JPS5558546A - Semiconductor logic circuit device - Google Patents

Semiconductor logic circuit device

Info

Publication number
JPS5558546A
JPS5558546A JP12998978A JP12998978A JPS5558546A JP S5558546 A JPS5558546 A JP S5558546A JP 12998978 A JP12998978 A JP 12998978A JP 12998978 A JP12998978 A JP 12998978A JP S5558546 A JPS5558546 A JP S5558546A
Authority
JP
Japan
Prior art keywords
type
transistors
region
layer
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12998978A
Other languages
Japanese (ja)
Inventor
Shinji Saito
Masatoshi Sekine
Junichi Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP12998978A priority Critical patent/JPS5558546A/en
Publication of JPS5558546A publication Critical patent/JPS5558546A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To increase integration density, by using a vertical type transistor in which emitter and collector are reversed from the conventional device as a switching transistor of a current switching logic gate, and operating emitter connection wiring by a common buried layer.
CONSTITUTION: N+-type buried region 2 is formed by diffusion on P-type Si base plate 1, and epitaxial N-type layer 3 is grown on the entire surface. P+-type region 4 sandwiches region 2 and reaches base plate 1, and layer 3 is separated into islands. Next, P-type base regions 511, 51n, 52, 53 are formed by diffusion in separated layer 3. N+-type collector regions 611, 61n, 62, 63 are provided, and thereby transistors Q11, Q1n, Q2, Q3 are formed. These transistors Q11, Q1n, Q2, Q3 are used for vertical type switching. Conventional vertical type transistor is used for power supply. Consequently, each emitter of the switching transistors is connected to each collector of the power supply transistors in region 2, and thereby the degree of integration is increased.
COPYRIGHT: (C)1980,JPO&Japio
JP12998978A 1978-10-24 1978-10-24 Semiconductor logic circuit device Pending JPS5558546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12998978A JPS5558546A (en) 1978-10-24 1978-10-24 Semiconductor logic circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12998978A JPS5558546A (en) 1978-10-24 1978-10-24 Semiconductor logic circuit device

Publications (1)

Publication Number Publication Date
JPS5558546A true JPS5558546A (en) 1980-05-01

Family

ID=15023392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12998978A Pending JPS5558546A (en) 1978-10-24 1978-10-24 Semiconductor logic circuit device

Country Status (1)

Country Link
JP (1) JPS5558546A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5796545A (en) * 1980-12-08 1982-06-15 Fujitsu Ltd Manufacture of integrated circuit
JPS58223364A (en) * 1982-06-21 1983-12-24 Nec Corp Semiconductor switch element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5796545A (en) * 1980-12-08 1982-06-15 Fujitsu Ltd Manufacture of integrated circuit
JPS58223364A (en) * 1982-06-21 1983-12-24 Nec Corp Semiconductor switch element
JPH0381309B2 (en) * 1982-06-21 1991-12-27 Nippon Electric Co

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