JP4316597B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4316597B2 JP4316597B2 JP2006250927A JP2006250927A JP4316597B2 JP 4316597 B2 JP4316597 B2 JP 4316597B2 JP 2006250927 A JP2006250927 A JP 2006250927A JP 2006250927 A JP2006250927 A JP 2006250927A JP 4316597 B2 JP4316597 B2 JP 4316597B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- source
- semiconductor device
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims description 23
- 238000007747 plating Methods 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000010931 gold Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000005669 field effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Description
図1に本実施形態の半導体装置であるFET素子の上面図を、図2にそのA−A’断面図を示す。図に示すように、例えば数10μmまで薄く研削されたGaAsからなる基板1上に半導体層2が形成されており、その表面に、ゲート電極3を挟んで交互にソース電極4、ドレイン電極5が平行に配列されたマルチフィンガー構造を有している。ソース電極4、ドレイン電極5は、例えばPt/AuGeなどのメタル層によりオーミックコンタクトを形成した後、例えばAu/Pt/Tiなどのメタル層が積層された構造を有している。基板1には、ソース電極4に到達するバイアホール6が形成されており、その内壁及び基板1裏面にはAuメッキにより形成された例えば5〜30μm厚のグランド電極7が形成されている。
Claims (5)
- 化合物半導体からなる基板と、
前記基板の表面上に形成される半導体層と、
それぞれ前記半導体層上に形成される複数のゲート電極、複数のソース電極、及び複数のドレイン電極と、
前記基板側から前記複数のソース電極の裏面にそれぞれ到達する複数のバイアホールと、
前記複数のバイアホール内壁及び前記基板の裏面に形成され、前記複数のソース電極をそれぞれ接続するグランド電極と、
前記複数のソース電極の表面側に形成され、前記複数のソース電極をそれぞれ接続する第1のエアーブリッジ配線を備えることを特徴とする半導体装置。 - 前記ソース電極及び前記ドレイン電極は、前記ゲート電極を挟んで交互に形成され、
外部回路と接続されるためのボンディングパッドと、
前記ソース電極及び前記ドレイン電極と、前記ボンディングパッド間を接続する第2のエアーブリッジ配線を備えることを特徴とする請求項1に記載の半導体装置。 - 前記第1のエアーブリッジ配線及び前記グランド電極は、隣接する前記ソース電極を接続することを特徴とする請求項1又は2に記載の半導体装置。
- 前記グランド電極、前記第1のエアーブリッジ配線及び前記第2のエアーブリッジ配線は、Auメッキにより形成されることを特徴とする請求項1から3のいずれかに記載の半導体装置。
- 前記基板はGaAs基板であることを特徴とする請求項1から4のいずれかに記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006250927A JP4316597B2 (ja) | 2006-09-15 | 2006-09-15 | 半導体装置 |
DE102007038385A DE102007038385A1 (de) | 2006-09-15 | 2007-08-14 | Halbleitervorrichtung |
US11/839,219 US7622776B2 (en) | 2006-09-15 | 2007-08-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006250927A JP4316597B2 (ja) | 2006-09-15 | 2006-09-15 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008072027A JP2008072027A (ja) | 2008-03-27 |
JP4316597B2 true JP4316597B2 (ja) | 2009-08-19 |
Family
ID=39105270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006250927A Expired - Fee Related JP4316597B2 (ja) | 2006-09-15 | 2006-09-15 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7622776B2 (ja) |
JP (1) | JP4316597B2 (ja) |
DE (1) | DE102007038385A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7939563B2 (en) | 2001-06-05 | 2011-05-10 | Kao Corporation | Remedy for hypertension |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5185041B2 (ja) * | 2008-09-25 | 2013-04-17 | 株式会社東芝 | 安定化回路および安定化回路を備える半導体装置 |
KR101142515B1 (ko) | 2010-07-08 | 2012-05-07 | 한국전기연구원 | Mosfet의 게이트-소스 간 절연체 형성 방법 |
CN103199804A (zh) * | 2012-01-09 | 2013-07-10 | 广州程星通信科技有限公司 | 宽带高功率反馈结构放大器 |
JP2013182992A (ja) * | 2012-03-01 | 2013-09-12 | Toshiba Corp | 半導体装置 |
JP2013183062A (ja) | 2012-03-02 | 2013-09-12 | Toshiba Corp | 半導体装置 |
JP2013183060A (ja) * | 2012-03-02 | 2013-09-12 | Toshiba Corp | 半導体装置 |
US9331154B2 (en) * | 2013-08-21 | 2016-05-03 | Epistar Corporation | High electron mobility transistor |
RU2540234C1 (ru) * | 2013-09-12 | 2015-02-10 | Закрытое акционерное общество "Научно-производственная фирма "Микран" | Сверхвысокочастотный транзистор |
JP2015056557A (ja) * | 2013-09-12 | 2015-03-23 | 株式会社東芝 | 半導体装置 |
JP7215800B2 (ja) * | 2019-02-19 | 2023-01-31 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法および半導体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5354695A (en) * | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
US5162258A (en) * | 1988-10-17 | 1992-11-10 | Lemnios Zachary J | Three metal personalization of application specific monolithic microwave integrated circuit |
JPH06326330A (ja) | 1993-05-13 | 1994-11-25 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPH07135210A (ja) * | 1993-11-10 | 1995-05-23 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP3515886B2 (ja) * | 1997-09-29 | 2004-04-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2000138236A (ja) | 1998-08-26 | 2000-05-16 | Mitsubishi Electric Corp | 半導体装置 |
JP4245726B2 (ja) | 1999-04-08 | 2009-04-02 | 三菱電機株式会社 | ミリ波帯半導体スイッチ回路 |
JP2004055869A (ja) | 2002-07-22 | 2004-02-19 | Nec Corp | 半導体装置 |
US7300821B2 (en) * | 2004-08-31 | 2007-11-27 | Micron Technology, Inc. | Integrated circuit cooling and insulating device and method |
US7355215B2 (en) * | 2004-12-06 | 2008-04-08 | Cree, Inc. | Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies |
EP1739736A1 (en) * | 2005-06-30 | 2007-01-03 | Interuniversitair Microelektronica Centrum ( Imec) | Method of manufacturing a semiconductor device |
US7675090B2 (en) * | 2005-05-13 | 2010-03-09 | Flextronics International Usa, Inc. | Semiconductor device having a contact on a buffer layer thereof and method of forming the same |
US7462891B2 (en) * | 2005-09-27 | 2008-12-09 | Coldwatt, Inc. | Semiconductor device having an interconnect with sloped walls and method of forming the same |
US7968978B2 (en) * | 2007-06-14 | 2011-06-28 | Raytheon Company | Microwave integrated circuit package and method for forming such package |
-
2006
- 2006-09-15 JP JP2006250927A patent/JP4316597B2/ja not_active Expired - Fee Related
-
2007
- 2007-08-14 DE DE102007038385A patent/DE102007038385A1/de not_active Withdrawn
- 2007-08-15 US US11/839,219 patent/US7622776B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7939563B2 (en) | 2001-06-05 | 2011-05-10 | Kao Corporation | Remedy for hypertension |
Also Published As
Publication number | Publication date |
---|---|
JP2008072027A (ja) | 2008-03-27 |
DE102007038385A1 (de) | 2008-03-27 |
US20080067563A1 (en) | 2008-03-20 |
US7622776B2 (en) | 2009-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4316597B2 (ja) | 半導体装置 | |
JP6350759B2 (ja) | 半導体装置 | |
US9837393B2 (en) | Semiconductor package with integrated semiconductor devices and passive component | |
JP2021190505A (ja) | 半導体装置 | |
US11380601B2 (en) | Semiconductor device and method for manufacturing semiconductor device | |
JP6615414B1 (ja) | 高周波増幅器および高周波増幅器モジュール | |
JP6759784B2 (ja) | 半導体モジュール | |
JP5550224B2 (ja) | 半導体装置 | |
KR100968800B1 (ko) | 고주파용 반도체 장치 | |
JP7357302B2 (ja) | 半導体モジュール、パワー半導体モジュールおよびそれらいずれかを用いたパワーエレクトロニクス機器 | |
JPH113916A (ja) | 高周波半導体装置及びその製造方法 | |
JP7063186B2 (ja) | 化合物半導体装置、化合物半導体装置の製造方法及び増幅器 | |
JP2021002644A (ja) | 半導体装置及びその製造方法 | |
US20190363042A1 (en) | Semiconductor device | |
WO2022070384A1 (ja) | 半導体装置 | |
KR100985807B1 (ko) | 전계 효과 트랜지스터 | |
JP2010186959A (ja) | 半導体パッケージおよびその作製方法 | |
US7042053B2 (en) | Semiconductor device with polymer insulation of some electrodes | |
JP2008042184A (ja) | 高周波用半導体装置 | |
TWI785503B (zh) | Rf電路模組及其製造方法 | |
US20230268343A1 (en) | Semiconductor device | |
WO2024084621A1 (ja) | 半導体装置 | |
JP2009064904A (ja) | 銅回路基板およびこれを用いた半導体モジュール装置 | |
JP2008042185A (ja) | 電界効果トランジスタ | |
JP2015173299A (ja) | 半導体モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080204 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081017 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081021 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081219 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090428 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090520 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120529 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120529 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130529 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130529 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140529 Year of fee payment: 5 |
|
LAPS | Cancellation because of no payment of annual fees |