DE69120305D1 - Mosfet mit Substrat-Source-Kontakt - Google Patents

Mosfet mit Substrat-Source-Kontakt

Info

Publication number
DE69120305D1
DE69120305D1 DE69120305T DE69120305T DE69120305D1 DE 69120305 D1 DE69120305 D1 DE 69120305D1 DE 69120305 T DE69120305 T DE 69120305T DE 69120305 T DE69120305 T DE 69120305T DE 69120305 D1 DE69120305 D1 DE 69120305D1
Authority
DE
Germany
Prior art keywords
mosfet
substrate
source contact
source
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69120305T
Other languages
English (en)
Other versions
DE69120305T2 (de
Inventor
Robert J Johnsen
Paul W Sanders
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69120305D1 publication Critical patent/DE69120305D1/de
Publication of DE69120305T2 publication Critical patent/DE69120305T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/781—Inverted VDMOS transistors, i.e. Source-Down VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/168—V-Grooves
DE69120305T 1990-01-29 1991-01-28 Mosfet mit Substrat-Source-Kontakt Expired - Fee Related DE69120305T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/471,899 US5023196A (en) 1990-01-29 1990-01-29 Method for forming a MOSFET with substrate source contact

Publications (2)

Publication Number Publication Date
DE69120305D1 true DE69120305D1 (de) 1996-07-25
DE69120305T2 DE69120305T2 (de) 1997-01-30

Family

ID=23873428

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120305T Expired - Fee Related DE69120305T2 (de) 1990-01-29 1991-01-28 Mosfet mit Substrat-Source-Kontakt

Country Status (6)

Country Link
US (1) US5023196A (de)
EP (1) EP0440394B1 (de)
JP (1) JP3130323B2 (de)
KR (1) KR910014993A (de)
DE (1) DE69120305T2 (de)
SG (1) SG43147A1 (de)

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JPH04368182A (ja) * 1991-06-17 1992-12-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5134448A (en) * 1990-01-29 1992-07-28 Motorola, Inc. MOSFET with substrate source contact
US5366914A (en) * 1992-01-29 1994-11-22 Nec Corporation Vertical power MOSFET structure having reduced cell area
US5385853A (en) * 1992-12-02 1995-01-31 International Business Machines Corporation Method of fabricating a metal oxide semiconductor heterojunction field effect transistor (MOSHFET)
US5349224A (en) * 1993-06-30 1994-09-20 Purdue Research Foundation Integrable MOS and IGBT devices having trench gate structure
JPH07164238A (ja) * 1993-12-14 1995-06-27 Ikeda:Kk パイプカッター
US5471075A (en) * 1994-05-26 1995-11-28 North Carolina State University Dual-channel emitter switched thyristor with trench gate
US5488236A (en) * 1994-05-26 1996-01-30 North Carolina State University Latch-up resistant bipolar transistor with trench IGFET and buried collector
JPH0878533A (ja) * 1994-08-31 1996-03-22 Nec Corp 半導体装置及びその製造方法
US5904515A (en) * 1995-01-27 1999-05-18 Goldstar Electron Co., Ltd. Method for fabricating a thin film transistor with the source, drain and channel in a groove in a divided gate
JP3291958B2 (ja) * 1995-02-21 2002-06-17 富士電機株式会社 バックソースｍｏｓｆｅｔ
US5557127A (en) * 1995-03-23 1996-09-17 International Rectifier Corporation Termination structure for mosgated device with reduced mask count and process for its manufacture
US5592005A (en) * 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
DE19638438A1 (de) * 1996-09-19 1998-04-02 Siemens Ag Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement
DE19638439C2 (de) * 1996-09-19 2000-06-15 Siemens Ag Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement und Herstellungsverfahren
KR100218260B1 (ko) * 1997-01-14 1999-09-01 김덕중 트랜치 게이트형 모스트랜지스터의 제조방법
DE19801313C2 (de) * 1998-01-15 2001-01-18 Siemens Ag FET mit Source-Substratanschluß
US6084264A (en) * 1998-11-25 2000-07-04 Siliconix Incorporated Trench MOSFET having improved breakdown and on-resistance characteristics
DE10004984A1 (de) * 2000-02-04 2001-08-16 Infineon Technologies Ag Vertikales Halbleiterbauelement mit Source-Down-Design und entsprechendes Herstellungsverfahren
US6445037B1 (en) * 2000-09-28 2002-09-03 General Semiconductor, Inc. Trench DMOS transistor having lightly doped source structure
US6580107B2 (en) * 2000-10-10 2003-06-17 Sanyo Electric Co., Ltd. Compound semiconductor device with depletion layer stop region
US6627484B1 (en) * 2000-11-13 2003-09-30 Advanced Micro Devices, Inc. Method of forming a buried interconnect on a semiconductor on insulator wafer and a device including a buried interconnect
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US6777745B2 (en) * 2001-06-14 2004-08-17 General Semiconductor, Inc. Symmetric trench MOSFET device and method of making same
US7061066B2 (en) * 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7439580B2 (en) * 2004-09-02 2008-10-21 International Rectifier Corporation Top drain MOSgated device and process of manufacture therefor
DE102004045966B4 (de) 2004-09-22 2006-08-31 Infineon Technologies Austria Ag Vertikal-Feldeffekttransistor in Source-Down-Struktur
US7456470B2 (en) * 2004-10-01 2008-11-25 International Rectifier Corporation Top drain fet with integrated body short
DE112006000832B4 (de) 2005-04-06 2018-09-27 Fairchild Semiconductor Corporation Trenched-Gate-Feldeffekttransistoren und Verfahren zum Bilden derselben
CN101208803B (zh) * 2005-05-24 2012-05-30 维税-希力康克斯公司 沟槽金属氧化物半导体场效应晶体管
DE102005055838B4 (de) * 2005-11-23 2007-10-04 Infineon Technologies Ag Verfahren und Vorrichtung zum ermöglichen tiefliegender Halbleiterkontakte
US7768075B2 (en) * 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
US8471390B2 (en) 2006-05-12 2013-06-25 Vishay-Siliconix Power MOSFET contact metallization
US7319256B1 (en) * 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
JP2008078604A (ja) * 2006-08-24 2008-04-03 Rohm Co Ltd Ｍｉｓ型電界効果トランジスタおよびその製造方法
US10205017B2 (en) * 2009-06-17 2019-02-12 Alpha And Omega Semiconductor Incorporated Bottom source NMOS triggered Zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS)
JP5597963B2 (ja) * 2009-10-09 2014-10-01 富士電機株式会社 半導体装置
US20110198689A1 (en) * 2010-02-17 2011-08-18 Suku Kim Semiconductor devices containing trench mosfets with superjunctions
US9257517B2 (en) * 2010-11-23 2016-02-09 Microchip Technology Incorporated Vertical DMOS-field effect transistor
US8487371B2 (en) 2011-03-29 2013-07-16 Fairchild Semiconductor Corporation Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same
US8471331B2 (en) 2011-08-15 2013-06-25 Semiconductor Components Industries, Llc Method of making an insulated gate semiconductor device with source-substrate connection and structure
US8816503B2 (en) * 2011-08-29 2014-08-26 Infineon Technologies Austria Ag Semiconductor device with buried electrode

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US3975221A (en) * 1973-08-29 1976-08-17 American Micro-Systems, Inc. Low capacitance V groove MOS NOR gate and method of manufacture
US4398339A (en) * 1977-04-15 1983-08-16 Supertex, Inc. Fabrication method for high power MOS device
JPS605228B2 (ja) * 1977-10-17 1985-02-08 株式会社日立製作所 半導体装置
GB2034114A (en) * 1978-10-06 1980-05-29 Gen Electric Method of manufacturing a V- groove IGFET
DE2930780C2 (de) * 1979-07-28 1982-05-27 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines VMOS-Transistors
US4374455A (en) * 1979-10-30 1983-02-22 Rca Corporation Method for manufacturing a vertical, grooved MOSFET
JPS5683944A (en) * 1979-12-12 1981-07-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacturing of semiconductor device
FR2487583A1 (fr) * 1980-07-25 1982-01-29 Thomson Csf Procede de fabrication d'un transistor a effet de champ a rainure
US4738936A (en) * 1983-07-01 1988-04-19 Acrian, Inc. Method of fabrication lateral FET structure having a substrate to source contact
JPS60175457A (ja) * 1984-02-20 1985-09-09 Matsushita Electronics Corp 電界効果トランジスタの製造方法
JPH0654811B2 (ja) * 1984-02-29 1994-07-20 松下電子工業株式会社 電界効果トランジスタの製造方法
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JPS63288057A (ja) * 1987-05-20 1988-11-25 Sanyo Electric Co Ltd Ｃｍｏｓ半導体装置
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Also Published As

Publication number Publication date
US5023196A (en) 1991-06-11
SG43147A1 (en) 1997-10-17
EP0440394B1 (de) 1996-06-19
EP0440394A3 (en) 1992-01-29
KR910014993A (ko) 1991-08-31
DE69120305T2 (de) 1997-01-30
JPH04212469A (ja) 1992-08-04
JP3130323B2 (ja) 2001-01-31
EP0440394A2 (de) 1991-08-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC. (N.D.GES.D. STAATES

8339 Ceased/non-payment of the annual fee