DE3689782D1 - Anordnung mit isoliertem Gate. - Google Patents

Anordnung mit isoliertem Gate.

Info

Publication number
DE3689782D1
DE3689782D1 DE3689782T DE3689782T DE3689782D1 DE 3689782 D1 DE3689782 D1 DE 3689782D1 DE 3689782 T DE3689782 T DE 3689782T DE 3689782 T DE3689782 T DE 3689782T DE 3689782 D1 DE3689782 D1 DE 3689782D1
Authority
DE
Germany
Prior art keywords
insulated gate
gate arrangement
arrangement
insulated
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3689782T
Other languages
English (en)
Other versions
DE3689782T2 (de
Inventor
Hamza Yilmaz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25122544&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3689782(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of DE3689782D1 publication Critical patent/DE3689782D1/de
Publication of DE3689782T2 publication Critical patent/DE3689782T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE3689782T 1985-09-30 1986-09-23 Anordnung mit isoliertem Gate. Expired - Lifetime DE3689782T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/781,381 US4809045A (en) 1985-09-30 1985-09-30 Insulated gate device

Publications (2)

Publication Number Publication Date
DE3689782D1 true DE3689782D1 (de) 1994-05-19
DE3689782T2 DE3689782T2 (de) 1994-11-03

Family

ID=25122544

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3689782T Expired - Lifetime DE3689782T2 (de) 1985-09-30 1986-09-23 Anordnung mit isoliertem Gate.

Country Status (4)

Country Link
US (1) US4809045A (de)
EP (1) EP0217266B1 (de)
JP (1) JPH06101565B2 (de)
DE (1) DE3689782T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4641162A (en) * 1985-12-11 1987-02-03 General Electric Company Current limited insulated gate device
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
JPH07120794B2 (ja) * 1986-07-09 1995-12-20 株式会社東芝 Ｍｏｓ型半導体装置
JP2722415B2 (ja) * 1987-06-05 1998-03-04 富士電機株式会社 半導体素子の製造方法
US5285094A (en) * 1987-08-24 1994-02-08 Hitachi, Ltd. Vertical insulated gate semiconductor device with less influence from the parasitic bipolar effect
JPH0766968B2 (ja) * 1987-08-24 1995-07-19 株式会社日立製作所 半導体装置及びその製造方法
JPH07105496B2 (ja) * 1989-04-28 1995-11-13 三菱電機株式会社 絶縁ゲート型バイポーラトランジスタ
JPH03155677A (ja) * 1989-08-19 1991-07-03 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JPH0396282A (ja) * 1989-09-08 1991-04-22 Fuji Electric Co Ltd 絶縁ゲート型半導体装置
JPH03194974A (ja) * 1989-12-22 1991-08-26 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
US5296725A (en) * 1992-06-10 1994-03-22 North Carolina State University At Raleigh Integrated multicelled semiconductor switching device for high current applications
JP3297129B2 (ja) * 1992-10-08 2002-07-02 株式会社東芝 半導体装置
US5396097A (en) * 1993-11-22 1995-03-07 Motorola Inc Transistor with common base region
EP0661755A1 (de) * 1993-12-28 1995-07-05 AT&T Corp. Hochspannung-Halbleiteranordnung mit verbesserter elektrischer Robustheit und verminderter Zellschrittweite
JPH10132871A (ja) * 1996-10-29 1998-05-22 Toshiba Corp 半導体装置
JP3692684B2 (ja) 1997-02-17 2005-09-07 株式会社デンソー 絶縁ゲート型電界効果トランジスタ及びその製造方法
KR100256109B1 (ko) * 1997-05-07 2000-05-01 김덕중 전력 반도체 장치
GB2373634B (en) 2000-10-31 2004-12-08 Fuji Electric Co Ltd Semiconductor device
JP4082295B2 (ja) * 2003-07-11 2008-04-30 トヨタ自動車株式会社 半導体装置
TWI315765B (en) * 2007-05-16 2009-10-11 Avision Inc Separable shaft coupler and transmission device using the same
JP5150675B2 (ja) * 2010-03-25 2013-02-20 株式会社東芝 半導体装置
CN104106139A (zh) * 2012-06-01 2014-10-15 富士电机株式会社 半导体装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
FR2460542A1 (fr) * 1979-06-29 1981-01-23 Thomson Csf Transistor a effet de champ vertical de puissance pour hautes frequences et procede de realisation d'un tel transistor
JPS5688363A (en) * 1979-12-20 1981-07-17 Nec Corp Field effect transistor
US4345265A (en) * 1980-04-14 1982-08-17 Supertex, Inc. MOS Power transistor with improved high-voltage capability
SE8107136L (sv) * 1980-12-02 1982-06-03 Gen Electric Styrelektrodforsedd likriktaranordning
US4402003A (en) * 1981-01-12 1983-08-30 Supertex, Inc. Composite MOS/bipolar power device
FR2507820A1 (fr) * 1981-06-16 1982-12-17 Thomson Csf Transistor bipolaire a commande par effet de champ au moyen d'une grille isolee
JPS586170A (ja) * 1981-07-02 1983-01-13 Nec Corp 電界効果トランジスタ
JPS5889864A (ja) * 1981-11-24 1983-05-28 Hitachi Ltd 絶縁ゲ−ト型半導体装置
US4443931A (en) * 1982-06-28 1984-04-24 General Electric Company Method of fabricating a semiconductor device with a base region having a deep portion
US4417385A (en) * 1982-08-09 1983-11-29 General Electric Company Processes for manufacturing insulated-gate semiconductor devices with integral shorts
JPS59231860A (ja) * 1983-06-14 1984-12-26 Toshiba Corp 二重拡散形絶縁ゲ−ト電界効果トランジスタ
JPS6029231A (ja) * 1983-06-24 1985-02-14 Inoue Japax Res Inc ワイヤカット放電加工方法
US4587713A (en) * 1984-02-22 1986-05-13 Rca Corporation Method for making vertical MOSFET with reduced bipolar effects
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JP2585505B2 (ja) * 1984-09-29 1997-02-26 株式会社東芝 導電変調型ｍｏｓｆｅｔ
US4641162A (en) * 1985-12-11 1987-02-03 General Electric Company Current limited insulated gate device

Also Published As

Publication number Publication date
EP0217266A2 (de) 1987-04-08
JPS62113477A (ja) 1987-05-25
JPH06101565B2 (ja) 1994-12-12
EP0217266B1 (de) 1994-04-13
EP0217266A3 (en) 1989-04-05
DE3689782T2 (de) 1994-11-03
US4809045A (en) 1989-02-28

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Legal Events

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8364 No opposition during term of opposition