JP5550224B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5550224B2 JP5550224B2 JP2008249639A JP2008249639A JP5550224B2 JP 5550224 B2 JP5550224 B2 JP 5550224B2 JP 2008249639 A JP2008249639 A JP 2008249639A JP 2008249639 A JP2008249639 A JP 2008249639A JP 5550224 B2 JP5550224 B2 JP 5550224B2
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- semiconductor device
- resistor
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- gate pad
- pad electrode
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- 239000004065 semiconductor Substances 0.000 title claims description 72
- 239000000758 substrate Substances 0.000 claims description 23
- 230000005669 field effect Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000002411 adverse Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Description
2 ソース電極
3 ドレイン電極
4 素子分離領域
5 単位ユニット
6 ゲートバス配線
7 ソースバス配線
8 ドレインバス配線
9 ゲートパッド電極
10 単位セル
11 抵抗体
12 抵抗間配線
13 オーミック電極
14 イオン注入による素子分離領域
16 GaN層
17 AlGaN層
18 ソースパッド電極
19 ドレインパッド電極
20 エアーブリッジ配線
21 半導体基板
22 バイアホール
23 裏面配線
Claims (4)
- 窒化物系半導体基板上に形成される複数の電界効果トランジスタが並列接続される単位セルを、さらに複数並列接続する半導体装置において、
前記単位セルを構成する前記電界効果トランジスタの複数のゲート電極同士を接続するゲートバス配線に接続され、前記ゲートバス配線よりも前記ゲート電極からの距離が離れたゲートパッド電極と、
前記ゲートパッド電極外周部の少なくとも一辺に沿って形成され、前記窒化物系半導体基板で形成される抵抗体と、
隣接する2個の前記ゲートパッド電極のそれぞれに設けられる前記抵抗体の間を接続する金属層と、
を有することを特徴とする半導体装置。 - 前記抵抗体が、前記ゲートパッド電極に隣接するゲートパッド電極側の一辺に沿って形成されることを特徴とする請求項1記載の半導体装置。
- 前記抵抗体は、イオン注入により他の素子と絶縁される前記窒化物系半導体基板上の領域に形成され、互いに対向するオーミック電極間に形成されることを特徴とする請求項1または請求項2記載の半導体装置。
- 前記抵抗体は、メサ分離により他の素子と絶縁される前記窒化物系半導体基板上の領域に形成され、互いに対向するオーミック電極間に形成されることを特徴とする請求項1または請求項2記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008249639A JP5550224B2 (ja) | 2008-09-29 | 2008-09-29 | 半導体装置 |
US12/561,882 US8169035B2 (en) | 2008-09-29 | 2009-09-17 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008249639A JP5550224B2 (ja) | 2008-09-29 | 2008-09-29 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010080815A JP2010080815A (ja) | 2010-04-08 |
JP5550224B2 true JP5550224B2 (ja) | 2014-07-16 |
Family
ID=42056471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008249639A Active JP5550224B2 (ja) | 2008-09-29 | 2008-09-29 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8169035B2 (ja) |
JP (1) | JP5550224B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5550316B2 (ja) * | 2009-12-10 | 2014-07-16 | 株式会社東芝 | 半導体装置の製造方法および半導体装置 |
JP5728258B2 (ja) | 2011-03-10 | 2015-06-03 | 株式会社東芝 | 半導体装置 |
WO2017176287A1 (en) | 2016-04-08 | 2017-10-12 | Power Integrations, Inc. | Integrated resistor for semiconductor device |
US9991373B1 (en) | 2016-12-06 | 2018-06-05 | Infineon Technologies Ag | Semiconductor device |
US9929107B1 (en) | 2016-12-06 | 2018-03-27 | Infineon Technologies Ag | Method for manufacturing a semiconductor device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03248440A (ja) * | 1990-02-26 | 1991-11-06 | Nec Corp | 高出力GaAs電界効果トランジスタ |
JPH0411743A (ja) * | 1990-04-28 | 1992-01-16 | Nec Corp | 半導体装置 |
JP2800566B2 (ja) * | 1991-07-23 | 1998-09-21 | 日本電気株式会社 | 電界効果トランジスタおよび高周波信号発振器および周波数変換回路 |
JPH07111271A (ja) * | 1993-10-08 | 1995-04-25 | Nec Corp | 高出力電界効果トランジスタ |
JP3515886B2 (ja) * | 1997-09-29 | 2004-04-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP3269475B2 (ja) * | 1998-02-16 | 2002-03-25 | 日本電気株式会社 | 半導体装置 |
US6545543B2 (en) * | 2001-07-06 | 2003-04-08 | Remec, Inc. | Small aspect ratio MMIC power amplifier layout |
JP4870644B2 (ja) * | 2006-12-05 | 2012-02-08 | 韓國電子通信研究院 | ミリメートル波帯域制御回路用高隔離度スイッチ素子 |
-
2008
- 2008-09-29 JP JP2008249639A patent/JP5550224B2/ja active Active
-
2009
- 2009-09-17 US US12/561,882 patent/US8169035B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2010080815A (ja) | 2010-04-08 |
US8169035B2 (en) | 2012-05-01 |
US20100078732A1 (en) | 2010-04-01 |
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