DE69223706D1 - Feldeffekttransistor - Google Patents
FeldeffekttransistorInfo
- Publication number
- DE69223706D1 DE69223706D1 DE69223706T DE69223706T DE69223706D1 DE 69223706 D1 DE69223706 D1 DE 69223706D1 DE 69223706 T DE69223706 T DE 69223706T DE 69223706 T DE69223706 T DE 69223706T DE 69223706 D1 DE69223706 D1 DE 69223706D1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- transistor
- field
- effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02466—Antimonides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02549—Antimonides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6498791 | 1991-03-28 | ||
JP6498891 | 1991-03-28 | ||
JP9015191 | 1991-04-22 | ||
JP19241091 | 1991-08-01 | ||
PCT/JP1992/000379 WO1992017908A1 (en) | 1991-03-28 | 1992-03-27 | Field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69223706D1 true DE69223706D1 (de) | 1998-02-05 |
DE69223706T2 DE69223706T2 (de) | 1998-08-20 |
Family
ID=27464518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69223706T Expired - Lifetime DE69223706T2 (de) | 1991-03-28 | 1992-03-27 | Feldeffekttransistor |
Country Status (5)
Country | Link |
---|---|
US (1) | US5430310A (de) |
EP (1) | EP0531550B1 (de) |
KR (1) | KR0124131B1 (de) |
DE (1) | DE69223706T2 (de) |
WO (1) | WO1992017908A1 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3216354B2 (ja) * | 1993-08-11 | 2001-10-09 | ソニー株式会社 | オーミック電極およびその形成方法ならびに半導体装置 |
US5663583A (en) * | 1995-06-06 | 1997-09-02 | Hughes Aircraft Company | Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate |
US5548140A (en) * | 1995-06-06 | 1996-08-20 | Hughes Aircraft Company | High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt |
JPH0936133A (ja) * | 1995-07-14 | 1997-02-07 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JPH09129865A (ja) * | 1995-11-06 | 1997-05-16 | Mitsubishi Electric Corp | 半導体装置 |
US5770868A (en) * | 1995-11-08 | 1998-06-23 | Martin Marietta Corporation | GaAs substrate with compositionally graded AlGaAsSb buffer for fabrication of high-indium fets |
US6448648B1 (en) * | 1997-03-27 | 2002-09-10 | The United States Of America As Represented By The Secretary Of The Navy | Metalization of electronic semiconductor devices |
US5798540A (en) * | 1997-04-29 | 1998-08-25 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices with InAlAsSb/AlSb barrier |
JP3141838B2 (ja) * | 1998-03-12 | 2001-03-07 | 日本電気株式会社 | 電界効果トランジスタ |
SE0000115D0 (sv) * | 2000-01-17 | 2000-01-17 | Abb Ab | A semiconductor device |
JP2002208600A (ja) * | 2001-01-10 | 2002-07-26 | Fujitsu Quantum Devices Ltd | 半導体装置 |
CN100367526C (zh) * | 2001-10-01 | 2008-02-06 | 旭化成电子材料元件株式会社 | 霍尔器件和磁传感器 |
WO2003061025A1 (en) | 2002-01-15 | 2003-07-24 | Asahi Kasei Electronics Co., Ltd. | Compound semiconductor multilayer structure, hall device, and hall device manufacturing method |
JP2004103656A (ja) * | 2002-09-05 | 2004-04-02 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
US6830953B1 (en) * | 2002-09-17 | 2004-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Suppression of MOSFET gate leakage current |
US6825506B2 (en) * | 2002-11-27 | 2004-11-30 | Intel Corporation | Field effect transistor and method of fabrication |
US6888179B2 (en) | 2003-04-17 | 2005-05-03 | Bae Systems Information And Electronic Systems Integration Inc | GaAs substrate with Sb buffering for high in devices |
TWI222750B (en) * | 2003-04-25 | 2004-10-21 | Univ Nat Cheng Kung | Voltage adjustable multi-stage extrinsic transconductance amplification HEMT |
US7633083B2 (en) * | 2004-03-10 | 2009-12-15 | Stc.Unm | Metamorphic buffer on small lattice constant substrates |
JP2006303393A (ja) * | 2005-04-25 | 2006-11-02 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法 |
US7843190B2 (en) * | 2005-12-16 | 2010-11-30 | Asahi Kasei Emd Corporation | Position detection apparatus |
US20080054300A1 (en) * | 2006-06-30 | 2008-03-06 | Philip Gene Nikkel | Body contact structure and method for the reduction of drain lag and gate lag in field effect transistors |
US7820541B2 (en) * | 2006-09-14 | 2010-10-26 | Teledyne Licensing, Llc | Process for forming low defect density heterojunctions |
US7808016B2 (en) * | 2006-09-14 | 2010-10-05 | Teledyne Licensing, Llc | Heterogeneous integration of low noise amplifiers with power amplifiers or switches |
US7518165B2 (en) * | 2006-09-14 | 2009-04-14 | Teledyne Licensing, Llc | Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs |
JP4894576B2 (ja) * | 2007-03-16 | 2012-03-14 | 三菱電機株式会社 | 半導体光素子の製造方法 |
US7989842B2 (en) * | 2009-02-27 | 2011-08-02 | Teledyne Scientific & Imaging, Llc | Method and apparatus for heterojunction barrier diode detector for ultrahigh sensitivity |
JP2010272689A (ja) * | 2009-05-21 | 2010-12-02 | Renesas Electronics Corp | 電界効果トランジスタ |
CN103000692A (zh) * | 2011-09-14 | 2013-03-27 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管结构及其制造方法 |
US9484423B2 (en) | 2013-11-01 | 2016-11-01 | Samsung Electronics Co., Ltd. | Crystalline multiple-nanosheet III-V channel FETs |
US9570609B2 (en) | 2013-11-01 | 2017-02-14 | Samsung Electronics Co., Ltd. | Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same |
US9355920B2 (en) * | 2014-03-10 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming semiconductor devices and FinFET devices, and FinFET devices |
US9647098B2 (en) | 2014-07-21 | 2017-05-09 | Samsung Electronics Co., Ltd. | Thermionically-overdriven tunnel FETs and methods of fabricating the same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3072175D1 (de) * | 1979-12-28 | 1990-04-26 | Fujitsu Ltd | Halbleitervorrichtungen mit heterouebergang. |
JPS5953714B2 (ja) * | 1979-12-28 | 1984-12-26 | 富士通株式会社 | 半導体装置 |
JPS5953714A (ja) * | 1982-09-13 | 1984-03-28 | Touyoubou Pet Koode Kk | 熱寸法安定性のすぐれた合成繊維の製造方法 |
JPS605572A (ja) * | 1983-06-24 | 1985-01-12 | Agency Of Ind Science & Technol | 高速半導体デバイスの製造方法 |
JPS60144979A (ja) * | 1984-01-07 | 1985-07-31 | Agency Of Ind Science & Technol | 半導体デバイス |
JP2668354B2 (ja) * | 1984-08-25 | 1997-10-27 | 富士通株式会社 | 電界効果型半導体装置 |
JPS61131565A (ja) * | 1984-11-30 | 1986-06-19 | Fujitsu Ltd | 電界効果型半導体装置 |
CA1256590A (en) * | 1985-03-15 | 1989-06-27 | Yuichi Matsui | Compound semiconductor device with layers having different lattice constants |
JP2621854B2 (ja) * | 1985-05-31 | 1997-06-18 | 株式会社東芝 | 高移動度トランジスタ |
JPS63272080A (ja) * | 1987-04-30 | 1988-11-09 | Fujitsu Ltd | 半導体装置 |
JPH025439A (ja) * | 1988-06-22 | 1990-01-10 | Nec Corp | 半導体基板 |
JPH02229438A (ja) * | 1989-03-02 | 1990-09-12 | Sumitomo Electric Ind Ltd | 電界効果トランジスタ |
-
1992
- 1992-03-27 EP EP92907880A patent/EP0531550B1/de not_active Expired - Lifetime
- 1992-03-27 WO PCT/JP1992/000379 patent/WO1992017908A1/ja active IP Right Grant
- 1992-03-27 DE DE69223706T patent/DE69223706T2/de not_active Expired - Lifetime
- 1992-11-25 US US07/949,525 patent/US5430310A/en not_active Expired - Lifetime
- 1992-11-26 KR KR92702985A patent/KR0124131B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69223706T2 (de) | 1998-08-20 |
EP0531550A4 (de) | 1994-01-26 |
KR930700969A (ko) | 1993-03-16 |
EP0531550B1 (de) | 1997-12-29 |
US5430310A (en) | 1995-07-04 |
EP0531550A1 (de) | 1993-03-17 |
KR0124131B1 (en) | 1997-11-25 |
WO1992017908A1 (en) | 1992-10-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN |