DE69524276D1 - Resurf-laterale-DMOS-Bauelemente mit erweitertem Drain - Google Patents

Resurf-laterale-DMOS-Bauelemente mit erweitertem Drain

Info

Publication number
DE69524276D1
DE69524276D1 DE69524276T DE69524276T DE69524276D1 DE 69524276 D1 DE69524276 D1 DE 69524276D1 DE 69524276 T DE69524276 T DE 69524276T DE 69524276 T DE69524276 T DE 69524276T DE 69524276 D1 DE69524276 D1 DE 69524276D1
Authority
DE
Germany
Prior art keywords
resurf
extended drain
lateral dmos
dmos devices
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69524276T
Other languages
English (en)
Other versions
DE69524276T2 (de
Inventor
Chia-Cu P Mei
Satwinder Malhi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69524276D1 publication Critical patent/DE69524276D1/de
Application granted granted Critical
Publication of DE69524276T2 publication Critical patent/DE69524276T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69524276T 1994-04-08 1995-04-10 Resurf-laterale-DMOS-Bauelemente mit erweitertem Drain Expired - Fee Related DE69524276T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22491494A 1994-04-08 1994-04-08

Publications (2)

Publication Number Publication Date
DE69524276D1 true DE69524276D1 (de) 2002-01-17
DE69524276T2 DE69524276T2 (de) 2002-08-08

Family

ID=22842748

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69524276T Expired - Fee Related DE69524276T2 (de) 1994-04-08 1995-04-10 Resurf-laterale-DMOS-Bauelemente mit erweitertem Drain

Country Status (6)

Country Link
US (1) US5512495A (de)
EP (1) EP0676799B1 (de)
JP (1) JPH07297294A (de)
KR (1) KR100396170B1 (de)
DE (1) DE69524276T2 (de)
TW (1) TW305057B (de)

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TW366543B (en) * 1996-12-23 1999-08-11 Nxp Bv Semiconductor device
KR100249505B1 (ko) * 1997-10-28 2000-03-15 정선종 수평형 이중 확산 전력 소자의 제조 방법
KR100300069B1 (ko) 1999-05-10 2001-09-26 김영환 반도체 소자 및 그 제조방법
JP2001015741A (ja) * 1999-06-30 2001-01-19 Toshiba Corp 電界効果トランジスタ
EP1115158A1 (de) 2000-01-05 2001-07-11 Mitsubishi Denki Kabushiki Kaisha Soi-misfet
GB2374456A (en) * 2000-12-09 2002-10-16 Esm Ltd High-voltage metal oxide semiconductor device and method of forming the device
US6468870B1 (en) * 2000-12-26 2002-10-22 Taiwan Semiconductor Manufacturing Company Method of fabricating a LDMOS transistor
US6501139B1 (en) * 2001-03-30 2002-12-31 Matrix Semiconductor, Inc. High-voltage transistor and fabrication process
KR100867574B1 (ko) * 2002-05-09 2008-11-10 페어차일드코리아반도체 주식회사 고전압 디바이스 및 그 제조방법
KR100519642B1 (ko) * 2003-12-31 2005-10-07 동부아남반도체 주식회사 반도체 소자 형성 방법
DE102004009521B4 (de) * 2004-02-27 2020-06-10 Austriamicrosystems Ag Hochvolt-PMOS-Transistor, Maske zur Herstellung einer Wanne und Verfahren zur Herstellung eines Hochvolt-PMOS-Transistors
DE102004038369B4 (de) * 2004-08-06 2018-04-05 Austriamicrosystems Ag Hochvolt-NMOS-Transistor und Herstellungsverfahren
JP4959931B2 (ja) * 2004-09-29 2012-06-27 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
KR100614806B1 (ko) * 2004-10-27 2006-08-22 삼성전자주식회사 고내압 트랜지스터 및 이의 제조 방법
US7045830B1 (en) * 2004-12-07 2006-05-16 Fairchild Semiconductor Corporation High-voltage diodes formed in advanced power integrated circuit devices
US20060148103A1 (en) * 2004-12-30 2006-07-06 Yin-Peng Chen Highly sensitive biological assays
US20060220170A1 (en) * 2005-03-31 2006-10-05 Chih-Feng Huang High-voltage field effect transistor having isolation structure
US8174071B2 (en) * 2008-05-02 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage LDMOS transistor
US20100270614A1 (en) * 2009-04-22 2010-10-28 Stmicroelectronics S.R.L. Process for manufacturing devices for power applications in integrated circuits
EP2402998B1 (de) * 2010-07-01 2020-04-08 ams AG Herstellung eines p-Kanal-LDMOS-Transistors
US8664720B2 (en) 2010-08-25 2014-03-04 Infineon Technologies Ag High voltage semiconductor devices
US8754469B2 (en) * 2010-10-26 2014-06-17 Texas Instruments Incorporated Hybrid active-field gap extended drain MOS transistor
EP2665101B1 (de) 2012-05-14 2018-10-31 ams AG Verfahren zur Herstellung eines Hochspannungs-LDMOS-Transistors
CN104167360B (zh) * 2013-05-16 2017-05-31 无锡华润上华半导体有限公司 横向扩散金属氧化物半导体器件及其制造方法
CN105720099A (zh) * 2014-12-02 2016-06-29 无锡华润上华半导体有限公司 N型横向双扩散金属氧化物半导体场效应管
US10566200B2 (en) * 2018-04-03 2020-02-18 Texas Instruments Incorporated Method of fabricating transistors, including ambient oxidizing after etchings into barrier layers and anti-reflecting coatings
TWI656642B (zh) * 2018-05-08 2019-04-11 立錡科技股份有限公司 橫向雙擴散金屬氧化物半導體元件及其製造方法
CN113380787B (zh) * 2021-08-13 2022-02-25 上海维安半导体有限公司 一种双向瞬态电压抑制器件及其制备方法

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NL8203870A (nl) * 1982-10-06 1984-05-01 Philips Nv Halfgeleiderinrichting.
JPH07105434B2 (ja) * 1985-08-12 1995-11-13 松下電子工業株式会社 半導体装置の製造方法
JPH077795B2 (ja) * 1985-12-03 1995-01-30 株式会社東芝 半導体装置の製造方法
US5264719A (en) * 1986-01-07 1993-11-23 Harris Corporation High voltage lateral semiconductor device
US4987093A (en) * 1987-04-15 1991-01-22 Texas Instruments Incorporated Through-field implant isolated devices and method
US4984196A (en) * 1988-05-25 1991-01-08 Texas Instruments, Incorporated High performance bipolar differential sense amplifier in a BiCMOS SRAM
US5156989A (en) * 1988-11-08 1992-10-20 Siliconix, Incorporated Complementary, isolated DMOS IC technology
JPH02226743A (ja) * 1989-02-28 1990-09-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5047358A (en) * 1989-03-17 1991-09-10 Delco Electronics Corporation Process for forming high and low voltage CMOS transistors on a single integrated circuit chip
JP2504573B2 (ja) * 1989-08-08 1996-06-05 株式会社東芝 半導体装置及びその製造方法
US5013671A (en) * 1990-06-20 1991-05-07 Texas Instruments Incorporated Process for reduced emitter-base capacitance in bipolar transistor
DE69225552T2 (de) * 1991-10-15 1999-01-07 Texas Instruments Inc Lateraler doppel-diffundierter MOS-Transistor und Verfahren zu seiner Herstellung
US5306652A (en) * 1991-12-30 1994-04-26 Texas Instruments Incorporated Lateral double diffused insulated gate field effect transistor fabrication process
US5322804A (en) * 1992-05-12 1994-06-21 Harris Corporation Integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps
US5346835A (en) * 1992-07-06 1994-09-13 Texas Instruments Incorporated Triple diffused lateral resurf insulated gate field effect transistor compatible with process and method
US5422508A (en) * 1992-09-21 1995-06-06 Siliconix Incorporated BiCDMOS structure
US5328859A (en) * 1993-01-04 1994-07-12 Xerox Corporation Method of making high voltage PNP bipolar transistor in CMOS

Also Published As

Publication number Publication date
JPH07297294A (ja) 1995-11-10
US5512495A (en) 1996-04-30
KR100396170B1 (ko) 2003-11-14
TW305057B (de) 1997-05-11
EP0676799B1 (de) 2001-12-05
KR950034761A (ko) 1995-12-28
EP0676799A2 (de) 1995-10-11
EP0676799A3 (de) 1996-06-12
DE69524276T2 (de) 2002-08-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee