DE69223868T2 - Verfahren zur Herstellung von Elektroden eines Halbleiterbauelements - Google Patents

Verfahren zur Herstellung von Elektroden eines Halbleiterbauelements

Info

Publication number
DE69223868T2
DE69223868T2 DE69223868T DE69223868T DE69223868T2 DE 69223868 T2 DE69223868 T2 DE 69223868T2 DE 69223868 T DE69223868 T DE 69223868T DE 69223868 T DE69223868 T DE 69223868T DE 69223868 T2 DE69223868 T2 DE 69223868T2
Authority
DE
Germany
Prior art keywords
semiconductor component
producing electrodes
electrodes
producing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223868T
Other languages
English (en)
Other versions
DE69223868D1 (de
Inventor
Ichiharu Kondo
Takao Yoneyama
Masami Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP03176870A external-priority patent/JP3127494B2/ja
Priority claimed from JP3295897A external-priority patent/JP2979792B2/ja
Application filed by Denso Corp filed Critical Denso Corp
Publication of DE69223868D1 publication Critical patent/DE69223868D1/de
Application granted granted Critical
Publication of DE69223868T2 publication Critical patent/DE69223868T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69223868T 1991-07-17 1992-07-16 Verfahren zur Herstellung von Elektroden eines Halbleiterbauelements Expired - Fee Related DE69223868T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP03176870A JP3127494B2 (ja) 1991-07-17 1991-07-17 半導体装置の電極形成方法
JP3295897A JP2979792B2 (ja) 1991-11-12 1991-11-12 半導体装置の電極形成方法

Publications (2)

Publication Number Publication Date
DE69223868D1 DE69223868D1 (de) 1998-02-12
DE69223868T2 true DE69223868T2 (de) 1998-09-03

Family

ID=26497625

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223868T Expired - Fee Related DE69223868T2 (de) 1991-07-17 1992-07-16 Verfahren zur Herstellung von Elektroden eines Halbleiterbauelements

Country Status (3)

Country Link
US (1) US5360765A (de)
EP (1) EP0523701B1 (de)
DE (1) DE69223868T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5783487A (en) * 1996-02-20 1998-07-21 Motorola, Inc. Method of coupling titanium to a semiconductor substrate and semiconductor device thereof
EP0812009A3 (de) * 1996-06-03 1998-01-07 Texas Instruments Incorporated Verbesserungen in der oder in Bezug auf die Halbleiterherstellung
US20040222083A1 (en) * 1999-09-06 2004-11-11 Su-Chen Fan Pre-treatment for salicide process
TW423052B (en) * 1999-09-06 2001-02-21 Taiwan Semiconductor Mfg Preprocess of metal silidation manufacturing process
JP2001148367A (ja) * 1999-11-22 2001-05-29 Nec Corp 半導体装置の製造方法及び半導体装置の製造装置
JP2001313305A (ja) * 2000-02-25 2001-11-09 Murata Mfg Co Ltd 電子部品素子、電子部品装置および通信機装置
US6358821B1 (en) 2000-07-19 2002-03-19 Chartered Semiconductor Manufacturing Inc. Method of copper transport prevention by a sputtered gettering layer on backside of wafer
US6689687B1 (en) * 2001-02-02 2004-02-10 Advanced Micro Devices, Inc. Two-step process for nickel deposition
WO2007049087A1 (en) * 2005-10-24 2007-05-03 Infineon Technologies Ag Semiconductor chip with amorphous crack-stop layer
JP2007194514A (ja) 2006-01-23 2007-08-02 Mitsubishi Electric Corp 半導体装置の製造方法
US7595257B2 (en) * 2006-08-22 2009-09-29 Freescale Semiconductor, Inc. Process of forming an electronic device including a barrier layer
JP5283326B2 (ja) * 2006-10-27 2013-09-04 三菱電機株式会社 半導体装置およびその製造方法
WO2010109572A1 (ja) 2009-03-23 2010-09-30 トヨタ自動車株式会社 半導体装置
IT1402530B1 (it) 2010-10-25 2013-09-13 St Microelectronics Srl Circuiti integrati con retro-metallizzazione e relativo metodo di produzione.
JP2015204301A (ja) 2014-04-10 2015-11-16 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN110034016B (zh) * 2019-03-25 2022-03-29 华中科技大学 一种半导体芯片正面铝层可焊化方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461054A (en) * 1966-03-24 1969-08-12 Bell Telephone Labor Inc Cathodic sputtering from a cathodically biased target electrode having an rf potential superimposed on the cathodic bias
US3516915A (en) * 1968-05-01 1970-06-23 Bell Telephone Labor Inc Sputtering technique
US3945903A (en) * 1974-08-28 1976-03-23 Shatterproof Glass Corporation Sputter-coating of glass sheets or other substrates
US3982908A (en) * 1975-11-20 1976-09-28 Rca Corporation Nickel-gold-cobalt contact for silicon devices
JPS56142633A (en) * 1980-04-08 1981-11-07 Mitsubishi Electric Corp Forming method for back electrode of semiconductor wafer
US4513905A (en) * 1983-07-29 1985-04-30 The Perkin-Elmer Corporation Integrated circuit metallization technique
US4588343A (en) * 1984-05-18 1986-05-13 Varian Associates, Inc. Workpiece lifting and holding apparatus
JPS6119778A (ja) * 1984-07-05 1986-01-28 Canon Inc アモルフアス半導体薄膜の製造方法
JPH084095B2 (ja) * 1985-03-26 1996-01-17 日本電気株式会社 半導体装置の製造方法
DE3788500T2 (de) * 1986-10-31 1994-04-28 Nippon Denso Co Bipolarer Halbleitertransistor.
JPS63290268A (ja) * 1987-05-20 1988-11-28 Fujitsu Ltd 薄膜の成長方法
JPH0640066B2 (ja) * 1987-07-27 1994-05-25 日本電気株式会社 密着力測定装置
JPH0648729B2 (ja) * 1988-02-24 1994-06-22 シーメンス、アクチエンゲゼルシシヤフト 電界効果制御可能のバイポーラ・トランジスタ
JPH0784647B2 (ja) * 1988-09-15 1995-09-13 日本電装株式会社 ニッケル膜およびそれを形成するスパッタリング方法
JPH02230756A (ja) * 1989-03-03 1990-09-13 Seiko Epson Corp 銅電極配線材料

Also Published As

Publication number Publication date
EP0523701B1 (de) 1998-01-07
DE69223868D1 (de) 1998-02-12
EP0523701A2 (de) 1993-01-20
EP0523701A3 (en) 1993-09-29
US5360765A (en) 1994-11-01

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee