DE69412974D1 - Feldeffekttransistor mit Kontaktflächen - Google Patents

Feldeffekttransistor mit Kontaktflächen

Info

Publication number
DE69412974D1
DE69412974D1 DE69412974T DE69412974T DE69412974D1 DE 69412974 D1 DE69412974 D1 DE 69412974D1 DE 69412974 T DE69412974 T DE 69412974T DE 69412974 T DE69412974 T DE 69412974T DE 69412974 D1 DE69412974 D1 DE 69412974D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
contact areas
areas
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69412974T
Other languages
English (en)
Other versions
DE69412974T2 (de
Inventor
Kuo-Hua Lee
Chun-Ting Liu
Ruichen Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69412974D1 publication Critical patent/DE69412974D1/de
Application granted granted Critical
Publication of DE69412974T2 publication Critical patent/DE69412974T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
DE69412974T 1993-12-01 1994-11-23 Feldeffekttransistor mit Kontaktflächen Expired - Fee Related DE69412974T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/159,897 US5407859A (en) 1993-12-01 1993-12-01 Field effect transistor with landing pad

Publications (2)

Publication Number Publication Date
DE69412974D1 true DE69412974D1 (de) 1998-10-08
DE69412974T2 DE69412974T2 (de) 1999-02-11

Family

ID=22574570

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69412974T Expired - Fee Related DE69412974T2 (de) 1993-12-01 1994-11-23 Feldeffekttransistor mit Kontaktflächen

Country Status (7)

Country Link
US (1) US5407859A (de)
EP (1) EP0656649B1 (de)
JP (1) JP2944902B2 (de)
KR (1) KR950021767A (de)
DE (1) DE69412974T2 (de)
ES (1) ES2120578T3 (de)
TW (1) TW257885B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0170285B1 (ko) * 1995-05-12 1999-03-30 김광호 반도체 장치의 소자 분리 방법
US5686761A (en) * 1995-06-06 1997-11-11 Advanced Micro Devices, Inc. Production worthy interconnect process for deep sub-half micrometer back-end-of-line technology

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1216962A (en) * 1985-06-28 1987-01-20 Hussein M. Naguib Mos device processing
US4922311A (en) * 1987-12-04 1990-05-01 American Telephone And Telegraph Company Folded extended window field effect transistor
US4844776A (en) * 1987-12-04 1989-07-04 American Telephone And Telegraph Company, At&T Bell Laboratories Method for making folded extended window field effect transistor
US5234851A (en) * 1989-09-05 1993-08-10 General Electric Company Small cell, low contact assistance rugged power field effect devices and method of fabrication
US5017515A (en) * 1989-10-02 1991-05-21 Texas Instruments Incorporated Process for minimizing lateral distance between elements in an integrated circuit by using sidewall spacers
JP2995838B2 (ja) * 1990-01-11 1999-12-27 セイコーエプソン株式会社 Ｍｉｓ型半導体装置及びその製造方法
US5206187A (en) * 1991-08-30 1993-04-27 Micron Technology, Inc. Method of processing semiconductor wafers using a contact etch stop
US5340761A (en) * 1991-10-31 1994-08-23 Vlsi Technology, Inc. Self-aligned contacts with gate overlapped lightly doped drain (goldd) structure

Also Published As

Publication number Publication date
EP0656649B1 (de) 1998-09-02
DE69412974T2 (de) 1999-02-11
KR950021767A (ko) 1995-07-26
ES2120578T3 (es) 1998-11-01
EP0656649A1 (de) 1995-06-07
TW257885B (de) 1995-09-21
JPH07202200A (ja) 1995-08-04
JP2944902B2 (ja) 1999-09-06
US5407859A (en) 1995-04-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee