DE69128232T2 - Feldeffekttransistor-Signalschaltunganordnung - Google Patents

Feldeffekttransistor-Signalschaltunganordnung

Info

Publication number
DE69128232T2
DE69128232T2 DE69128232T DE69128232T DE69128232T2 DE 69128232 T2 DE69128232 T2 DE 69128232T2 DE 69128232 T DE69128232 T DE 69128232T DE 69128232 T DE69128232 T DE 69128232T DE 69128232 T2 DE69128232 T2 DE 69128232T2
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
signal circuitry
transistor signal
circuitry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69128232T
Other languages
English (en)
Other versions
DE69128232D1 (de
Inventor
Naoto Andoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69128232D1 publication Critical patent/DE69128232D1/de
Publication of DE69128232T2 publication Critical patent/DE69128232T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)
DE69128232T 1990-10-09 1991-09-30 Feldeffekttransistor-Signalschaltunganordnung Expired - Fee Related DE69128232T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2271639A JP2557561B2 (ja) 1990-10-09 1990-10-09 半導体装置

Publications (2)

Publication Number Publication Date
DE69128232D1 DE69128232D1 (de) 1998-01-02
DE69128232T2 true DE69128232T2 (de) 1998-03-19

Family

ID=17502860

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128232T Expired - Fee Related DE69128232T2 (de) 1990-10-09 1991-09-30 Feldeffekttransistor-Signalschaltunganordnung

Country Status (4)

Country Link
US (1) US5334871A (de)
EP (1) EP0480611B1 (de)
JP (1) JP2557561B2 (de)
DE (1) DE69128232T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2758531B2 (ja) * 1992-04-22 1998-05-28 三菱電機株式会社 半導体装置
US5441460A (en) * 1993-12-10 1995-08-15 Djudin; Valery V. Gear box with eccentric piezoelectrically linked ring gears
JP3284816B2 (ja) * 1995-03-22 2002-05-20 ソニー株式会社 固体撮像装置
JP3439290B2 (ja) * 1995-12-28 2003-08-25 日本電気株式会社 半導体装置
JP3147048B2 (ja) * 1997-09-12 2001-03-19 日本電気株式会社 半導体装置
JP3831575B2 (ja) 2000-05-15 2006-10-11 三洋電機株式会社 化合物半導体スイッチ回路装置
JP2002289790A (ja) 2001-03-27 2002-10-04 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
TW530455B (en) 2001-04-19 2003-05-01 Sanyo Electric Co Switch circuit device of compound semiconductor
US20080157222A1 (en) * 2006-12-27 2008-07-03 Mediatek Inc. Rf integrated circuit device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS566476A (en) * 1979-06-28 1981-01-23 Nec Corp Ultrahigh frequency field effect transistor
US4456888A (en) * 1981-03-26 1984-06-26 Raytheon Company Radio frequency network having plural electrically interconnected field effect transistor cells
JPS5892277A (ja) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp 電界効果トランジスタの製造方法
US4670297A (en) * 1985-06-21 1987-06-02 Raytheon Company Evaporated thick metal and airbridge interconnects and method of manufacture
JPS6269684A (ja) * 1985-09-24 1987-03-30 Matsushita Electronics Corp 半導体集積回路
JPS62179771A (ja) * 1986-02-04 1987-08-06 Seiko Epson Corp 電界効果トランジスタ
JPH0419842Y2 (de) * 1986-11-28 1992-05-07
JPS63172475A (ja) * 1987-01-09 1988-07-16 Mitsubishi Electric Corp 半導体装置
JP2527778B2 (ja) * 1988-01-13 1996-08-28 三菱電機株式会社 半導体装置
JPH088264B2 (ja) * 1988-06-30 1996-01-29 株式会社東芝 半導体集積回路
US4939485A (en) * 1988-12-09 1990-07-03 Varian Associates, Inc. Microwave field effect switch
US5023677A (en) * 1990-05-02 1991-06-11 Texas Instruments Incorporated Low parasitic FET topology for power and low noise GaAs FETs

Also Published As

Publication number Publication date
EP0480611A2 (de) 1992-04-15
JP2557561B2 (ja) 1996-11-27
US5334871A (en) 1994-08-02
JPH04146667A (ja) 1992-05-20
DE69128232D1 (de) 1998-01-02
EP0480611B1 (de) 1997-11-19
EP0480611A3 (en) 1993-01-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee