DE69418365D1 - Hochspannung-MIS-Feldeffekttransistor - Google Patents

Hochspannung-MIS-Feldeffekttransistor

Info

Publication number
DE69418365D1
DE69418365D1 DE69418365T DE69418365T DE69418365D1 DE 69418365 D1 DE69418365 D1 DE 69418365D1 DE 69418365 T DE69418365 T DE 69418365T DE 69418365 T DE69418365 T DE 69418365T DE 69418365 D1 DE69418365 D1 DE 69418365D1
Authority
DE
Germany
Prior art keywords
high voltage
field effect
effect transistor
mis field
voltage mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69418365T
Other languages
English (en)
Other versions
DE69418365T2 (de
Inventor
Naoto Fujishima
Akio Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE69418365D1 publication Critical patent/DE69418365D1/de
Application granted granted Critical
Publication of DE69418365T2 publication Critical patent/DE69418365T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69418365T 1993-02-15 1994-02-14 Hochspannung-MIS-Feldeffekttransistor Expired - Fee Related DE69418365T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02510993A JP3203858B2 (ja) 1993-02-15 1993-02-15 高耐圧ｍｉｓ電界効果トランジスタ

Publications (2)

Publication Number Publication Date
DE69418365D1 true DE69418365D1 (de) 1999-06-17
DE69418365T2 DE69418365T2 (de) 1999-09-16

Family

ID=12156765

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69431196T Expired - Fee Related DE69431196T2 (de) 1993-02-15 1994-02-14 Hochspannungs-MIS-Feldeffekttransistor
DE69418365T Expired - Fee Related DE69418365T2 (de) 1993-02-15 1994-02-14 Hochspannung-MIS-Feldeffekttransistor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69431196T Expired - Fee Related DE69431196T2 (de) 1993-02-15 1994-02-14 Hochspannungs-MIS-Feldeffekttransistor

Country Status (4)

Country Link
US (1) US5523599A (de)
EP (2) EP0613187B1 (de)
JP (1) JP3203858B2 (de)
DE (2) DE69431196T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4013785B2 (ja) * 1995-04-12 2007-11-28 富士電機デバイステクノロジー株式会社 高耐圧ｉｃ
JP4775357B2 (ja) * 1995-04-12 2011-09-21 富士電機株式会社 高耐圧ｉｃ
EP1699084B1 (de) * 1995-04-12 2011-05-25 Fuji Electric Systems Co., Ltd. Integrierter Hochspannungsschaltkreis, Hochspannungsübergangsabschluss- struktur und MIS-Hochspannungstransistor
JP3808116B2 (ja) * 1995-04-12 2006-08-09 富士電機デバイステクノロジー株式会社 高耐圧ｉｃ
US5714784A (en) * 1995-10-19 1998-02-03 Winbond Electronics Corporation Electrostatic discharge protection device
DE69533134T2 (de) 1995-10-30 2005-07-07 Stmicroelectronics S.R.L., Agrate Brianza Leistungsbauteil hoher Dichte in MOS-Technologie
EP0772242B1 (de) 1995-10-30 2006-04-05 STMicroelectronics S.r.l. Leistungsbauteil in MOS-Technologie mit einer einzelnen kritischen Grösse
TW400560B (en) * 1996-12-23 2000-08-01 Koninkl Philips Electronics Nv Semiconductor device
TW366543B (en) * 1996-12-23 1999-08-11 Nxp Bv Semiconductor device
EP0917738A2 (de) * 1997-04-28 1999-05-26 Koninklijke Philips Electronics N.V. Laterde mos-transistoranordnung
JP3175923B2 (ja) * 1997-11-05 2001-06-11 松下電子工業株式会社 半導体装置
EP0961325B1 (de) * 1998-05-26 2008-05-07 STMicroelectronics S.r.l. MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte
US6492663B1 (en) * 1999-05-20 2002-12-10 Richard A. Blanchard Universal source geometry for MOS-gated power devices
JP2001102569A (ja) * 1999-09-28 2001-04-13 Fuji Electric Co Ltd 半導体デバイス
US6867100B2 (en) * 2001-12-28 2005-03-15 Texas Instruments Incorporated System for high-precision double-diffused MOS transistors
JP4791113B2 (ja) * 2005-09-12 2011-10-12 オンセミコンダクター・トレーディング・リミテッド 半導体装置
US7521773B2 (en) * 2006-03-31 2009-04-21 Fairchild Semiconductor Corporation Power device with improved edge termination
JP5515248B2 (ja) 2008-03-26 2014-06-11 富士電機株式会社 半導体装置
JP5586546B2 (ja) 2011-03-23 2014-09-10 株式会社東芝 半導体装置
US8872278B2 (en) 2011-10-25 2014-10-28 Fairchild Semiconductor Corporation Integrated gate runner and field implant termination for trench devices
US9379231B2 (en) 2012-02-17 2016-06-28 Infineon Technologies Americas Corp. Transistor having increased breakdown voltage
US9070755B2 (en) 2012-02-17 2015-06-30 International Rectifier Corporation Transistor having elevated drain finger termination
US10784372B2 (en) * 2015-04-03 2020-09-22 Magnachip Semiconductor, Ltd. Semiconductor device with high voltage field effect transistor and junction field effect transistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638867A (en) * 1979-09-07 1981-04-14 Hitachi Ltd Insulated gate type field effect transistor
JPS5712558A (en) * 1980-06-25 1982-01-22 Sanyo Electric Co Ltd Mos transistor having high withstand voltage
JPS5880869A (ja) * 1981-11-10 1983-05-16 Nec Corp 絶縁ゲ−ト形電界効果トランジスタ
JPS62242365A (ja) * 1986-04-15 1987-10-22 Matsushita Electronics Corp Ｍｏｓ形出力回路素子
US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
JPH01207976A (ja) * 1988-02-15 1989-08-21 Nec Corp 半導体装置
JPH01264262A (ja) * 1988-04-15 1989-10-20 Toshiba Corp Ｍｏｓ型電界効果トランジスタ
US5055896A (en) * 1988-12-15 1991-10-08 Siliconix Incorporated Self-aligned LDD lateral DMOS transistor with high-voltage interconnect capability

Also Published As

Publication number Publication date
EP0810672A2 (de) 1997-12-03
DE69418365T2 (de) 1999-09-16
DE69431196T2 (de) 2003-03-13
EP0810672B1 (de) 2002-08-14
EP0810672A3 (de) 1998-01-28
US5523599A (en) 1996-06-04
EP0613187A3 (de) 1994-12-21
JPH06244412A (ja) 1994-09-02
EP0613187B1 (de) 1999-05-12
DE69431196D1 (de) 2002-09-19
EP0613187A2 (de) 1994-08-31
JP3203858B2 (ja) 2001-08-27

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee