DE69421052T2 - Linearer Feldeffekttransistor - Google Patents

Linearer Feldeffekttransistor

Info

Publication number
DE69421052T2
DE69421052T2 DE69421052T DE69421052T DE69421052T2 DE 69421052 T2 DE69421052 T2 DE 69421052T2 DE 69421052 T DE69421052 T DE 69421052T DE 69421052 T DE69421052 T DE 69421052T DE 69421052 T2 DE69421052 T2 DE 69421052T2
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
linear field
linear
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69421052T
Other languages
English (en)
Other versions
DE69421052D1 (de
Inventor
Pertti Ikalainen
Larry Witkowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69421052D1 publication Critical patent/DE69421052D1/de
Publication of DE69421052T2 publication Critical patent/DE69421052T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69421052T 1993-07-19 1994-07-19 Linearer Feldeffekttransistor Expired - Fee Related DE69421052T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/093,376 US5350936A (en) 1993-07-19 1993-07-19 Linear field effect transistor

Publications (2)

Publication Number Publication Date
DE69421052D1 DE69421052D1 (de) 1999-11-11
DE69421052T2 true DE69421052T2 (de) 2000-05-31

Family

ID=22238587

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421052T Expired - Fee Related DE69421052T2 (de) 1993-07-19 1994-07-19 Linearer Feldeffekttransistor

Country Status (4)

Country Link
US (2) US5350936A (de)
EP (1) EP0660420B1 (de)
JP (1) JPH07153780A (de)
DE (1) DE69421052T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350936A (en) * 1993-07-19 1994-09-27 Texas Instruments Incorporated Linear field effect transistor
JP3421306B2 (ja) * 2000-07-19 2003-06-30 富士通カンタムデバイス株式会社 化合物半導体装置
US6929987B2 (en) * 2003-12-23 2005-08-16 Hrl Laboratories, Llc Microelectronic device fabrication method
JP5313457B2 (ja) * 2007-03-09 2013-10-09 パナソニック株式会社 窒化物半導体装置及びその製造方法
US10068529B2 (en) 2016-11-07 2018-09-04 International Business Machines Corporation Active matrix OLED display with normally-on thin-film transistors

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58178572A (ja) * 1982-04-14 1983-10-19 Hiroyuki Sakaki 移動度変調形電界効果トランジスタ
US5091759A (en) * 1989-10-30 1992-02-25 Texas Instruments Incorporated Heterostructure field effect transistor
JPH02134829A (ja) * 1988-11-16 1990-05-23 Hitachi Ltd 半導体素子
US5141879A (en) * 1989-08-28 1992-08-25 Herbert Goronkin Method of fabricating a FET having a high trap concentration interface layer
US5234682A (en) * 1990-06-21 1993-08-10 Revlon Consumer Products Corporation Cosmetic compositions
DE69117866T2 (de) * 1990-10-26 1996-10-10 Nippon Telegraph & Telephone Heteroübergangsfeldeffekttransistor
US5298441A (en) * 1991-06-03 1994-03-29 Motorola, Inc. Method of making high transconductance heterostructure field effect transistor
JPH081955B2 (ja) * 1991-08-21 1996-01-10 ヒューズ・エアクラフト・カンパニー 反転変調ドープされたヘテロ構造の製造方法
JPH0642371A (ja) * 1992-07-23 1994-02-15 Zexel Corp 燃料噴射制御装置
US5254492A (en) * 1992-11-10 1993-10-19 Texas Instruments Incorporated Method of fabricating an integrated circuit for providing low-noise and high-power microwave operation
US5350936A (en) * 1993-07-19 1994-09-27 Texas Instruments Incorporated Linear field effect transistor

Also Published As

Publication number Publication date
JPH07153780A (ja) 1995-06-16
US5405793A (en) 1995-04-11
US5350936A (en) 1994-09-27
DE69421052D1 (de) 1999-11-11
EP0660420B1 (de) 1999-10-06
EP0660420A1 (de) 1995-06-28

Similar Documents

Publication Publication Date Title
DE69213702D1 (de) Feldeffekttransistor
DE69325673D1 (de) Feldeffekttransistor
DE69223706D1 (de) Feldeffekttransistor
DE69228278D1 (de) MOS-Feldeffekttransistor
DE69408605T2 (de) SOI-Transistor
DE69504128T2 (de) Modulationsdotierter Feldeffekttransistor
DE69410067D1 (de) Transistorschaltung
DE69116076D1 (de) Heterostruktur-Feldeffekttransistor
DE69109238D1 (de) Feldeffekttransistor.
DE69528203T2 (de) Transistor
DE69208297D1 (de) Feldeffekttransistor
DE69421052D1 (de) Linearer Feldeffekttransistor
DE69332112D1 (de) Verbesserter biolarer Transistor
DE69201708D1 (de) Feldeffekttransistor.
NO976070D0 (no) Felteffekttransistor
DE69429970D1 (de) Transistorschaltung
DE69517662T2 (de) Feldeffekt-Transistor
DE69407443T2 (de) Transistorschalter
DE69318686D1 (de) Komplementärer Feldeffekt-Transistor
DE69311093D1 (de) Feldeffekttransistor
DE69117441D1 (de) Feldeffektransistor
DE69412974D1 (de) Feldeffekttransistor mit Kontaktflächen
DE69317480D1 (de) Feldeffekttransistor
DE59407501D1 (de) Quasiteilchen-injektionstransistor
DE69317248D1 (de) Transistoranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee