CN104167360B - 横向扩散金属氧化物半导体器件及其制造方法 - Google Patents

横向扩散金属氧化物半导体器件及其制造方法 Download PDF

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CN104167360B
CN104167360B CN201310186628.0A CN201310186628A CN104167360B CN 104167360 B CN104167360 B CN 104167360B CN 201310186628 A CN201310186628 A CN 201310186628A CN 104167360 B CN104167360 B CN 104167360B
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drift region
oxide layer
semiconductor device
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CN104167360A (zh
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章舒
韩广涛
孙贵鹏
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CSMC Technologies Corp
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Wuxi CSMC Semiconductor Co Ltd
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Abstract

本发明公开了一种横向扩散金属氧化物半导体器件的制造方法，包括下列步骤：在晶圆的衬底上生长氧化层；在晶圆表面涂覆光刻胶；使用第一光刻掩模版进行光刻，显影后露出第一注入窗口；通过第一注入窗口进行离子注入，在衬底内形成漂移区；去胶后再次于晶圆表面涂覆一层光刻胶；使用漂移区氧化层光刻掩模版进行光刻；对氧化层进行刻蚀，形成漂移区氧化层。本发明还涉及一种横向扩散金属氧化物半导体器件。本发明先生长漂移区氧化层，再进行漂移区注入。避免了热生长漂移区氧化层引起的漂移区注入离子的横扩区域浓度淡、导通电阻较高的问题，直接将较高浓度的离子注入到该区域，有效地降低了导通电阻。

Description

横向扩散金属氧化物半导体器件及其制造方法
技术领域
本发明涉及半导体器件的制造方法，特别是涉及一种横向扩散金属氧化物半导体器件的制造方法，还涉及一种横向扩散金属氧化物半导体器件。
背景技术
随着集成电路的不断发展，横向扩散金属氧化物半导体（LDMOS）器件被广泛应用于家电、汽车电子、医疗、军用电子的开关设备中。尽可能高的击穿电压（BV）和尽可能低的导通电阻（Rdson）是这类LDMOS的目标。
一种传统的采用小场氧结构（mini-LOCOS）的N沟道LDMOS制造方法包括如下步骤：
先用炉管长一层衬垫氧化层和一层衬垫氮化硅；再进行光刻胶涂布，利用漂移区（ND）光刻掩模版进行曝光，定义漂移区图形；在光刻胶的保护下利用腐蚀工艺将漂移区的衬垫氮化硅去掉；然后进行漂移区的离子注入，调整漂移区的浓度；再去除光刻胶后，利用衬垫氧化层和衬垫氮化硅作为掩蔽层，用炉管生长特定厚度的氧化层作为漂移区氧化层，然后将衬垫氮化硅和衬垫氧化层剥除。接着采用NG光刻版，在漂移区和漏极端进行注入浓度调整，形成浓度过渡区域。
在漂移区氧化层的热生长过程中，漂移区注入的杂质离子会向外扩散一定长度，如图1中A区域所示。在这个区域N型杂质浓度较低，当器件导通时，该区域贡献的电阻高，从而导致器件总的导通电阻偏高。
发明内容
基于此，为了解决LDMOS器件导通电阻高的问题，有必要提供一种新的横向扩散金属氧化物半导体器件的制造方法。
一种横向扩散金属氧化物半导体器件的制造方法，包括下列步骤：在晶圆的第一掺杂类型的衬底上生长氧化层；在所述晶圆表面涂覆光刻胶；使用第一光刻掩模版进行光刻，显影后露出第一注入窗口；通过所述第一注入窗口进行离子注入，在所述衬底内形成漂移区；所述离子注入是注入第二掺杂类型的杂质离子；去胶后再次于所述晶圆表面涂覆一层光刻胶；使用漂移区氧化层光刻掩模版进行光刻；对所述氧化层进行刻蚀，形成漂移区氧化层。
在其中一个实施例中，所述在晶圆的第一掺杂类型的衬底上生长氧化层的步骤之前还包括在所述衬底内形成第一掺杂类型的阱区的步骤，所述漂移区形成于所述阱区内。
在其中一个实施例中，所述第一掺杂类型为P型，所述第二掺杂类型为N型。
在其中一个实施例中，所述对氧化层进行刻蚀、形成漂移区氧化层的步骤之后，还包括淀积多晶硅并对所述多晶硅进行刻蚀以形成栅极的步骤，所述栅极的一部分覆盖于所述漂移区氧化层上。
在其中一个实施例中，所述离子注入的注入能量为110千电子伏～130千电子伏。
在其中一个实施例中，所述通过第一注入窗口进行离子注入、在所述衬底内形成漂移区的步骤是在一次注入中形成漂移区和漏极，所述离子注入完成时，所述漂移区和漏极内注入的掺杂离子浓度一致。
在其中一个实施例中，所述通过第一注入窗口进行离子注入、在所述衬底内形成漂移区的步骤之后，还包括使用漏极光刻掩模版进行光刻并注入在所述衬底内形成漏极的步骤。
还有必要提供一种横向扩散金属氧化物半导体器件。
一种横向扩散金属氧化物半导体器件，包括第一掺杂类型的衬底，设于所述衬底内第一掺杂类型的阱区，设于所述阱区内第一掺杂类型的体区、第二掺杂类型的源极、第二掺杂类型的漂移区及第二掺杂类型的漏极，设于所述阱区表面、所述体区和源极中间的场氧区，以及设于所述漂移区表面的漂移区氧化层，设于所述阱区上的栅极，所述栅极的一部分覆盖于所述漂移区氧化层上，所述漂移区和漏极为一体结构，所述漂移区和漏极的掺杂离子浓度相同。
在其中一个实施例中，所述第一掺杂类型为P型，所述第二掺杂类型为N型。
上述横向扩散金属氧化物半导体器件及其制造方法，先生长漂移区氧化层，再进行漂移区注入。避免了热生长漂移区氧化层引起的漂移区注入离子的横扩区域浓度淡、导通电阻较高的问题，直接将较高浓度的离子注入到该区域，有效地降低了导通电阻。
附图说明
图1是一种传统的N沟道LDMOS器件在制造过程中的剖面示意图；
图2是一实施例中横向扩散金属氧化物半导体器件的制造方法的流程图；
图3是一实施例中横向扩散金属氧化物半导体器件在制造过程中的剖面示意图。
具体实施方式
为使本发明的目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
图2是一实施例中横向扩散金属氧化物半导体器件的制造方法的流程图，包括下列步骤：
S210，在晶圆的衬底上生长氧化层。
在本实施例中，是采用炉管的方式在第一掺杂类型的衬底上生长所需厚度（因后续步骤中会被刻蚀作为漂移区氧化层，因此所需的厚度为漂移区氧化层的厚度）的氧化层。在其它实施例中，也可以采用其它方式生长该氧化层，例如化学气相淀积（CVD）等。
本实施例是以制造N沟道LDMOS进行说明，第一掺杂类型是P型，第二掺杂类型是N型，可以理解的，本领域技术人员同样可以将该横向扩散金属氧化物半导体器件的制造方法应用于P沟道LDMOS上。
在其中一个实施例中，于步骤S210之前还包括在衬底内形成第一掺杂类型的阱区的步骤。
S220，在晶圆表面涂覆光刻胶。
S230，使用第一光刻掩模版进行光刻，显影后露出第一注入窗口。
该第一光刻掩模版是将漂移区图形和漏极（drain）图形合并在一起后得到的光刻掩模版。通过该光刻掩模版进行曝光并显影，漂移区和漏极上方的光刻胶被显影液溶解从而暴露出来，形成第一注入窗口。
S240，通过第一注入窗口进行离子注入，在衬底内形成漂移区和漏极。
注入第二掺杂类型的杂质离子，该注入离子穿过步骤S210中形成的氧化层，于前述阱区内形成漂移区和漏极，注入区域的范围包括图1中的A区域。由于是同时对漂移区和漏极进行注入，因此漂移区和漏极内N型杂质离子的浓度一致。
在本实施例中，该离子注入步骤的注入能量为110千电子伏～130千电子伏。
在其它实施例中，也可以在步骤S240之后再进行一次漏极的光刻和调整注入。
S250，去胶后再次于晶圆表面涂覆一层光刻胶。
将步骤S220中涂覆的光刻胶去除后，再次涂覆一层光刻胶。
S260，使用漂移区氧化层光刻掩模版进行光刻。
曝光并显影后，将步骤S210中形成的氧化层需要刻蚀掉的部分曝露出来。
S270，对氧化层进行刻蚀，形成漂移区氧化层。
本发明还提供一种横向扩散金属氧化物半导体器件，其可以采用上述横向扩散金属氧化物半导体器件的制造方法进行制造。图3是一实施例中横向扩散金属氧化物半导体器件在制造过程中的剖面示意图，该实施例中的器件是N沟道LDMOS，包括P型衬底310，衬底310内的P型阱区320，阱区320内的P型体区330、N型源极340、N型漂移区352及N型漏极350，嵌入阱区320表面、位于体区330和源极340中间将它们隔开的场氧区（图3中未标示），设于漂移区352表面的漂移区氧化层360，以及设于阱区320上的栅极370。阱区320边界处的表面还设有硅的局部氧化区域（Local Oxidation of Silocon,LOCOS），栅极370的一部分覆盖于漂移区氧化层360上。漂移区352和漏极350为一体结构，由于其离子注入是在同一工序中进行的，因此漂移区352和漏极350的掺杂离子浓度相同。
上述横向扩散金属氧化物半导体器件及其制造方法，先生长漂移区氧化层360，再进行漂移区注入。避免了热生长漂移区氧化层352引起的漂移区注入离子的横扩（图3中漂移区氧化层352左右两端与漂移区氧化层352的其它部分浓度一致），有效地降低了导通电阻（Rdson）。漂移区352和漏极350的浓度调整注入合并为一次注入，简单而有效地降低了漏极电场，降低了工艺复杂度，缩短了生产周期；且相对于传统技术节省一块光刻掩模版，能够降低生产成本。漂移区352的形成只需要一次炉管，与传统技术mini-LOCOS结构的3次炉管（衬垫氧化层——衬垫氮化硅——漂移区氧化层）相比，有效地降低了制作成本和生产周期。
下表示出了改进前和改进后N沟道LDMOS结构的击穿电压（BV）和导通电阻（Rdson）的一个对比，可以看到改进前后BV相当，而Rdson可以降低约30%。
结构 BV/V Rdson/mohm*mm2
改进前 22.9 10.11
改进后 22.5 7.02
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (8)

1.一种横向扩散金属氧化物半导体器件的制造方法，包括下列步骤：
在晶圆的第一掺杂类型的衬底上生长氧化层；
在所述晶圆表面涂覆光刻胶；
使用第一光刻掩模版进行光刻，显影后露出第一注入窗口；
通过所述第一注入窗口进行离子注入，离子穿过所述氧化层在所述衬底内形成漂移区；所述离子注入是注入第二掺杂类型的杂质离子；
去胶后再次于所述晶圆表面涂覆一层光刻胶；
使用漂移区氧化层光刻掩模版进行光刻；
对所述氧化层进行刻蚀，形成设于所述漂移区表面的漂移区氧化层。
2.根据权利要求1所述的横向扩散金属氧化物半导体器件的制造方法，其特征在于，所述在晶圆的第一掺杂类型的衬底上生长氧化层的步骤之前还包括在所述衬底内形成第一掺杂类型的阱区的步骤，所述漂移区形成于所述阱区内。
3.根据权利要求2所述的横向扩散金属氧化物半导体器件的制造方法，其特征在于，所述第一掺杂类型为P型，所述第二掺杂类型为N型。
4.根据权利要求1所述的横向扩散金属氧化物半导体器件的制造方法，其特征在于，所述对氧化层进行刻蚀、形成漂移区氧化层的步骤之后，还包括淀积多晶硅并对所述多晶硅进行刻蚀以形成栅极的步骤，所述栅极的一部分覆盖于所述漂移区氧化层上。
5.根据权利要求1所述的横向扩散金属氧化物半导体器件的制造方法，其特征在于，所述离子注入的注入能量为110千电子伏～130千电子伏。
6.根据权利要求1所述的横向扩散金属氧化物半导体器件的制造方法，其特征在于，所述通过第一注入窗口进行离子注入、在所述衬底内形成漂移区的步骤是在一次注入中形成漂移区和漏极，所述离子注入完成时，所述漂移区和漏极内注入的掺杂离子浓度一致。
7.根据权利要求1所述的横向扩散金属氧化物半导体器件的制造方法，其特征在于，所述通过第一注入窗口进行离子注入、在所述衬底内形成漂移区的步骤之后，还包括使用漏极光刻掩模版进行光刻并注入在所述衬底内形成漏极的步骤。
8.一种根据权利要求1-7中任一项所述的方法制造的横向扩散金属氧化物半导体器件，其特征在于，包括第一掺杂类型的衬底，设于所述衬底内第一掺杂类型的阱区，设于所述阱区内第一掺杂类型的体区、第二掺杂类型的源极、第二掺杂类型的漂移区及第二掺杂类型的漏极，设于所述阱区表面、所述体区和源极中间的场氧区，以及设于所述漂移区表面的漂移区氧化层，设于所述阱区上的栅极，所述栅极的一部分覆盖于所述漂移区氧化层上，所述漂移区和漏极为一体结构，所述漂移区和漏极的掺杂离子浓度相同。
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