DE69317853D1 - Integrierte Halbleiterschaltung - Google Patents

Integrierte Halbleiterschaltung

Info

Publication number
DE69317853D1
DE69317853D1 DE69317853T DE69317853T DE69317853D1 DE 69317853 D1 DE69317853 D1 DE 69317853D1 DE 69317853 T DE69317853 T DE 69317853T DE 69317853 T DE69317853 T DE 69317853T DE 69317853 D1 DE69317853 D1 DE 69317853D1
Authority
DE
Germany
Prior art keywords
semiconductor circuit
integrated semiconductor
integrated
circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69317853T
Other languages
English (en)
Other versions
DE69317853T2 (de
Inventor
Atsuo Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69317853D1 publication Critical patent/DE69317853D1/de
Application granted granted Critical
Publication of DE69317853T2 publication Critical patent/DE69317853T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
DE69317853T 1992-11-24 1993-01-21 Integrierte Halbleiterschaltung Expired - Fee Related DE69317853T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31358592A JP2749747B2 (ja) 1992-11-24 1992-11-24 半導体集積回路

Publications (2)

Publication Number Publication Date
DE69317853D1 true DE69317853D1 (de) 1998-05-14
DE69317853T2 DE69317853T2 (de) 1998-09-03

Family

ID=18043086

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69317853T Expired - Fee Related DE69317853T2 (de) 1992-11-24 1993-01-21 Integrierte Halbleiterschaltung

Country Status (3)

Country Link
EP (1) EP0598974B1 (de)
JP (1) JP2749747B2 (de)
DE (1) DE69317853T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69429815T2 (de) * 1994-11-24 2002-09-26 Stmicroelectronics S.R.L., Agrate Brianza Integrierte EEPROM-Schaltung mit reduziertem Substrat-Effekt und Zwei-Wannen-Herstellungsverfahren hiervon
WO2001009955A1 (en) * 1999-07-29 2001-02-08 Koninklijke Philips Electronics N.V. Non-volatile semiconductor memory device
TW569221B (en) * 2002-09-11 2004-01-01 Elan Microelectronics Corp Chip having on-system programmable nonvolatile memory and off-system programmable nonvolatile memory, and forming method and programming method of the same
JP6506095B2 (ja) * 2015-05-07 2019-04-24 エイブリック株式会社 半導体メモリ装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63157464A (ja) * 1986-12-22 1988-06-30 Matsushita Electronics Corp 半導体装置
US5287469A (en) * 1988-12-27 1994-02-15 Nec Corporation Electrically erasable and programmable non-volatile memory (EEPROM), wherein write pulses can be interrupted by subsequently received read requests
JPH04211155A (ja) * 1990-01-29 1992-08-03 Matsushita Electron Corp 半導体装置

Also Published As

Publication number Publication date
EP0598974A2 (de) 1994-06-01
EP0598974A3 (de) 1994-11-09
DE69317853T2 (de) 1998-09-03
JPH06163858A (ja) 1994-06-10
EP0598974B1 (de) 1998-04-08
JP2749747B2 (ja) 1998-05-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee