DE69325673T2 - Feldeffekttransistor - Google Patents
FeldeffekttransistorInfo
- Publication number
- DE69325673T2 DE69325673T2 DE69325673T DE69325673T DE69325673T2 DE 69325673 T2 DE69325673 T2 DE 69325673T2 DE 69325673 T DE69325673 T DE 69325673T DE 69325673 T DE69325673 T DE 69325673T DE 69325673 T2 DE69325673 T2 DE 69325673T2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- transistor
- field
- effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66469—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG], single electron transistors [SET], Coulomb blockade transistors, striped channel transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4072062A JPH05275463A (ja) | 1992-03-30 | 1992-03-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69325673D1 DE69325673D1 (de) | 1999-08-26 |
DE69325673T2 true DE69325673T2 (de) | 2000-04-06 |
Family
ID=13478535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69325673T Expired - Lifetime DE69325673T2 (de) | 1992-03-30 | 1993-03-29 | Feldeffekttransistor |
Country Status (4)
Country | Link |
---|---|
US (1) | US5514883A (de) |
EP (1) | EP0563847B1 (de) |
JP (1) | JPH05275463A (de) |
DE (1) | DE69325673T2 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3447438B2 (ja) * | 1994-12-06 | 2003-09-16 | 本田技研工業株式会社 | 電界効果トランジスタ |
ITTO980590A1 (it) * | 1998-07-06 | 2000-01-06 | C R F Societa Consotile Per Az | Fanale per autoveicoli con lenti di resnel segmentate |
JP3386789B2 (ja) * | 2000-09-29 | 2003-03-17 | 富士通カンタムデバイス株式会社 | 半導体装置及びその製造方法 |
US6548333B2 (en) | 2000-12-01 | 2003-04-15 | Cree, Inc. | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment |
US7030428B2 (en) | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
US6982204B2 (en) | 2002-07-16 | 2006-01-03 | Cree, Inc. | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
US7045404B2 (en) | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
US7901994B2 (en) | 2004-01-16 | 2011-03-08 | Cree, Inc. | Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers |
US7612390B2 (en) | 2004-02-05 | 2009-11-03 | Cree, Inc. | Heterojunction transistors including energy barriers |
US7170111B2 (en) | 2004-02-05 | 2007-01-30 | Cree, Inc. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
US7084441B2 (en) | 2004-05-20 | 2006-08-01 | Cree, Inc. | Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same |
US7432142B2 (en) | 2004-05-20 | 2008-10-07 | Cree, Inc. | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
US7238560B2 (en) | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
US20060017064A1 (en) | 2004-07-26 | 2006-01-26 | Saxler Adam W | Nitride-based transistors having laterally grown active region and methods of fabricating same |
US7456443B2 (en) | 2004-11-23 | 2008-11-25 | Cree, Inc. | Transistors having buried n-type and p-type regions beneath the source region |
US7709859B2 (en) | 2004-11-23 | 2010-05-04 | Cree, Inc. | Cap layers including aluminum nitride for nitride-based transistors |
US7355215B2 (en) | 2004-12-06 | 2008-04-08 | Cree, Inc. | Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies |
US7161194B2 (en) | 2004-12-06 | 2007-01-09 | Cree, Inc. | High power density and/or linearity transistors |
US7465967B2 (en) | 2005-03-15 | 2008-12-16 | Cree, Inc. | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions |
US7626217B2 (en) | 2005-04-11 | 2009-12-01 | Cree, Inc. | Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices |
US8575651B2 (en) | 2005-04-11 | 2013-11-05 | Cree, Inc. | Devices having thick semi-insulating epitaxial gallium nitride layer |
JP4917269B2 (ja) * | 2005-04-18 | 2012-04-18 | サンケン電気株式会社 | 半導体装置 |
US7615774B2 (en) | 2005-04-29 | 2009-11-10 | Cree.Inc. | Aluminum free group III-nitride based high electron mobility transistors |
US7544963B2 (en) | 2005-04-29 | 2009-06-09 | Cree, Inc. | Binary group III-nitride based high electron mobility transistors |
US9331192B2 (en) | 2005-06-29 | 2016-05-03 | Cree, Inc. | Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same |
US7709269B2 (en) | 2006-01-17 | 2010-05-04 | Cree, Inc. | Methods of fabricating transistors including dielectrically-supported gate electrodes |
US7592211B2 (en) | 2006-01-17 | 2009-09-22 | Cree, Inc. | Methods of fabricating transistors including supported gate electrodes |
US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
WO2011107158A1 (en) * | 2010-03-05 | 2011-09-09 | Epcos Ag | pHEMT HAVING A CHANNEL LENGTH LARGER THAN THE CHANNEL WIDTH |
JP5879816B2 (ja) * | 2011-08-19 | 2016-03-08 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US9041003B2 (en) * | 2011-10-11 | 2015-05-26 | Massachusetts Institute Of Technology | Semiconductor devices having a recessed electrode structure |
CN113013243B (zh) * | 2021-02-02 | 2022-05-10 | 深圳大学 | 一种氮化镓场效应管及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2554639B1 (fr) * | 1983-11-08 | 1986-02-21 | Thomson Csf | Transistor a effet de champ a tension de seuil reglable, et circuit integre comportant ce type de transistors |
JPS63316484A (ja) * | 1987-06-19 | 1988-12-23 | Fujitsu Ltd | 量子効果半導体装置 |
JPH01287969A (ja) * | 1988-05-13 | 1989-11-20 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2629408B2 (ja) * | 1989-06-29 | 1997-07-09 | 日本電気株式会社 | 電界効果トランジスタおよびその製造方法 |
JPH0366135A (ja) * | 1989-08-04 | 1991-03-20 | Fujitsu Ltd | 化合物半導体装置 |
US5019877A (en) * | 1989-08-31 | 1991-05-28 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor |
-
1992
- 1992-03-30 JP JP4072062A patent/JPH05275463A/ja active Pending
-
1993
- 1993-03-29 DE DE69325673T patent/DE69325673T2/de not_active Expired - Lifetime
- 1993-03-29 EP EP93105153A patent/EP0563847B1/de not_active Expired - Lifetime
-
1995
- 1995-01-06 US US08/370,211 patent/US5514883A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH05275463A (ja) | 1993-10-22 |
US5514883A (en) | 1996-05-07 |
DE69325673D1 (de) | 1999-08-26 |
EP0563847A2 (de) | 1993-10-06 |
EP0563847B1 (de) | 1999-07-21 |
EP0563847A3 (en) | 1995-12-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8330 | Complete renunciation |