DE69331915T2 - MIS-Feldeffekttransistor mit hoher Spannungsfestigkeit und integrierte Halbleiterschaltung - Google Patents
MIS-Feldeffekttransistor mit hoher Spannungsfestigkeit und integrierte HalbleiterschaltungInfo
- Publication number
- DE69331915T2 DE69331915T2 DE69331915T DE69331915T DE69331915T2 DE 69331915 T2 DE69331915 T2 DE 69331915T2 DE 69331915 T DE69331915 T DE 69331915T DE 69331915 T DE69331915 T DE 69331915T DE 69331915 T2 DE69331915 T2 DE 69331915T2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- high dielectric
- semiconductor circuit
- dielectric strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21770592 | 1992-08-17 | ||
JP30992092A JP3158738B2 (ja) | 1992-08-17 | 1992-11-19 | 高耐圧mis電界効果トランジスタおよび半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69331915D1 DE69331915D1 (de) | 2002-06-13 |
DE69331915T2 true DE69331915T2 (de) | 2002-09-05 |
Family
ID=26522170
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69324871T Expired - Fee Related DE69324871T2 (de) | 1992-08-17 | 1993-08-12 | Hochspannungs-MIS-Feldeffektransistor und integrierte Halbleiterschaltung |
DE69331915T Expired - Fee Related DE69331915T2 (de) | 1992-08-17 | 1993-08-12 | MIS-Feldeffekttransistor mit hoher Spannungsfestigkeit und integrierte Halbleiterschaltung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69324871T Expired - Fee Related DE69324871T2 (de) | 1992-08-17 | 1993-08-12 | Hochspannungs-MIS-Feldeffektransistor und integrierte Halbleiterschaltung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5432370A (de) |
EP (2) | EP0805499B1 (de) |
JP (1) | JP3158738B2 (de) |
DE (2) | DE69324871T2 (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3186405B2 (ja) * | 1994-03-08 | 2001-07-11 | 富士電機株式会社 | 横型mosfet |
US5801420A (en) * | 1994-09-08 | 1998-09-01 | Fuji Electric Co. Ltd. | Lateral semiconductor arrangement for power ICS |
JP4775357B2 (ja) * | 1995-04-12 | 2011-09-21 | 富士電機株式会社 | 高耐圧ic |
JP4013785B2 (ja) * | 1995-04-12 | 2007-11-28 | 富士電機デバイステクノロジー株式会社 | 高耐圧ic |
US5777362A (en) * | 1995-06-07 | 1998-07-07 | Harris Corporation | High efficiency quasi-vertical DMOS in CMOS or BICMOS process |
US5700727A (en) * | 1995-07-24 | 1997-12-23 | Micron Technology, Inc. | Method of forming a thin film transistor |
EP0757389B1 (de) * | 1995-07-31 | 2001-09-26 | STMicroelectronics S.r.l. | Hochspannungstreiberschaltung für induktive Lasten |
US6133607A (en) * | 1997-05-22 | 2000-10-17 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP3270405B2 (ja) * | 1998-01-26 | 2002-04-02 | セイコーインスツルメンツ株式会社 | 半導体装置 |
GB9826291D0 (en) * | 1998-12-02 | 1999-01-20 | Koninkl Philips Electronics Nv | Field-effect semi-conductor devices |
DE69832258T2 (de) | 1998-02-24 | 2006-08-03 | Stmicroelectronics S.R.L., Agrate Brianza | Schutzstruktur für integrierte elektronische Hochspannungsanordnungen |
JP4508304B2 (ja) * | 1998-11-26 | 2010-07-21 | 三洋電機株式会社 | 半導体集積回路装置 |
WO2000035020A1 (de) * | 1998-12-07 | 2000-06-15 | Infineon Technologies Ag | Laterales hochvolt-halbleiterbaulement mit reduziertem spezifischem einschaltwiderstand |
JP4797225B2 (ja) * | 1999-05-27 | 2011-10-19 | 富士電機株式会社 | 半導体装置 |
JP2001015741A (ja) | 1999-06-30 | 2001-01-19 | Toshiba Corp | 電界効果トランジスタ |
JP2001094094A (ja) * | 1999-09-21 | 2001-04-06 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2001102569A (ja) * | 1999-09-28 | 2001-04-13 | Fuji Electric Co Ltd | 半導体デバイス |
JP2001274390A (ja) | 2000-01-18 | 2001-10-05 | Fuji Electric Co Ltd | 高耐圧デバイスおよびその製造方法、不純物拡散領域の形成方法 |
JP2001298183A (ja) * | 2000-04-13 | 2001-10-26 | Mitsubishi Electric Corp | 半導体装置 |
US6525390B2 (en) | 2000-05-18 | 2003-02-25 | Fuji Electric Co., Ltd. | MIS semiconductor device with low on resistance and high breakdown voltage |
EP1340262A2 (de) * | 2000-11-27 | 2003-09-03 | Koninklijke Philips Electronics N.V. | Rom aus mehreren sicherungen mit auf mos anordnung basiernder zellstruktur und lese- und schreibverfahren dafür |
US6424007B1 (en) * | 2001-01-24 | 2002-07-23 | Power Integrations, Inc. | High-voltage transistor with buried conduction layer |
JP2002353441A (ja) * | 2001-05-22 | 2002-12-06 | Denso Corp | パワーmosトランジスタ |
US6662091B2 (en) * | 2001-06-29 | 2003-12-09 | Battelle Memorial Institute | Diagnostics/prognostics using wireless links |
US6889165B2 (en) | 2001-07-02 | 2005-05-03 | Battelle Memorial Institute | Application specific intelligent microsensors |
US6555883B1 (en) | 2001-10-29 | 2003-04-29 | Power Integrations, Inc. | Lateral power MOSFET for high switching speeds |
US7109562B2 (en) * | 2005-02-07 | 2006-09-19 | Leadtrend Technology Corp. | High voltage laterally double-diffused metal oxide semiconductor |
JP4857610B2 (ja) * | 2005-06-01 | 2012-01-18 | 株式会社日立製作所 | 高圧アナログ・スイッチicおよびそれを使った超音波診断装置 |
US8598659B2 (en) * | 2005-10-26 | 2013-12-03 | Hewlett-Packard Development Company, L.P. | Single finger gate transistor |
JP5070693B2 (ja) * | 2005-11-11 | 2012-11-14 | サンケン電気株式会社 | 半導体装置 |
JP5132077B2 (ja) * | 2006-04-18 | 2013-01-30 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
US7595523B2 (en) | 2007-02-16 | 2009-09-29 | Power Integrations, Inc. | Gate pullback at ends of high-voltage vertical transistor structure |
JP5104878B2 (ja) * | 2007-12-14 | 2012-12-19 | 富士電機株式会社 | 集積回路および半導体装置 |
JP2009259972A (ja) * | 2008-04-15 | 2009-11-05 | Panasonic Corp | 半導体装置、及び該半導体装置を用いたエネルギー伝達装置 |
JP2010177268A (ja) * | 2009-01-27 | 2010-08-12 | Asahi Kasei Electronics Co Ltd | 接合型fet、半導体装置およびその製造方法 |
JP5124533B2 (ja) * | 2009-06-30 | 2013-01-23 | 株式会社日立製作所 | 半導体装置、それを用いたプラズマディスプレイ駆動用半導体集積回路装置、及びプラズマディスプレイ装置 |
US20120175679A1 (en) * | 2011-01-10 | 2012-07-12 | Fabio Alessio Marino | Single structure cascode device |
US8847278B2 (en) | 2011-01-17 | 2014-09-30 | Fuji Electric Co., Ltd. | Semiconductor device comprising a breakdown withstanding section |
US9209098B2 (en) | 2011-05-19 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | HVMOS reliability evaluation using bulk resistances as indices |
JP6028402B2 (ja) * | 2012-06-07 | 2016-11-16 | 富士電機株式会社 | 半導体装置およびその製造方法 |
US10325988B2 (en) | 2013-12-13 | 2019-06-18 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped field plates |
CN107403837A (zh) * | 2016-05-20 | 2017-11-28 | 北大方正集团有限公司 | 一种横向双扩散金属氧化物半导体结构 |
CN106449768B (zh) * | 2016-11-25 | 2019-06-21 | 东莞市联洲知识产权运营管理有限公司 | 一种jfet管 |
US10937872B1 (en) * | 2019-08-07 | 2021-03-02 | Vanguard International Semiconductor Corporation | Semiconductor structures |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2310453C3 (de) * | 1973-03-02 | 1981-11-19 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen eines gegen Überspannungen geschützten Halbleiterbauelementes |
JPS56103463A (en) * | 1980-01-21 | 1981-08-18 | Nippon Denso Co Ltd | Semiconductor device of high withstand voltage planar type |
JPS57160159A (en) * | 1981-03-28 | 1982-10-02 | Toshiba Corp | High breakdown voltage planar type semiconductor device |
US4609929A (en) * | 1984-12-21 | 1986-09-02 | North American Philips Corporation | Conductivity-enhanced combined lateral MOS/bipolar transistor |
JPS6380569A (ja) * | 1986-09-24 | 1988-04-11 | Fuji Electric Co Ltd | 伝導度変調型横型mos−fet |
JPS63172468A (ja) * | 1987-01-12 | 1988-07-16 | Toshiba Corp | 入力保護回路 |
US5237186A (en) * | 1987-02-26 | 1993-08-17 | Kabushiki Kaisha Toshiba | Conductivity-modulation metal oxide field effect transistor with single gate structure |
US5105243A (en) * | 1987-02-26 | 1992-04-14 | Kabushiki Kaisha Toshiba | Conductivity-modulation metal oxide field effect transistor with single gate structure |
JPS63219667A (ja) * | 1987-03-10 | 1988-09-13 | 三菱電機株式会社 | 植毛方法 |
US4811075A (en) * | 1987-04-24 | 1989-03-07 | Power Integrations, Inc. | High voltage MOS transistors |
US5023678A (en) * | 1987-05-27 | 1991-06-11 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
US4866495A (en) * | 1987-05-27 | 1989-09-12 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
FR2616966B1 (fr) * | 1987-06-22 | 1989-10-27 | Thomson Semiconducteurs | Structure de transistors mos de puissance |
JP2679074B2 (ja) * | 1988-01-27 | 1997-11-19 | 富士電機株式会社 | 電界効果トランジスタ |
JPH01264262A (ja) * | 1988-04-15 | 1989-10-20 | Toshiba Corp | Mos型電界効果トランジスタ |
JP2645100B2 (ja) * | 1988-09-07 | 1997-08-25 | 株式会社東芝 | 電界効果型半導体装置 |
US5034790A (en) * | 1989-05-23 | 1991-07-23 | U.S. Philips Corp. | MOS transistor with semi-insulating field plate and surface-adjoining top layer |
JP2513874B2 (ja) * | 1989-12-28 | 1996-07-03 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5258641A (en) * | 1989-12-28 | 1993-11-02 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same |
JP2597412B2 (ja) * | 1990-03-20 | 1997-04-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPH04304658A (ja) * | 1991-04-02 | 1992-10-28 | Fuji Electric Co Ltd | 高耐圧半導体装置及びその製造方法 |
-
1992
- 1992-11-19 JP JP30992092A patent/JP3158738B2/ja not_active Expired - Lifetime
-
1993
- 1993-08-12 EP EP97111861A patent/EP0805499B1/de not_active Expired - Lifetime
- 1993-08-12 DE DE69324871T patent/DE69324871T2/de not_active Expired - Fee Related
- 1993-08-12 EP EP93112958A patent/EP0588067B1/de not_active Expired - Lifetime
- 1993-08-12 DE DE69331915T patent/DE69331915T2/de not_active Expired - Fee Related
-
1994
- 1994-10-07 US US08/319,774 patent/US5432370A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5432370A (en) | 1995-07-11 |
EP0588067A3 (de) | 1994-04-20 |
EP0588067A2 (de) | 1994-03-23 |
EP0805499A2 (de) | 1997-11-05 |
DE69324871D1 (de) | 1999-06-17 |
EP0805499A3 (de) | 1997-11-26 |
EP0805499B1 (de) | 2002-05-08 |
JPH06120510A (ja) | 1994-04-28 |
JP3158738B2 (ja) | 2001-04-23 |
DE69324871T2 (de) | 1999-09-09 |
DE69331915D1 (de) | 2002-06-13 |
EP0588067B1 (de) | 1999-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69331915D1 (de) | MIS-Feldeffekttransistor mit hoher Spannungsfestigkeit und integrierte Halbleiterschaltung | |
DE69329093T2 (de) | Hochspannungs-MIS-Transistor und Halbleiteranordnung | |
DE69118952T2 (de) | Halbleitervorrichtung mit integrierter Halbleiterschaltung und Betriebsverfahren dafür | |
DE69327357D1 (de) | Integrierte Halbleiterschaltungsanordnung | |
DE69419575D1 (de) | Integrierte Halbleiterschaltungsanordnung | |
DE69231115D1 (de) | Feldeffekttransistor und diesen Transistor enthaltende Hochfrequenzschaltungen | |
DE69420492T2 (de) | Halbleiterschaltkreisbauelement mit reduziertem Einfluss parasitärer Kapazitäten | |
DE69429979T2 (de) | Halbleiterintegriertes Schaltungsbauelement | |
DE69221966T2 (de) | Halbleiteranordnung mit verschmolzenen bipolaren und MOS-Transistoren und Herstellungsverfahren | |
EP0534632A3 (en) | Semiconductor integrated circuit device and method of fabricating the same | |
DE69328396D1 (de) | Integrierte Halbleiterschaltung und diese verwendende IC-Karte | |
DE69219405D1 (de) | Halbleiteranordnung mit hoher Durchbruchsspannung | |
EP0513639A3 (en) | Semiconductor field effect transistor device and fabrication thereof | |
DE69416355D1 (de) | Integrierte Halbleiterschaltungsanordnung | |
DE69333098D1 (de) | Integriertes Halbleiterschaltkreisbauelement und dessen Herstellungsverfahren | |
DE69233742D1 (de) | Halbleiterbauelement mit hoher Durchbruchspannung | |
DE69626704D1 (de) | Halbleiterhochspannungskurzschlussschaltung | |
DE69324911T2 (de) | Halbleiterbauelement mit hoher Spannungsfestigkeit und dielektrischer Isolierung | |
DE69333124D1 (de) | Halbleiteranordnung und Schaltung | |
DE69310559D1 (de) | Schaltungs-Halbleiterbauteil mit Gate | |
DE69027463T2 (de) | MOS-Feldeffekttransistor mit hoher Durchbruchsspannung | |
DE69317457T2 (de) | AFC-Schaltung und IC derselben | |
DE69320221T2 (de) | Integrierte Halbleiterschaltung mit Schutzvorrichtungen | |
DE69317853D1 (de) | Integrierte Halbleiterschaltung | |
DE59308468D1 (de) | Halbleiterbauelement mit hoher Durchbruchsspannung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |