DE69333124D1 - Halbleiteranordnung und Schaltung - Google Patents

Halbleiteranordnung und Schaltung

Info

Publication number
DE69333124D1
DE69333124D1 DE69333124T DE69333124T DE69333124D1 DE 69333124 D1 DE69333124 D1 DE 69333124D1 DE 69333124 T DE69333124 T DE 69333124T DE 69333124 T DE69333124 T DE 69333124T DE 69333124 D1 DE69333124 D1 DE 69333124D1
Authority
DE
Germany
Prior art keywords
circuit
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69333124T
Other languages
English (en)
Other versions
DE69333124T2 (de
Inventor
Satwinder Malhi
Chi-Cheong Shen
Oh-Kyong Kwon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69333124D1 publication Critical patent/DE69333124D1/de
Publication of DE69333124T2 publication Critical patent/DE69333124T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
DE69333124T 1992-11-30 1993-11-30 Halbleiteranordnung und Schaltung Expired - Fee Related DE69333124T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US985095 1992-11-30
US07/985,095 US5457068A (en) 1992-11-30 1992-11-30 Monolithic integration of microwave silicon devices and low loss transmission lines

Publications (2)

Publication Number Publication Date
DE69333124D1 true DE69333124D1 (de) 2003-09-04
DE69333124T2 DE69333124T2 (de) 2004-05-06

Family

ID=25531193

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69333124T Expired - Fee Related DE69333124T2 (de) 1992-11-30 1993-11-30 Halbleiteranordnung und Schaltung

Country Status (4)

Country Link
US (2) US5457068A (de)
EP (1) EP0600436B1 (de)
JP (1) JPH0750339A (de)
DE (1) DE69333124T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939739A (en) * 1996-05-31 1999-08-17 The Whitaker Corporation Separation of thermal and electrical paths in flip chip ballasted power heterojunction bipolar transistors
US5976941A (en) * 1997-06-06 1999-11-02 The Whitaker Corporation Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates
US6002375A (en) * 1997-09-02 1999-12-14 Motorola, Inc. Multi-substrate radio-frequency circuit
US5841184A (en) * 1997-09-19 1998-11-24 The Whitaker Corporation Integrated emitter drain bypass capacitor for microwave/RF power device applications
US7164186B2 (en) * 2002-09-30 2007-01-16 Texas Instruments Incorporated Structure of semiconductor device with sinker contact region
US9520356B1 (en) * 2015-09-09 2016-12-13 Analog Devices, Inc. Circuit with reduced noise and controlled frequency

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1527898A (fr) * 1967-03-16 1968-06-07 Radiotechnique Coprim Rtc Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication
EP0048175B1 (de) * 1980-09-17 1986-04-23 Hitachi, Ltd. Halbleiterbauelement und Verfahren zu dessen Herstellung
GB2100925B (en) * 1981-06-25 1985-06-05 Standard Telephones Cables Ltd Fabricating integrated circuits
JPS58105551A (ja) * 1981-11-20 1983-06-23 Fujitsu Ltd 半導体装置
US4473598A (en) * 1982-06-30 1984-09-25 International Business Machines Corporation Method of filling trenches with silicon and structures
US4611384A (en) * 1985-04-30 1986-09-16 Gte Laboratories Incorporated Method of making junction field effect transistor of static induction type
JPH07105436B2 (ja) * 1986-07-18 1995-11-13 株式会社東芝 半導体装置の製造方法
US4807022A (en) * 1987-05-01 1989-02-21 Raytheon Company Simultaneous formation of via hole and tub structures for GaAs monolithic microwave integrated circuits
FR2631488B1 (fr) * 1988-05-10 1990-07-27 Thomson Hybrides Microondes Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication
EP0343269B1 (de) * 1988-05-26 1993-05-12 Fairchild Semiconductor Corporation Verbindungssystem von hoher Leistungsfähigkeit für eine integrierte Schaltung
DE4006158A1 (de) * 1990-02-27 1991-09-12 Fraunhofer Ges Forschung Verfahren zum erzeugen einer isolierten, einkristallinen siliziuminsel
US5145795A (en) * 1990-06-25 1992-09-08 Motorola, Inc. Semiconductor device and method therefore
JPH0488657A (ja) * 1990-07-31 1992-03-23 Toshiba Corp 半導体装置とその製造方法
US5091330A (en) * 1990-12-28 1992-02-25 Motorola, Inc. Method of fabricating a dielectric isolated area
US5254491A (en) * 1991-09-23 1993-10-19 Motorola, Inc. Method of making a semiconductor device having improved frequency response

Also Published As

Publication number Publication date
EP0600436A3 (de) 1997-10-01
EP0600436B1 (de) 2003-07-30
DE69333124T2 (de) 2004-05-06
EP0600436A2 (de) 1994-06-08
US5612556A (en) 1997-03-18
US5457068A (en) 1995-10-10
JPH0750339A (ja) 1995-02-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee