DE69021177T2 - Halbleiteranordnung mit isolierter Gateelektrode. - Google Patents

Halbleiteranordnung mit isolierter Gateelektrode.

Info

Publication number
DE69021177T2
DE69021177T2 DE69021177T DE69021177T DE69021177T2 DE 69021177 T2 DE69021177 T2 DE 69021177T2 DE 69021177 T DE69021177 T DE 69021177T DE 69021177 T DE69021177 T DE 69021177T DE 69021177 T2 DE69021177 T2 DE 69021177T2
Authority
DE
Germany
Prior art keywords
semiconductor device
gate electrode
insulated gate
insulated
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69021177T
Other languages
English (en)
Other versions
DE69021177D1 (de
Inventor
Tadahiro Ohmi
Mamoru Miyawaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69021177D1 publication Critical patent/DE69021177D1/de
Publication of DE69021177T2 publication Critical patent/DE69021177T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69021177T 1989-12-02 1990-11-30 Halbleiteranordnung mit isolierter Gateelektrode. Expired - Fee Related DE69021177T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1314031A JP2994670B2 (ja) 1989-12-02 1989-12-02 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69021177D1 DE69021177D1 (de) 1995-08-31
DE69021177T2 true DE69021177T2 (de) 1996-01-11

Family

ID=18048383

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69021177T Expired - Fee Related DE69021177T2 (de) 1989-12-02 1990-11-30 Halbleiteranordnung mit isolierter Gateelektrode.

Country Status (4)

Country Link
US (2) US6242783B1 (de)
EP (1) EP0431855B1 (de)
JP (1) JP2994670B2 (de)
DE (1) DE69021177T2 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2948985B2 (ja) * 1992-06-12 1999-09-13 三菱電機株式会社 半導体装置
FR2720191B1 (fr) * 1994-05-18 1996-10-18 Michel Haond Transistor à effet de champ à grille isolée, et procédé de fabrication correspondant.
JP3169775B2 (ja) * 1994-08-29 2001-05-28 株式会社日立製作所 半導体回路、スイッチ及びそれを用いた通信機
JPH1127116A (ja) 1997-07-02 1999-01-29 Tadahiro Omi 半導体集積回路、電圧コントロールディレイライン、ディレイロックドループ、自己同期パイプライン式デジタルシステム、電圧制御発振器、およびフェーズロックドループ
US6448615B1 (en) * 1998-02-26 2002-09-10 Micron Technology, Inc. Methods, structures, and circuits for transistors with gate-to-body capacitive coupling
US6104066A (en) 1998-03-30 2000-08-15 Micron Technology, Inc. Circuit and method for low voltage, voltage sense amplifier
US6229342B1 (en) 1998-03-30 2001-05-08 Micron Technology, Inc. Circuits and method for body contacted and backgated transistors
US6307235B1 (en) 1998-03-30 2001-10-23 Micron Technology, Inc. Another technique for gated lateral bipolar transistors
US6097065A (en) 1998-03-30 2000-08-01 Micron Technology, Inc. Circuits and methods for dual-gated transistors
US6075272A (en) * 1998-03-30 2000-06-13 Micron Technology, Inc. Structure for gated lateral bipolar transistors
US6049496A (en) * 1998-03-30 2000-04-11 Micron Technology, Inc. Circuit and method for low voltage, current sense amplifier
US6107663A (en) * 1998-03-30 2000-08-22 Micron Technology, Inc. Circuit and method for gate-body structures in CMOS technology
US6218701B1 (en) * 1999-04-30 2001-04-17 Intersil Corporation Power MOS device with increased channel width and process for forming same
US6483156B1 (en) * 2000-03-16 2002-11-19 International Business Machines Corporation Double planar gated SOI MOSFET structure
US20020011612A1 (en) * 2000-07-31 2002-01-31 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US6960806B2 (en) * 2001-06-21 2005-11-01 International Business Machines Corporation Double gated vertical transistor with different first and second gate materials
US6800905B2 (en) * 2001-12-14 2004-10-05 International Business Machines Corporation Implanted asymmetric doped polysilicon gate FinFET
US20040036131A1 (en) * 2002-08-23 2004-02-26 Micron Technology, Inc. Electrostatic discharge protection devices having transistors with textured surfaces
WO2004021445A1 (ja) * 2002-08-28 2004-03-11 National Institute Of Advanced Industrial Science And Technology 二重ゲート型ｍｏｓ電界効果トランジスタ及びその作製方法
JP2004214413A (ja) 2002-12-27 2004-07-29 Toshiba Corp 半導体装置
KR100471189B1 (ko) * 2003-02-19 2005-03-10 삼성전자주식회사 수직채널을 갖는 전계효과 트랜지스터 및 그 제조방법
JP4108537B2 (ja) * 2003-05-28 2008-06-25 富士雄 舛岡 半導体装置
JP2005086024A (ja) * 2003-09-09 2005-03-31 Toshiba Corp 半導体装置及びその製造方法
US6855588B1 (en) * 2003-10-07 2005-02-15 United Microelectronics Corp. Method of fabricating a double gate MOSFET device
KR100577562B1 (ko) 2004-02-05 2006-05-08 삼성전자주식회사 핀 트랜지스터 형성방법 및 그에 따른 구조
US7122412B2 (en) * 2004-04-30 2006-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a necked FINFET device
US20050263801A1 (en) * 2004-05-27 2005-12-01 Jae-Hyun Park Phase-change memory device having a barrier layer and manufacturing method
JP2006013303A (ja) * 2004-06-29 2006-01-12 Toshiba Corp 半導体装置及びその製造方法
JP5110776B2 (ja) * 2004-07-01 2012-12-26 セイコーインスツル株式会社 半導体装置の製造方法
CN100570890C (zh) * 2004-07-01 2009-12-16 精工电子有限公司 使用沟槽结构的横向半导体器件及其制造方法
KR100585178B1 (ko) * 2005-02-05 2006-05-30 삼성전자주식회사 금속 게이트 전극을 가지는 ＦｉｎＦＥＴ을 포함하는반도체 소자 및 그 제조방법
KR100680958B1 (ko) * 2005-02-23 2007-02-09 주식회사 하이닉스반도체 피모스 트랜지스터의 제조방법
CN100428414C (zh) * 2005-04-15 2008-10-22 中芯国际集成电路制造(上海)有限公司 形成低应力多层金属化结构和无铅焊料端电极的方法
US7053490B1 (en) 2005-07-27 2006-05-30 Semiconductor Manufacturing International (Shanghai) Corporation Planar bond pad design and method of making the same
KR100669353B1 (ko) * 2005-10-14 2007-01-16 삼성전자주식회사 비휘발성 기억소자 및 그 형성방법
JP5172264B2 (ja) * 2007-10-01 2013-03-27 株式会社東芝 半導体装置
JP5553276B2 (ja) * 2013-02-26 2014-07-16 国立大学法人東北大学 相補型ｍｉｓ装置の製造方法
EP2889906B1 (de) 2013-12-30 2019-02-20 IMEC vzw Verbesserungen an oder im Zusammenhang mit elektrostatischem Entladungsschutz

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JPS54136275A (en) 1978-04-14 1979-10-23 Agency Of Ind Science & Technol Field effect transistor of isolation gate
US4393391A (en) * 1980-06-16 1983-07-12 Supertex, Inc. Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area
FR2526586B1 (fr) * 1982-05-04 1985-11-08 Efcis Transistor a effet de champ a grille profonde et procede de fabrication
JPH077826B2 (ja) * 1983-08-25 1995-01-30 忠弘 大見 半導体集積回路
EP0203146B1 (de) * 1984-11-27 1989-05-24 AT&T Corp. Transistor mit tiefem graben
JP2582794B2 (ja) * 1987-08-10 1997-02-19 株式会社東芝 半導体装置及びその製造方法
SE461490B (sv) * 1987-08-24 1990-02-19 Asea Ab Mos-transistor utbildad paa ett isolerande underlag
JP2579954B2 (ja) 1987-09-25 1997-02-12 株式会社東芝 Ｍｏｓトランジスタ
JPH0214578A (ja) 1988-07-01 1990-01-18 Fujitsu Ltd 半導体装置
US5115289A (en) * 1988-11-21 1992-05-19 Hitachi, Ltd. Semiconductor device and semiconductor memory device
US5331197A (en) * 1991-04-23 1994-07-19 Canon Kabushiki Kaisha Semiconductor memory device including gate electrode sandwiching a channel region

Also Published As

Publication number Publication date
US6316813B1 (en) 2001-11-13
EP0431855B1 (de) 1995-07-26
US6242783B1 (en) 2001-06-05
EP0431855A1 (de) 1991-06-12
JP2994670B2 (ja) 1999-12-27
JPH03245573A (ja) 1991-11-01
DE69021177D1 (de) 1995-08-31

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8339 Ceased/non-payment of the annual fee