DE69231115D1 - Feldeffekttransistor und diesen Transistor enthaltende Hochfrequenzschaltungen - Google Patents

Feldeffekttransistor und diesen Transistor enthaltende Hochfrequenzschaltungen

Info

Publication number
DE69231115D1
DE69231115D1 DE69231115T DE69231115T DE69231115D1 DE 69231115 D1 DE69231115 D1 DE 69231115D1 DE 69231115 T DE69231115 T DE 69231115T DE 69231115 T DE69231115 T DE 69231115T DE 69231115 D1 DE69231115 D1 DE 69231115D1
Authority
DE
Germany
Prior art keywords
transistor
high frequency
field effect
frequency circuits
circuits containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69231115T
Other languages
English (en)
Other versions
DE69231115T2 (de
Inventor
Isamu Nagasako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Compound Semiconductor Devices Ltd
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69231115D1 publication Critical patent/DE69231115D1/de
Publication of DE69231115T2 publication Critical patent/DE69231115T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
    • H03B5/1852—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06—Transference of modulation using distributed inductance and capacitance
    • H03D9/0658—Transference of modulation using distributed inductance and capacitance by means of semiconductor devices having more than two electrodes
    • H03D9/0675—Transference of modulation using distributed inductance and capacitance by means of semiconductor devices having more than two electrodes using field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Junction Field-Effect Transistors (AREA)
DE1992631115 1991-07-23 1992-07-22 Feldeffekttransistor und diesen Transistor enthaltende Hochfrequenzschaltungen Expired - Fee Related DE69231115T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18148091 1991-07-23

Publications (2)

Publication Number Publication Date
DE69231115D1 true DE69231115D1 (de) 2000-07-06
DE69231115T2 DE69231115T2 (de) 2001-02-15

Family

ID=16101495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992631115 Expired - Fee Related DE69231115T2 (de) 1991-07-23 1992-07-22 Feldeffekttransistor und diesen Transistor enthaltende Hochfrequenzschaltungen

Country Status (4)

Country Link
US (1) US5345194A (de)
EP (1) EP0524620B1 (de)
JP (1) JP2800566B2 (de)
DE (1) DE69231115T2 (de)

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* Cited by examiner, † Cited by third party
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US6265937B1 (en) 1994-09-26 2001-07-24 Endgate Corporation Push-pull amplifier with dual coplanar transmission line
US5983089A (en) * 1994-09-26 1999-11-09 Endgate Corporation Slotline-mounted flip chip
US6094114A (en) * 1994-09-26 2000-07-25 Endgate Corporation Slotline-to-slotline mounted flip chip
US5978666A (en) * 1994-09-26 1999-11-02 Endgate Corporation Slotline-mounted flip chip structures
US5821827A (en) * 1996-12-18 1998-10-13 Endgate Corporation Coplanar oscillator circuit structures
DE69823415T2 (de) 1997-03-07 2004-09-02 Deutsche Thomson-Brandt Gmbh Schaltungsanordnung zum Vermeiden von parasitären Oszillatorbetriebszuständen in einer Oszillatorschaltung
DE19709289A1 (de) * 1997-03-07 1998-09-10 Thomson Brandt Gmbh Schaltung zur Vermeidung von parasitären Schwingmodi in einem Oszillator Schwingkreis
JP3515886B2 (ja) * 1997-09-29 2004-04-05 三菱電機株式会社 半導体装置およびその製造方法
US5959522A (en) * 1998-02-03 1999-09-28 Motorola, Inc. Integrated electromagnetic device and method
JPH11340738A (ja) * 1998-05-22 1999-12-10 Murata Mfg Co Ltd 発振器および通信機装置
JP3318928B2 (ja) * 1999-04-12 2002-08-26 日本電気株式会社 半導体装置
US6201283B1 (en) * 1999-09-08 2001-03-13 Trw Inc. Field effect transistor with double sided airbridge
JP3521834B2 (ja) * 2000-03-07 2004-04-26 株式会社村田製作所 共振器、フィルタ、発振器、デュプレクサおよび通信装置
JP2002353411A (ja) 2001-05-25 2002-12-06 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
JP2002368193A (ja) * 2001-06-08 2002-12-20 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
DE10336720B4 (de) * 2003-08-11 2007-07-12 Gronefeld, Andreas, Dr.-Ing. Optimale Resonatorkopplung an Mikrowellentransistoren bei Breitbandoszillatoren
JP5550224B2 (ja) * 2008-09-29 2014-07-16 株式会社東芝 半導体装置
JP5612842B2 (ja) * 2009-09-07 2014-10-22 キヤノン株式会社 発振器
JP2013197331A (ja) * 2012-03-21 2013-09-30 Sumitomo Electric Ind Ltd 半導体デバイス
KR101462391B1 (ko) * 2013-06-18 2014-11-17 전자부품연구원 터미네이션부를 포함하는 알에프 소자
US9553084B2 (en) * 2013-09-09 2017-01-24 Mitsubishi Electric Corporation Switching element, semiconductor device, and semiconductor device manufacturing method
WO2015178050A1 (ja) * 2014-05-21 2015-11-26 シャープ株式会社 電界効果トランジスタ

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1327352A (en) * 1971-10-02 1973-08-22 Kyoto Ceramic Semiconductor device
JPS51151080A (en) * 1975-06-20 1976-12-25 Sanyo Electric Co Ltd Schottky barrier gate fet
JPS5230162A (en) * 1975-09-03 1977-03-07 Hitachi Ltd Semiconductor device
NL7609676A (nl) * 1975-09-03 1977-03-07 Hitachi Ltd Verbindingsaansluiting voor een halfgeleider- inrichting.
JPS52119859A (en) * 1976-04-02 1977-10-07 Hitachi Ltd Electrode constitution of semi-conductor device
JPS6047764B2 (ja) * 1977-01-21 1985-10-23 ソニー株式会社 集積回路化マイクロ波発振器
JPS55120152A (en) * 1979-03-09 1980-09-16 Fujitsu Ltd Semiconductor device
FR2498843A1 (fr) * 1981-01-28 1982-07-30 Labo Electronique Physique Dispositif oscillateur-melangeur stabilise par un resonateur dielectrique
EP0166112B1 (de) * 1984-04-28 1990-07-04 Sony Corporation Halbleiterbauelement mit von Source- und/oder Drain-Gebieten umgebenen Anschlussflächen
JPS62188275A (ja) * 1986-02-13 1987-08-17 Nec Corp 電界効果トランジスタ
FR2608318B1 (fr) * 1986-12-16 1989-06-16 Thomson Semiconducteurs Dispositif semi-conducteur a faible bruit en hyperfrequence, monte dans un boitier
JP2548160B2 (ja) * 1987-01-09 1996-10-30 松下電子工業株式会社 半導体装置
CA1253222A (en) * 1987-05-05 1989-04-25 Antun Stajcer Dielectrically stabilized gaas fet oscillator with two power output terminals

Also Published As

Publication number Publication date
JPH05304175A (ja) 1993-11-16
EP0524620B1 (de) 2000-05-31
DE69231115T2 (de) 2001-02-15
JP2800566B2 (ja) 1998-09-21
US5345194A (en) 1994-09-06
EP0524620A3 (en) 1993-05-26
EP0524620A2 (de) 1993-01-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC COMPOUND SEMICONDUCTOR DEVICES, LTD., KAWASAKI

8339 Ceased/non-payment of the annual fee