DE3688809T2 - MISFET-Halbleiteranordnung mit verminderten Leckstrom. - Google Patents

MISFET-Halbleiteranordnung mit verminderten Leckstrom.

Info

Publication number
DE3688809T2
DE3688809T2 DE86107628T DE3688809T DE3688809T2 DE 3688809 T2 DE3688809 T2 DE 3688809T2 DE 86107628 T DE86107628 T DE 86107628T DE 3688809 T DE3688809 T DE 3688809T DE 3688809 T2 DE3688809 T2 DE 3688809T2
Authority
DE
Germany
Prior art keywords
semiconductor device
leakage current
reduced leakage
misfet semiconductor
misfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE86107628T
Other languages
English (en)
Other versions
DE3688809D1 (de
Inventor
Akio Fujitsu Ltd Pat Dep Nezu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3688809D1 publication Critical patent/DE3688809D1/de
Application granted granted Critical
Publication of DE3688809T2 publication Critical patent/DE3688809T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
DE86107628T 1985-06-07 1986-06-05 MISFET-Halbleiteranordnung mit verminderten Leckstrom. Expired - Fee Related DE3688809T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60123646A JPS61281554A (ja) 1985-06-07 1985-06-07 Ｍｉｓ型半導体装置

Publications (2)

Publication Number Publication Date
DE3688809D1 DE3688809D1 (de) 1993-09-09
DE3688809T2 true DE3688809T2 (de) 1993-11-18

Family

ID=14865746

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86107628T Expired - Fee Related DE3688809T2 (de) 1985-06-07 1986-06-05 MISFET-Halbleiteranordnung mit verminderten Leckstrom.

Country Status (5)

Country Link
US (1) US4785343A (de)
EP (1) EP0204336B1 (de)
JP (1) JPS61281554A (de)
KR (1) KR900000062B1 (de)
DE (1) DE3688809T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02114533A (ja) * 1988-10-24 1990-04-26 Nec Corp 半導体装置
US5200637A (en) * 1988-12-15 1993-04-06 Kabushiki Kaisha Toshiba MOS transistor and differential amplifier circuit with low offset
JPH02136340U (de) * 1989-04-18 1990-11-14
JPH04239761A (ja) * 1991-01-23 1992-08-27 Oki Electric Ind Co Ltd 半導体装置
JP3189327B2 (ja) * 1991-10-08 2001-07-16 ソニー株式会社 電荷検出装置
GB9201004D0 (en) * 1992-01-17 1992-03-11 Philips Electronic Associated A semiconductor device comprising an insulated gate field effect device
JP2713258B2 (ja) * 1995-07-25 1998-02-16 日本電気株式会社 半導体装置およびその検査方法
US5998850A (en) * 1998-02-24 1999-12-07 Sun Microsystems, Inc. Tunable field plate
JP3472476B2 (ja) * 1998-04-17 2003-12-02 松下電器産業株式会社 半導体装置及びその駆動方法
US10553687B2 (en) 2013-10-11 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having conductive feature overlapping an edge of an active region

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5055275A (de) * 1973-09-12 1975-05-15
JPS5285484A (en) * 1976-01-09 1977-07-15 Hitachi Ltd Mis type semiconductor device
JPS53132276A (en) * 1977-04-22 1978-11-17 Nec Corp Insulation gate type field effect semiconductor device
FR2420209A1 (fr) * 1978-03-14 1979-10-12 Thomson Csf Structure de circuit integre fonctionnant a haute tension
JPS55130170A (en) * 1979-03-30 1980-10-08 Hitachi Ltd Semiconductor device and method of fabricating the same
JPS57154875A (en) * 1981-03-20 1982-09-24 Hitachi Ltd Mos semiconductor device
JPS6092667A (ja) * 1983-10-27 1985-05-24 Fujitsu Ltd Ｍｉｓ型トランジスタ

Also Published As

Publication number Publication date
EP0204336A3 (en) 1988-04-20
JPS61281554A (ja) 1986-12-11
EP0204336B1 (de) 1993-08-04
US4785343A (en) 1988-11-15
KR900000062B1 (ko) 1990-01-19
KR870000764A (ko) 1987-02-20
EP0204336A2 (de) 1986-12-10
DE3688809D1 (de) 1993-09-09

Similar Documents

Publication Publication Date Title
DE3650012T2 (de) Halbleitervorrichtung.
NL189326C (nl) Halfgeleiderinrichting.
DE3684557D1 (de) Waferintegrierte halbleiteranordnung.
DE3681799D1 (de) Halbleiter-bearbeitungseinrichtung.
DE3683316D1 (de) Halbleiteranordnung.
DE3671570D1 (de) Soi-typ-halbleiteranordnung.
DE3787517D1 (de) Halbleiteranordnung mit konstantem Strom.
DE3684509D1 (de) Halbleiterspeichergeraet.
DE3681082D1 (de) Halbleiterspeichervorrichtung.
DE3685361D1 (de) Halbleiterspeichervorrichtung.
DE3687952D1 (de) Halbleiterbauelement mit ueberhitzungsschutzmittel.
DE3688518T2 (de) Halbleiteranordnungen mit Leitfähigkeitsmodulation.
DE69021177T2 (de) Halbleiteranordnung mit isolierter Gateelektrode.
DE3679108D1 (de) Halbleiteranordnungen.
DE3688064T2 (de) Halbleitervorrichtung.
DE3689031D1 (de) Integrierte Halbleiterschaltung mit Prüfschaltung.
DE3667879D1 (de) Halbleiteranordnung.
DE3682421D1 (de) Feldeffekt-halbleiteranordnung.
DE3680774D1 (de) Integriertes halbleiterbauelement.
DE3684184D1 (de) Verkapselte halbleiteranordnung.
DE3680265D1 (de) Halbleiterschaltungsanordnung.
DE3687025D1 (de) Halbleiterschalter.
DE3686490D1 (de) Halbleiterstruktur.
DE3688809T2 (de) MISFET-Halbleiteranordnung mit verminderten Leckstrom.
NL193883B (nl) Geïntegreerde halfgeleiderinrichting.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee