DE69329093T2 - Hochspannungs-MIS-Transistor und Halbleiteranordnung - Google Patents
Hochspannungs-MIS-Transistor und HalbleiteranordnungInfo
- Publication number
- DE69329093T2 DE69329093T2 DE69329093T DE69329093T DE69329093T2 DE 69329093 T2 DE69329093 T2 DE 69329093T2 DE 69329093 T DE69329093 T DE 69329093T DE 69329093 T DE69329093 T DE 69329093T DE 69329093 T2 DE69329093 T2 DE 69329093T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- high voltage
- mis transistor
- voltage mis
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27961592A JP3203814B2 (ja) | 1992-10-19 | 1992-10-19 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69329093D1 DE69329093D1 (de) | 2000-08-31 |
| DE69329093T2 true DE69329093T2 (de) | 2000-12-21 |
Family
ID=17613455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69329093T Expired - Fee Related DE69329093T2 (de) | 1992-10-19 | 1993-10-18 | Hochspannungs-MIS-Transistor und Halbleiteranordnung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5436486A (de) |
| EP (1) | EP0594111B1 (de) |
| JP (1) | JP3203814B2 (de) |
| DE (1) | DE69329093T2 (de) |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4335298C1 (de) * | 1993-10-15 | 1995-03-23 | Siemens Ag | Schaltungsstruktur mit mindestens einem bipolaren Leistungsbauelement und Verfahren zu deren Betrieb |
| JPH08227999A (ja) * | 1994-12-21 | 1996-09-03 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法 |
| EP2325889B1 (de) * | 1995-04-12 | 2015-06-10 | Fuji Electric Co., Ltd. | Integrierter Hochspannungsschaltkreis, Hochspannungsübergangsabschlussstruktur und MIS-Hochspannungstransistor |
| JP4775357B2 (ja) * | 1995-04-12 | 2011-09-21 | 富士電機株式会社 | 高耐圧ｉｃ |
| JP4013785B2 (ja) * | 1995-04-12 | 2007-11-28 | 富士電機デバイステクノロジー株式会社 | 高耐圧ｉｃ |
| JP3808116B2 (ja) * | 1995-04-12 | 2006-08-09 | 富士電機デバイステクノロジー株式会社 | 高耐圧ｉｃ |
| US5770880A (en) * | 1996-09-03 | 1998-06-23 | Harris Corporation | P-collector H.V. PMOS switch VT adjusted source/drain |
| JP4440040B2 (ja) | 2004-08-27 | 2010-03-24 | 三菱電機株式会社 | 半導体装置 |
| JP4822292B2 (ja) | 2008-12-17 | 2011-11-24 | 三菱電機株式会社 | 半導体装置 |
| US9520486B2 (en) | 2009-11-04 | 2016-12-13 | Analog Devices, Inc. | Electrostatic protection device |
| IT1402879B1 (it) * | 2010-11-19 | 2013-09-27 | St Microelectronics Srl | Dispositivo igbt con regioni di emettitore sepolte |
| US10199482B2 (en) | 2010-11-29 | 2019-02-05 | Analog Devices, Inc. | Apparatus for electrostatic discharge protection |
| US8643101B2 (en) | 2011-04-20 | 2014-02-04 | United Microelectronics Corp. | High voltage metal oxide semiconductor device having a multi-segment isolation structure |
| US8742455B2 (en) * | 2011-05-11 | 2014-06-03 | Analog Devices, Inc. | Apparatus for electrostatic discharge protection |
| US8803193B2 (en) | 2011-05-11 | 2014-08-12 | Analog Devices, Inc. | Overvoltage and/or electrostatic discharge protection device |
| US8816389B2 (en) | 2011-10-21 | 2014-08-26 | Analog Devices, Inc. | Overvoltage and/or electrostatic discharge protection device |
| US8581338B2 (en) | 2011-05-12 | 2013-11-12 | United Microelectronics Corp. | Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof |
| US8501603B2 (en) | 2011-06-15 | 2013-08-06 | United Microelectronics Corp. | Method for fabricating high voltage transistor |
| US8592905B2 (en) | 2011-06-26 | 2013-11-26 | United Microelectronics Corp. | High-voltage semiconductor device |
| US20130043513A1 (en) | 2011-08-19 | 2013-02-21 | United Microelectronics Corporation | Shallow trench isolation structure and fabricating method thereof |
| US8729599B2 (en) | 2011-08-22 | 2014-05-20 | United Microelectronics Corp. | Semiconductor device |
| US8921937B2 (en) | 2011-08-24 | 2014-12-30 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device and method of fabricating the same |
| US8742498B2 (en) | 2011-11-03 | 2014-06-03 | United Microelectronics Corp. | High voltage semiconductor device and fabricating method thereof |
| US8482063B2 (en) | 2011-11-18 | 2013-07-09 | United Microelectronics Corporation | High voltage semiconductor device |
| US8587058B2 (en) | 2012-01-02 | 2013-11-19 | United Microelectronics Corp. | Lateral diffused metal-oxide-semiconductor device |
| US8492835B1 (en) | 2012-01-20 | 2013-07-23 | United Microelectronics Corporation | High voltage MOSFET device |
| US9093296B2 (en) | 2012-02-09 | 2015-07-28 | United Microelectronics Corp. | LDMOS transistor having trench structures extending to a buried layer |
| TWI523196B (zh) | 2012-02-24 | 2016-02-21 | 聯華電子股份有限公司 | 高壓金氧半導體電晶體元件及其佈局圖案 |
| US8890144B2 (en) | 2012-03-08 | 2014-11-18 | United Microelectronics Corp. | High voltage semiconductor device |
| US9236471B2 (en) | 2012-04-24 | 2016-01-12 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
| US9159791B2 (en) | 2012-06-06 | 2015-10-13 | United Microelectronics Corp. | Semiconductor device comprising a conductive region |
| US8836067B2 (en) | 2012-06-18 | 2014-09-16 | United Microelectronics Corp. | Transistor device and manufacturing method thereof |
| US8674441B2 (en) | 2012-07-09 | 2014-03-18 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device |
| US8643104B1 (en) | 2012-08-14 | 2014-02-04 | United Microelectronics Corp. | Lateral diffusion metal oxide semiconductor transistor structure |
| US8729631B2 (en) | 2012-08-28 | 2014-05-20 | United Microelectronics Corp. | MOS transistor |
| US8829611B2 (en) | 2012-09-28 | 2014-09-09 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device |
| US9196717B2 (en) | 2012-09-28 | 2015-11-24 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device |
| US8704304B1 (en) | 2012-10-05 | 2014-04-22 | United Microelectronics Corp. | Semiconductor structure |
| US20140110777A1 (en) | 2012-10-18 | 2014-04-24 | United Microelectronics Corp. | Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof |
| US9224857B2 (en) | 2012-11-12 | 2015-12-29 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
| US9035425B2 (en) | 2013-05-02 | 2015-05-19 | United Microelectronics Corp. | Semiconductor integrated circuit |
| US8896057B1 (en) | 2013-05-14 | 2014-11-25 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
| SE537230C2 (sv) | 2013-05-16 | 2015-03-10 | Klas Håkan Eklund Med K Eklund Innovation F | Bipolär transistorförstärkarkrets med isolerad gate |
| US8786362B1 (en) | 2013-06-04 | 2014-07-22 | United Microelectronics Corporation | Schottky diode having current leakage protection structure and current leakage protecting method of the same |
| US8941175B2 (en) | 2013-06-17 | 2015-01-27 | United Microelectronics Corp. | Power array with staggered arrangement for improving on-resistance and safe operating area |
| CN104347691B (zh) * | 2013-07-24 | 2017-05-24 | 旺宏电子股份有限公司 | 半导体装置及其操作方法 |
| US9136375B2 (en) | 2013-11-21 | 2015-09-15 | United Microelectronics Corp. | Semiconductor structure |
| US9490360B2 (en) | 2014-02-19 | 2016-11-08 | United Microelectronics Corp. | Semiconductor device and operating method thereof |
| US9484739B2 (en) | 2014-09-25 | 2016-11-01 | Analog Devices Global | Overvoltage protection device and method |
| US10181719B2 (en) | 2015-03-16 | 2019-01-15 | Analog Devices Global | Overvoltage blocking protection device |
| US10218349B2 (en) * | 2016-05-17 | 2019-02-26 | Littelfuse, Inc. | IGBT having improved clamp arrangement |
| US10134891B2 (en) * | 2016-08-30 | 2018-11-20 | United Microelectronics Corp. | Transistor device with threshold voltage adjusted by body effect |
| US9905558B1 (en) | 2016-12-22 | 2018-02-27 | Texas Instruments Incorporated | Conductivity modulated drain extended MOSFET |
| CN109643711B (zh) * | 2017-07-05 | 2023-06-16 | 力特有限公司 | 具有改进的钳位布置的igbt |
| KR102620431B1 (ko) * | 2018-11-14 | 2024-01-03 | 에이치알에스코리아 주식회사 | 플러그 커넥터 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3609413A (en) * | 1969-11-03 | 1971-09-28 | Fairchild Camera Instr Co | Circuit for the protection of monolithic silicon-controlled rectifiers from false triggering |
| EP0164106B1 (de) * | 1984-06-05 | 1989-09-13 | Kabushiki Kaisha Toshiba | PNPN-Schalterbauelement |
| US4712124A (en) * | 1986-12-22 | 1987-12-08 | North American Philips Corporation | Complementary lateral insulated gate rectifiers with matched "on" resistances |
| JPH0821713B2 (ja) * | 1987-02-26 | 1996-03-04 | 株式会社東芝 | 導電変調型ｍｏｓｆｅｔ |
| US4998156A (en) * | 1988-03-25 | 1991-03-05 | General Electric Company | Structure for a complementary-symmetry COMFET pair |
| EP0371785B1 (de) * | 1988-11-29 | 1996-05-01 | Kabushiki Kaisha Toshiba | Lateraler Leitfähigkeitsmodulations-MOSFET |
| JP2720574B2 (ja) * | 1990-05-11 | 1998-03-04 | 富士電機株式会社 | デュアルゲート型絶縁ゲートバイポーラトランジスタ |
-
1992
- 1992-10-19 JP JP27961592A patent/JP3203814B2/ja not_active Expired - Fee Related
-
1993
- 1993-10-18 DE DE69329093T patent/DE69329093T2/de not_active Expired - Fee Related
- 1993-10-18 US US08/137,355 patent/US5436486A/en not_active Expired - Fee Related
- 1993-10-18 EP EP93116810A patent/EP0594111B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3203814B2 (ja) | 2001-08-27 |
| EP0594111A1 (de) | 1994-04-27 |
| US5436486A (en) | 1995-07-25 |
| EP0594111B1 (de) | 2000-07-26 |
| DE69329093D1 (de) | 2000-08-31 |
| JPH06132525A (ja) | 1994-05-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |