922A (en) | 1989-03-13 |
Family
ID=16782177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62222424A Pending JPS6465922A (en) | 1987-09-04 | 1987-09-04 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6465922A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01120053A (en) * | 1987-11-02 | 1989-05-12 | Hitachi Ltd | Semiconductor device |
US8408801B2 (en) | 2009-02-25 | 2013-04-02 | Mitsubishi Heavy Industries, Ltd. | Oiling nozzle for thrust bearing |
-
1987
- 1987-09-04 JP JP62222424A patent/JPS6465922A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01120053A (en) * | 1987-11-02 | 1989-05-12 | Hitachi Ltd | Semiconductor device |
US8408801B2 (en) | 2009-02-25 | 2013-04-02 | Mitsubishi Heavy Industries, Ltd. | Oiling nozzle for thrust bearing |
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