DE69223427D1 - Leseverstärkerschaltung - Google Patents

Leseverstärkerschaltung

Info

Publication number
DE69223427D1
DE69223427D1 DE69223427T DE69223427T DE69223427D1 DE 69223427 D1 DE69223427 D1 DE 69223427D1 DE 69223427 T DE69223427 T DE 69223427T DE 69223427 T DE69223427 T DE 69223427T DE 69223427 D1 DE69223427 D1 DE 69223427D1
Authority
DE
Germany
Prior art keywords
amplifier circuit
sense amplifier
sense
circuit
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223427T
Other languages
English (en)
Other versions
DE69223427T2 (de
Inventor
Toshiyuki Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69223427D1 publication Critical patent/DE69223427D1/de
Publication of DE69223427T2 publication Critical patent/DE69223427T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
DE69223427T 1991-01-22 1992-01-15 Leseverstärkerschaltung Expired - Fee Related DE69223427T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3005485A JPH04238197A (ja) 1991-01-22 1991-01-22 センスアンプ回路

Publications (2)

Publication Number Publication Date
DE69223427D1 true DE69223427D1 (de) 1998-01-22
DE69223427T2 DE69223427T2 (de) 1998-04-02

Family

ID=11612549

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223427T Expired - Fee Related DE69223427T2 (de) 1991-01-22 1992-01-15 Leseverstärkerschaltung

Country Status (4)

Country Link
US (1) US5247483A (de)
EP (1) EP0496523B1 (de)
JP (1) JPH04238197A (de)
DE (1) DE69223427T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0903752B1 (de) * 1991-12-27 2001-11-14 Fujitsu Limited Nicht-flüchtige Halbleiter-Speicher-Vorrichtung
KR960000619B1 (ko) * 1991-12-27 1996-01-10 후지쓰 가부시끼가이샤 일괄소거형의 불휘발성 반도체 기억장치 및 그의 구동제어회로
US5559456A (en) * 1992-08-17 1996-09-24 Matsushita Electric Industrial Co., Ltd. Sensing circuit unit for a dynamic circuit
JPH08194679A (ja) * 1995-01-19 1996-07-30 Texas Instr Japan Ltd ディジタル信号処理方法及び装置並びにメモリセル読出し方法
KR970051285A (ko) * 1995-12-30 1997-07-29 김주용 센스 증폭기의 차동 전압 증가 장치
KR100230747B1 (ko) * 1996-11-22 1999-11-15 김영환 반도체 메모리장치의 저전력 감지증폭기(Low power sense amplifier in a semiconductor device)
KR100226254B1 (ko) * 1996-12-28 1999-10-15 김영환 반도체 메모리소자의 감지증폭기 인에이블신호 발생회로
JPH10334683A (ja) * 1997-05-28 1998-12-18 Mitsubishi Electric Corp メモリ装置
US6317375B1 (en) * 2000-08-31 2001-11-13 Hewlett-Packard Company Method and apparatus for reading memory cells of a resistive cross point array
US6654301B2 (en) * 2001-09-27 2003-11-25 Sun Microsystems, Inc. Multiple discharge capable bit line
US9257154B2 (en) * 2012-11-29 2016-02-09 Micron Technology, Inc. Methods and apparatuses for compensating for source voltage
US10032508B1 (en) * 2016-12-30 2018-07-24 Intel Corporation Method and apparatus for multi-level setback read for three dimensional crosspoint memory

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765002A (en) * 1971-04-20 1973-10-09 Siemens Ag Accelerated bit-line discharge of a mosfet memory
JPS5914832B2 (ja) * 1977-12-07 1984-04-06 株式会社東芝 電圧センス回路
JPS5837636B2 (ja) * 1980-07-31 1983-08-17 富士通株式会社 半導体記憶装置
JPS57117188A (en) * 1981-01-12 1982-07-21 Toshiba Corp Sense amplifier circuit
JPS5834628A (ja) * 1981-08-24 1983-03-01 Hitachi Ltd Ｍｏｓインバ−タ回路
US4456841A (en) * 1982-02-05 1984-06-26 International Business Machines Corporation Field effect level sensitive circuit
JPS6271097A (ja) * 1985-09-21 1987-04-01 Mitsubishi Electric Corp 半導体集積回路
JPS62188097A (ja) * 1986-02-13 1987-08-17 Matsushita Electric Ind Co Ltd 半導体メモリ回路
US4811301A (en) * 1987-04-28 1989-03-07 Texas Instruments Incorporated Low-power, noise-resistant read-only memory
JPH0814995B2 (ja) * 1989-01-27 1996-02-14 株式会社東芝 半導体メモリ

Also Published As

Publication number Publication date
DE69223427T2 (de) 1998-04-02
EP0496523A3 (de) 1994-04-20
EP0496523B1 (de) 1997-12-10
EP0496523A2 (de) 1992-07-29
US5247483A (en) 1993-09-21
JPH04238197A (ja) 1992-08-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee