DE69223706D1 - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
DE69223706D1
DE69223706D1 DE69223706T DE69223706T DE69223706D1 DE 69223706 D1 DE69223706 D1 DE 69223706D1 DE 69223706 T DE69223706 T DE 69223706T DE 69223706 T DE69223706 T DE 69223706T DE 69223706 D1 DE69223706 D1 DE 69223706D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69223706T
Other languages
English (en)
Other versions
DE69223706T2 (de
Inventor
Ichiro Shibasaki
Kazuhiro Nagase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Chemical Industry Co Ltd
Application granted granted Critical
Publication of DE69223706D1 publication Critical patent/DE69223706D1/de
Publication of DE69223706T2 publication Critical patent/DE69223706T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02466—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02549—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69223706T 1991-03-28 1992-03-27 Feldeffekttransistor Expired - Lifetime DE69223706T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP6498891 1991-03-28
JP6498791 1991-03-28
JP9015191 1991-04-22
JP19241091 1991-08-01
PCT/JP1992/000379 WO1992017908A1 (en) 1991-03-28 1992-03-27 Field effect transistor

Publications (2)

Publication Number Publication Date
DE69223706D1 true DE69223706D1 (de) 1998-02-05
DE69223706T2 DE69223706T2 (de) 1998-08-20

Family

ID=27464518

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223706T Expired - Lifetime DE69223706T2 (de) 1991-03-28 1992-03-27 Feldeffekttransistor

Country Status (5)

Country Link
US (1) US5430310A (de)
EP (1) EP0531550B1 (de)
KR (1) KR0124131B1 (de)
DE (1) DE69223706T2 (de)
WO (1) WO1992017908A1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
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JP3216354B2 (ja) * 1993-08-11 2001-10-09 ソニー株式会社 オーミック電極およびその形成方法ならびに半導体装置
US5663583A (en) * 1995-06-06 1997-09-02 Hughes Aircraft Company Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate
US5548140A (en) * 1995-06-06 1996-08-20 Hughes Aircraft Company High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt
JPH0936133A (ja) * 1995-07-14 1997-02-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH09129865A (ja) * 1995-11-06 1997-05-16 Mitsubishi Electric Corp 半導体装置
US5770868A (en) * 1995-11-08 1998-06-23 Martin Marietta Corporation GaAs substrate with compositionally graded AlGaAsSb buffer for fabrication of high-indium fets
US6448648B1 (en) * 1997-03-27 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Metalization of electronic semiconductor devices
US5798540A (en) * 1997-04-29 1998-08-25 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with InAlAsSb/AlSb barrier
JP3141838B2 (ja) * 1998-03-12 2001-03-07 日本電気株式会社 電界効果トランジスタ
SE0000115D0 (sv) * 2000-01-17 2000-01-17 Abb Ab A semiconductor device
JP2002208600A (ja) * 2001-01-10 2002-07-26 Fujitsu Quantum Devices Ltd 半導体装置
KR100604294B1 (ko) * 2001-10-01 2006-07-31 아사히 가세이 마이크로시스템 가부시끼가이샤 홀 소자 및 자기 센서
US7388268B2 (en) * 2002-01-15 2008-06-17 Asahi Kasei Electronics Co., Ltd. Compound semiconductor multilayer structure, hall device, and hall device manufacturing method
JP2004103656A (ja) * 2002-09-05 2004-04-02 Sony Corp 半導体装置及び半導体装置の製造方法
US6830953B1 (en) * 2002-09-17 2004-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Suppression of MOSFET gate leakage current
US6825506B2 (en) * 2002-11-27 2004-11-30 Intel Corporation Field effect transistor and method of fabrication
US6888179B2 (en) 2003-04-17 2005-05-03 Bae Systems Information And Electronic Systems Integration Inc GaAs substrate with Sb buffering for high in devices
TWI222750B (en) * 2003-04-25 2004-10-21 Univ Nat Cheng Kung Voltage adjustable multi-stage extrinsic transconductance amplification HEMT
US7633083B2 (en) * 2004-03-10 2009-12-15 Stc.Unm Metamorphic buffer on small lattice constant substrates
JP2006303393A (ja) * 2005-04-25 2006-11-02 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
JP4589410B2 (ja) * 2005-12-16 2010-12-01 旭化成エレクトロニクス株式会社 位置検出装置
US20080054300A1 (en) * 2006-06-30 2008-03-06 Philip Gene Nikkel Body contact structure and method for the reduction of drain lag and gate lag in field effect transistors
US7820541B2 (en) * 2006-09-14 2010-10-26 Teledyne Licensing, Llc Process for forming low defect density heterojunctions
US7518165B2 (en) * 2006-09-14 2009-04-14 Teledyne Licensing, Llc Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs
US7808016B2 (en) * 2006-09-14 2010-10-05 Teledyne Licensing, Llc Heterogeneous integration of low noise amplifiers with power amplifiers or switches
JP4894576B2 (ja) * 2007-03-16 2012-03-14 三菱電機株式会社 半導体光素子の製造方法
US7989842B2 (en) * 2009-02-27 2011-08-02 Teledyne Scientific & Imaging, Llc Method and apparatus for heterojunction barrier diode detector for ultrahigh sensitivity
JP2010272689A (ja) * 2009-05-21 2010-12-02 Renesas Electronics Corp 電界効果トランジスタ
CN103000692A (zh) * 2011-09-14 2013-03-27 鸿富锦精密工业（深圳）有限公司 薄膜晶体管结构及其制造方法
US9570609B2 (en) 2013-11-01 2017-02-14 Samsung Electronics Co., Ltd. Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same
US9484423B2 (en) 2013-11-01 2016-11-01 Samsung Electronics Co., Ltd. Crystalline multiple-nanosheet III-V channel FETs
US9355920B2 (en) * 2014-03-10 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor devices and FinFET devices, and FinFET devices
US9647098B2 (en) 2014-07-21 2017-05-09 Samsung Electronics Co., Ltd. Thermionically-overdriven tunnel FETs and methods of fabricating the same

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Publication number Priority date Publication date Assignee Title
CA1145482A (en) * 1979-12-28 1983-04-26 Takashi Mimura High electron mobility single heterojunction semiconductor device
JPS5953714B2 (ja) * 1979-12-28 1984-12-26 富士通株式会社 半導体装置
JPS5953714A (ja) * 1982-09-13 1984-03-28 Touyoubou Pet Koode Kk 熱寸法安定性のすぐれた合成繊維の製造方法
JPS605572A (ja) * 1983-06-24 1985-01-12 Agency Of Ind Science & Technol 高速半導体デバイスの製造方法
JPS60144979A (ja) * 1984-01-07 1985-07-31 Agency Of Ind Science & Technol 半導体デバイス
JP2668354B2 (ja) * 1984-08-25 1997-10-27 富士通株式会社 電界効果型半導体装置
JPS61131565A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd 電界効果型半導体装置
CA1256590A (en) * 1985-03-15 1989-06-27 Yuichi Matsui Compound semiconductor device with layers having different lattice constants
JP2621854B2 (ja) * 1985-05-31 1997-06-18 株式会社東芝 高移動度トランジスタ
JPS63272080A (ja) * 1987-04-30 1988-11-09 Fujitsu Ltd 半導体装置
JPH025439A (ja) * 1988-06-22 1990-01-10 Nec Corp 半導体基板
JPH02229438A (ja) * 1989-03-02 1990-09-12 Sumitomo Electric Ind Ltd 電界効果トランジスタ

Also Published As

Publication number Publication date
EP0531550B1 (de) 1997-12-29
DE69223706T2 (de) 1998-08-20
US5430310A (en) 1995-07-04
KR930700969A (ko) 1993-03-16
WO1992017908A1 (en) 1992-10-15
EP0531550A1 (de) 1993-03-17
KR0124131B1 (en) 1997-11-25
EP0531550A4 (de) 1994-01-26

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Legal Events

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8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN