DE69315239T2 - VDMOS-Transistor mit verbesserter Durchbruchsspannungscharakteristik - Google Patents

VDMOS-Transistor mit verbesserter Durchbruchsspannungscharakteristik

Info

Publication number
DE69315239T2
DE69315239T2 DE69315239T DE69315239T DE69315239T2 DE 69315239 T2 DE69315239 T2 DE 69315239T2 DE 69315239 T DE69315239 T DE 69315239T DE 69315239 T DE69315239 T DE 69315239T DE 69315239 T2 DE69315239 T2 DE 69315239T2
Authority
DE
Germany
Prior art keywords
breakdown voltage
voltage characteristics
improved breakdown
vdmos transistor
vdmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69315239T
Other languages
English (en)
Other versions
DE69315239D1 (de
Inventor
Claudio Contiero
Maria Paola Galbiati
Lucia Zullino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, SGS Thomson Microelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69315239D1 publication Critical patent/DE69315239D1/de
Application granted granted Critical
Publication of DE69315239T2 publication Critical patent/DE69315239T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs
DE69315239T 1992-02-18 1993-02-11 VDMOS-Transistor mit verbesserter Durchbruchsspannungscharakteristik Expired - Fee Related DE69315239T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI920344A IT1254799B (it) 1992-02-18 1992-02-18 Transistore vdmos con migliorate caratteristiche di tenuta di tensione.

Publications (2)

Publication Number Publication Date
DE69315239D1 DE69315239D1 (de) 1998-01-02
DE69315239T2 true DE69315239T2 (de) 1998-03-19

Family

ID=11362019

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69315239T Expired - Fee Related DE69315239T2 (de) 1992-02-18 1993-02-11 VDMOS-Transistor mit verbesserter Durchbruchsspannungscharakteristik

Country Status (5)

Country Link
US (2) US5430316A (de)
EP (1) EP0557253B1 (de)
JP (1) JPH0613622A (de)
DE (1) DE69315239T2 (de)
IT (1) IT1254799B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10243743B4 (de) * 2002-09-20 2010-04-08 Infineon Technologies Ag Quasivertikales Halbleiterbauelement

Families Citing this family (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1254799B (it) * 1992-02-18 1995-10-11 St Microelectronics Srl Transistore vdmos con migliorate caratteristiche di tenuta di tensione.
DE4336054A1 (de) * 1993-10-22 1995-04-27 Bosch Gmbh Robert Monolithisch integriertes p-Kanal-Hochspannungs-Bauelement
US5349223A (en) * 1993-12-14 1994-09-20 Xerox Corporation High current high voltage vertical PMOS in ultra high voltage CMOS
EP0702411B1 (de) * 1994-09-16 2002-11-27 Kabushiki Kaisha Toshiba Halbleiteranordnung mit hoher Durchbruchspannung und mit einer vergrabenen MOS-Gatestruktur
JPH08139319A (ja) * 1994-11-11 1996-05-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5736766A (en) * 1994-12-12 1998-04-07 Texas Instruments Incorporated Medium voltage LDMOS device and method of fabrication
US5674766A (en) * 1994-12-30 1997-10-07 Siliconix Incorporated Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
DE69505348T2 (de) * 1995-02-21 1999-03-11 St Microelectronics Srl Hochspannungs-MOSFET mit Feldplatten-Elektrode und Verfahren zur Herstellung
JP3412332B2 (ja) * 1995-04-26 2003-06-03 株式会社デンソー 半導体装置
US5689129A (en) * 1995-06-07 1997-11-18 Harris Corporation High efficiency power MOS switch
US5777362A (en) * 1995-06-07 1998-07-07 Harris Corporation High efficiency quasi-vertical DMOS in CMOS or BICMOS process
US5684305A (en) * 1995-06-07 1997-11-04 Harris Corporation Pilot transistor for quasi-vertical DMOS device
US5940721A (en) * 1995-10-11 1999-08-17 International Rectifier Corporation Termination structure for semiconductor devices and process for manufacture thereof
TW344130B (en) 1995-10-11 1998-11-01 Int Rectifier Corp Termination structure for semiconductor device and process for its manufacture
US5973368A (en) 1996-06-05 1999-10-26 Pearce; Lawrence G. Monolithic class D amplifier
US6507070B1 (en) * 1996-11-25 2003-01-14 Semiconductor Components Industries Llc Semiconductor device and method of making
US5854099A (en) * 1997-06-06 1998-12-29 National Semiconductor Corporation DMOS process module applicable to an E2 CMOS core process
US6160290A (en) * 1997-11-25 2000-12-12 Texas Instruments Incorporated Reduced surface field device having an extended field plate and method for forming the same
EP0936674B1 (de) * 1998-02-10 2006-04-26 STMicroelectronics S.r.l. Integrierte Schaltung mit einem VDMOS-Transistor, der gegen Überspannungen zwischen Source und Gate geschützt ist
US6048759A (en) * 1998-02-11 2000-04-11 Magepower Semiconductor Corporation Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown
US6150200A (en) * 1998-04-03 2000-11-21 Motorola, Inc. Semiconductor device and method of making
US5918137A (en) * 1998-04-27 1999-06-29 Spectrian, Inc. MOS transistor with shield coplanar with gate electrode
US6096606A (en) * 1998-05-04 2000-08-01 Motorola, Inc. Method of making a semiconductor device
US6022790A (en) * 1998-08-05 2000-02-08 International Rectifier Corporation Semiconductor process integration of a guard ring structure
GB9818182D0 (en) * 1998-08-21 1998-10-14 Zetex Plc Gated semiconductor device
US6677626B1 (en) * 1998-11-11 2004-01-13 Fuji Electric Co., Ltd. Semiconductor device with alternating conductivity type layer and method of manufacturing the same
DE19902749C2 (de) * 1999-01-25 2002-02-07 Infineon Technologies Ag Leistungstransistoranordnung mit hoher Spannungsfestigkeit
US6084277A (en) * 1999-02-18 2000-07-04 Power Integrations, Inc. Lateral power MOSFET with improved gate design
KR100750275B1 (ko) * 1999-03-01 2007-08-20 제네럴 세미컨덕터, 인코포레이티드 상부 표면상에 위치한 드레인 접촉으로의 저 저항 경로를 갖는 트렌치 ｄｍｏｓ 트랜지스터 구조, 및 이러한 트랜지스터 구조의 형성 방법
US6242313B1 (en) 1999-09-03 2001-06-05 Taiwan Semiconductor Manufacturing Company Use of polysilicon field plates to improve high voltage bipolar device breakdown voltage
KR100630773B1 (ko) * 1999-11-09 2006-10-02 페어차일드코리아반도체 주식회사 낮은 온-저항을 갖는 수평형 디모스 트랜지스터 및 그제조방법
US6812526B2 (en) * 2000-03-01 2004-11-02 General Semiconductor, Inc. Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface
JP4231612B2 (ja) * 2000-04-26 2009-03-04 株式会社ルネサステクノロジ 半導体集積回路
SE518797C2 (sv) * 2000-07-19 2002-11-19 Ericsson Telefon Ab L M Effekt-LDMOS-transistor innefattande ett flertal parallellkopplade transistorsegment med olika tröskelspänningar
CN1233041C (zh) * 2000-09-21 2005-12-21 剑桥半导体有限公司 半导体器件及其制作方法
DE10053428A1 (de) * 2000-10-27 2002-05-16 Infineon Technologies Ag Verfahren zur Herstellung eines DMOS-Transistors
KR100393200B1 (ko) * 2001-02-20 2003-07-31 페어차일드코리아반도체 주식회사 정전기적 방전으로부터의 보호를 위한 필드 트랜지스터 및그 제조방법
