JPS6410727A - Semiconductor differential circuit - Google Patents

Semiconductor differential circuit

Info

Publication number
JPS6410727A
JPS6410727A JP16579087A JP16579087A JPS6410727A JP S6410727 A JPS6410727 A JP S6410727A JP 16579087 A JP16579087 A JP 16579087A JP 16579087 A JP16579087 A JP 16579087A JP S6410727 A JPS6410727 A JP S6410727A
Authority
JP
Japan
Prior art keywords
input
diode
differential circuit
train
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16579087A
Other languages
Japanese (ja)
Inventor
Hiroshi Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16579087A priority Critical patent/JPS6410727A/en
Publication of JPS6410727A publication Critical patent/JPS6410727A/en
Pending legal-status Critical Current

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  • Logic Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To prevent the malfunction of an integrated circuit due to the input release of a differential circuit, without increasing power consumption and the number of gates by providing a diode train connected in series between a power source and the junction point of the emitter themselves of input transistors(TR). CONSTITUTION:The diode train D1-D3, connected in series between the power source VCC of an input circuit, the input terminal of which is the bases of the input TR Q1, Q2, and the junction point of the emitters themselves of the input TRs Q1, Q2, is provided. By a current switch using a diode a diode characteristic, the diode train is cut off at the collector voltage of the TR Q3 at the time that the input voltage is impressed, and makes it not exercise influence over the operation of the differential circuit, and besides, at the time of the input release, the collector current of the TR Q3 is supplied from the diode train. Thus, a voltage generator for bias is dispensed with, and the power consumption of the integrated circuit does not increase, and the malfunction due to the input release of the differential circuit can be prevented.
JP16579087A 1987-07-02 1987-07-02 Semiconductor differential circuit Pending JPS6410727A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16579087A JPS6410727A (en) 1987-07-02 1987-07-02 Semiconductor differential circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16579087A JPS6410727A (en) 1987-07-02 1987-07-02 Semiconductor differential circuit

Publications (1)

Publication Number Publication Date
JPS6410727A true JPS6410727A (en) 1989-01-13

Family

ID=15819043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16579087A Pending JPS6410727A (en) 1987-07-02 1987-07-02 Semiconductor differential circuit

Country Status (1)

Country Link
JP (1) JPS6410727A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254218A (en) * 1992-04-22 1993-10-19 Micron Technology, Inc. Masking layer having narrow isolated spacings and the method for forming said masking layer and the method for forming narrow isolated trenches defined by said masking layer
US5256592A (en) * 1989-10-20 1993-10-26 Oki Electric Industry Co., Ltd. Method for fabricating a semiconductor integrated circuit device
US5920206A (en) * 1996-03-28 1999-07-06 Nec Corporation Differential ECL

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026916A (en) * 1973-07-13 1975-03-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026916A (en) * 1973-07-13 1975-03-20

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256592A (en) * 1989-10-20 1993-10-26 Oki Electric Industry Co., Ltd. Method for fabricating a semiconductor integrated circuit device
US5254218A (en) * 1992-04-22 1993-10-19 Micron Technology, Inc. Masking layer having narrow isolated spacings and the method for forming said masking layer and the method for forming narrow isolated trenches defined by said masking layer
US5920206A (en) * 1996-03-28 1999-07-06 Nec Corporation Differential ECL

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