US6707115B2 (en) 2001-04-16 2004-03-16 Airip Corporation Transistor with minimal hot electron injection
US6552392B2 (en) * 2001-07-03 2003-04-22 Intersil Americas Inc. MOS integrated circuit with reduced ON resistance
US6657255B2 (en) * 2001-10-30 2003-12-02 General Semiconductor, Inc. Trench DMOS device with improved drain contact
KR100432887B1 (ko) * 2002-03-05 2004-05-22 삼성전자주식회사 다중격리구조를 갖는 반도체 소자 및 그 제조방법
TW536802B (en) * 2002-04-22 2003-06-11 United Microelectronics Corp Structure and fabrication method of electrostatic discharge protection circuit
US6825510B2 (en) * 2002-09-19 2004-11-30 Fairchild Semiconductor Corporation Termination structure incorporating insulator in a trench
EP1408552A1 (de) * 2002-10-09 2004-04-14 STMicroelectronics S.r.l. Integriertes MOS-Halbleiterbauelement mit grosser Leistungsfähigkeit und Verfahren zu seiner Herstellung
DE10255116B4 (de) * 2002-11-26 2015-04-02 Infineon Technologies Ag LDMOS-Transistor und Verfahren zu dessen Herstellung
JP4437388B2 (ja) * 2003-02-06 2010-03-24 株式会社リコー 半導体装置
US20040201078A1 (en) * 2003-04-11 2004-10-14 Liping Ren Field plate structure for high voltage devices
KR20050069152A (ko) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 횡형 디모스 트랜지스터 소자
EP1577952B1 (de) * 2004-03-09 2018-07-04 STMicroelectronics Srl Verfahren zur Herstellung eines Hochspannungsfeldeffekttransistors mit isoliertem Gate
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7679160B2 (en) * 2004-09-03 2010-03-16 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
DE102005047169B4 (de) * 2005-09-30 2015-08-20 Infineon Technologies Ag Lateraler DMOS-Transistor mit Trench-Drainzone
US7768075B2 (en) * 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
DE102007012380A1 (de) * 2007-03-14 2008-09-18 Austriamicrosystems Ag MOSFET mit Kanalanschluss und Verfahren zur Herstellung eines MOSFETs mit Kanalanschluss
US7968950B2 (en) * 2007-06-27 2011-06-28 Texas Instruments Incorporated Semiconductor device having improved gate electrode placement and decreased area design
US8389366B2 (en) 2008-05-30 2013-03-05 Freescale Semiconductor, Inc. Resurf semiconductor device charge balancing
US8097930B2 (en) * 2008-08-08 2012-01-17 Infineon Technologies Ag Semiconductor devices with trench isolations
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8227855B2 (en) 2009-02-09 2012-07-24 Fairchild Semiconductor Corporation Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
US8148749B2 (en) 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US8643090B2 (en) * 2009-03-23 2014-02-04 Infineon Technologies Ag Semiconductor devices and methods for manufacturing a semiconductor device
US8049276B2 (en) 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
US8115253B2 (en) * 2009-09-10 2012-02-14 United Microelectronics Corp. Ultra high voltage MOS transistor device
JP5449942B2 (ja) 2009-09-24 2014-03-19 セイコーインスツル株式会社 半導体装置およびその製造方法
JP2011124464A (ja) * 2009-12-14 2011-06-23 Toshiba Corp 半導体装置及びその製造方法
CN102130167B (zh) * 2010-01-20 2012-11-07 上海华虹Nec电子有限公司 Dddmos器件及其制造方法
DE102010014370B4 (de) * 2010-04-09 2021-12-02 X-Fab Semiconductor Foundries Ag LDMOS-Transistor und LDMOS - Bauteil
CN101901804B (zh) * 2010-05-10 2013-03-20 深圳深爱半导体股份有限公司 Vdmos器件及其制作方法
US8487371B2 (en) 2011-03-29 2013-07-16 Fairchild Semiconductor Corporation Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same
US8643101B2 (en) 2011-04-20 2014-02-04 United Microelectronics Corp. High voltage metal oxide semiconductor device having a multi-segment isolation structure
US8581338B2 (en) 2011-05-12 2013-11-12 United Microelectronics Corp. Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof
US8501603B2 (en) 2011-06-15 2013-08-06 United Microelectronics Corp. Method for fabricating high voltage transistor
US8592905B2 (en) 2011-06-26 2013-11-26 United Microelectronics Corp. High-voltage semiconductor device
US20130043513A1 (en) 2011-08-19 2013-02-21 United Microelectronics Corporation Shallow trench isolation structure and fabricating method thereof
US8729599B2 (en) 2011-08-22 2014-05-20 United Microelectronics Corp. Semiconductor device
US8921937B2 (en) 2011-08-24 2014-12-30 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device and method of fabricating the same
US8742498B2 (en) 2011-11-03 2014-06-03 United Microelectronics Corp. High voltage semiconductor device and fabricating method thereof
US8482063B2 (en) 2011-11-18 2013-07-09 United Microelectronics Corporation High voltage semiconductor device
US8587058B2 (en) 2012-01-02 2013-11-19 United Microelectronics Corp. Lateral diffused metal-oxide-semiconductor device
US8492835B1 (en) 2012-01-20 2013-07-23 United Microelectronics Corporation High voltage MOSFET device
US9093296B2 (en) 2012-02-09 2015-07-28 United Microelectronics Corp. LDMOS transistor having trench structures extending to a buried layer
TWI523196B (zh) 2012-02-24 2016-02-21 聯華電子股份有限公司 高壓金氧半導體電晶體元件及其佈局圖案
US8890144B2 (en) 2012-03-08 2014-11-18 United Microelectronics Corp. High voltage semiconductor device
US9236471B2 (en) 2012-04-24 2016-01-12 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9159791B2 (en) 2012-06-06 2015-10-13 United Microelectronics Corp. Semiconductor device comprising a conductive region
US8836067B2 (en) 2012-06-18 2014-09-16 United Microelectronics Corp. Transistor device and manufacturing method thereof
US8674441B2 (en) 2012-07-09 2014-03-18 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8643104B1 (en) 2012-08-14 2014-02-04 United Microelectronics Corp. Lateral diffusion metal oxide semiconductor transistor structure
US8729631B2 (en) 2012-08-28 2014-05-20 United Microelectronics Corp. MOS transistor
US9196717B2 (en) 2012-09-28 2015-11-24 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8829611B2 (en) 2012-09-28 2014-09-09 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8704304B1 (en) 2012-10-05 2014-04-22 United Microelectronics Corp. Semiconductor structure
US20140110777A1 (en) 2012-10-18 2014-04-24 United Microelectronics Corp. Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof
JP6700648B2 (ja) 2012-10-18 2020-05-27 富士電機株式会社 半導体装置の製造方法
US9224857B2 (en) 2012-11-12 2015-12-29 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9035425B2 (en) 2013-05-02 2015-05-19 United Microelectronics Corp. Semiconductor integrated circuit
US8896057B1 (en) 2013-05-14 2014-11-25 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US8786362B1 (en) 2013-06-04 2014-07-22 United Microelectronics Corporation Schottky diode having current leakage protection structure and current leakage protecting method of the same
US8941175B2 (en) 2013-06-17 2015-01-27 United Microelectronics Corp. Power array with staggered arrangement for improving on-resistance and safe operating area
US9136375B2 (en) 2013-11-21 2015-09-15 United Microelectronics Corp. Semiconductor structure
US9490360B2 (en) 2014-02-19 2016-11-08 United Microelectronics Corp. Semiconductor device and operating method thereof
CN105632931B (zh) 2014-11-04 2020-04-28 台湾积体电路制造股份有限公司 半导体器件的制造方法及半导体器件
EP3151283A1 (de) * 2015-09-29 2017-04-05 Nexperia B.V. Vertikales dmos or bjt halbleiterbauelement
DE102017130213B4 (de) * 2017-12-15 2021-10-21 Infineon Technologies Ag Planarer feldeffekttransistor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110264A (en) * 1980-02-04 1981-09-01 Oki Electric Ind Co Ltd High withstand voltage mos transistor
JPS60249367A (ja) * 1984-05-25 1985-12-10 Hitachi Ltd 絶縁ゲ−ト形トランジスタ
IT1213234B (it) * 1984-10-25 1989-12-14 Sgs Thomson Microelectronics Procedimento perfezionato per la fabbricazione di dispositivi a semiconduttore dmos.
US5034790A (en) * 1989-05-23 1991-07-23 U.S. Philips Corp. MOS transistor with semi-insulating field plate and surface-adjoining top layer
JPH03155167A (ja) * 1989-11-13 1991-07-03 Sanyo Electric Co Ltd 縦型ｍｏｓｆｅｔ
IT1252625B (it) * 1991-12-05 1995-06-19 Cons Ric Microelettronica Processo di fabbricazione di transistors a effetto di campo con gate isolato (igfet) a bassa densita' di corto circuiti tra gate e source e dispositivi con esso ottenuti
IT1254799B (it) * 1992-02-18 1995-10-11 St Microelectronics Srl Transistore vdmos con migliorate caratteristiche di tenuta di tensione.
US5453390A (en) * 1992-03-30 1995-09-26 Nippondenso Co., Ltd. Method of producing semiconductor device with current detecting function
US5474946A (en) * 1995-02-17 1995-12-12 International Rectifier Corporation Reduced mask process for manufacture of MOS gated devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10243743B4 (de) * 2002-09-20 2010-04-08 Infineon Technologies Ag Quasivertikales Halbleiterbauelement

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US5430316A (en) 1995-07-04
EP0557253A2 (de) 1993-08-25
ITMI920344A0 (it) 1992-02-18
DE69315239D1 (de) 1998-01-02
ITMI920344A1 (it) 1993-08-18
JPH0613622A (ja) 1994-01-21
IT1254799B (it) 1995-10-11
EP0557253A3 (de) 1993-09-29
US5589405A (en) 1996-12-31
EP0557253B1 (de) 1997-11-19

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