SG43147A1 - Mosfet with substrate source contact - Google Patents
Mosfet with substrate source contactInfo
- Publication number
- SG43147A1 SG43147A1 SG1996004446A SG1996004446A SG43147A1 SG 43147 A1 SG43147 A1 SG 43147A1 SG 1996004446 A SG1996004446 A SG 1996004446A SG 1996004446 A SG1996004446 A SG 1996004446A SG 43147 A1 SG43147 A1 SG 43147A1
- Authority
- SG
- Singapore
- Prior art keywords
- mosfet
- source contact
- substrate source
- substrate
- contact
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/781—Inverted VDMOS transistors, i.e. Source-Down VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/168—V-Grooves
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/471,899 US5023196A (en) | 1990-01-29 | 1990-01-29 | Method for forming a MOSFET with substrate source contact |
Publications (1)
Publication Number | Publication Date |
---|---|
SG43147A1 true SG43147A1 (en) | 1997-10-17 |
Family
ID=23873428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1996004446A SG43147A1 (en) | 1990-01-29 | 1991-01-28 | Mosfet with substrate source contact |
Country Status (6)
Country | Link |
---|---|
US (1) | US5023196A (de) |
EP (1) | EP0440394B1 (de) |
JP (1) | JP3130323B2 (de) |
KR (1) | KR910014993A (de) |
DE (1) | DE69120305T2 (de) |
SG (1) | SG43147A1 (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04368182A (ja) * | 1991-06-17 | 1992-12-21 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5134448A (en) * | 1990-01-29 | 1992-07-28 | Motorola, Inc. | MOSFET with substrate source contact |
US5366914A (en) * | 1992-01-29 | 1994-11-22 | Nec Corporation | Vertical power MOSFET structure having reduced cell area |
US5385853A (en) * | 1992-12-02 | 1995-01-31 | International Business Machines Corporation | Method of fabricating a metal oxide semiconductor heterojunction field effect transistor (MOSHFET) |
US5349224A (en) * | 1993-06-30 | 1994-09-20 | Purdue Research Foundation | Integrable MOS and IGBT devices having trench gate structure |
JPH07164238A (ja) * | 1993-12-14 | 1995-06-27 | Ikeda:Kk | パイプカッター |
US5488236A (en) * | 1994-05-26 | 1996-01-30 | North Carolina State University | Latch-up resistant bipolar transistor with trench IGFET and buried collector |
US5471075A (en) * | 1994-05-26 | 1995-11-28 | North Carolina State University | Dual-channel emitter switched thyristor with trench gate |
JPH0878533A (ja) * | 1994-08-31 | 1996-03-22 | Nec Corp | 半導体装置及びその製造方法 |
US5904515A (en) * | 1995-01-27 | 1999-05-18 | Goldstar Electron Co., Ltd. | Method for fabricating a thin film transistor with the source, drain and channel in a groove in a divided gate |
JP3291958B2 (ja) * | 1995-02-21 | 2002-06-17 | 富士電機株式会社 | バックソースmosfet |
US5557127A (en) * | 1995-03-23 | 1996-09-17 | International Rectifier Corporation | Termination structure for mosgated device with reduced mask count and process for its manufacture |
US5592005A (en) * | 1995-03-31 | 1997-01-07 | Siliconix Incorporated | Punch-through field effect transistor |
DE19638439C2 (de) | 1996-09-19 | 2000-06-15 | Siemens Ag | Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement und Herstellungsverfahren |
DE19638438A1 (de) * | 1996-09-19 | 1998-04-02 | Siemens Ag | Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement |
KR100218260B1 (ko) * | 1997-01-14 | 1999-09-01 | 김덕중 | 트랜치 게이트형 모스트랜지스터의 제조방법 |
DE19801313C2 (de) * | 1998-01-15 | 2001-01-18 | Siemens Ag | FET mit Source-Substratanschluß |
US6084264A (en) * | 1998-11-25 | 2000-07-04 | Siliconix Incorporated | Trench MOSFET having improved breakdown and on-resistance characteristics |
DE10004984A1 (de) | 2000-02-04 | 2001-08-16 | Infineon Technologies Ag | Vertikales Halbleiterbauelement mit Source-Down-Design und entsprechendes Herstellungsverfahren |
US6445037B1 (en) * | 2000-09-28 | 2002-09-03 | General Semiconductor, Inc. | Trench DMOS transistor having lightly doped source structure |
US6580107B2 (en) * | 2000-10-10 | 2003-06-17 | Sanyo Electric Co., Ltd. | Compound semiconductor device with depletion layer stop region |
US6627484B1 (en) * | 2000-11-13 | 2003-09-30 | Advanced Micro Devices, Inc. | Method of forming a buried interconnect on a semiconductor on insulator wafer and a device including a buried interconnect |
US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
US6777745B2 (en) * | 2001-06-14 | 2004-08-17 | General Semiconductor, Inc. | Symmetric trench MOSFET device and method of making same |
US7061066B2 (en) * | 2001-10-17 | 2006-06-13 | Fairchild Semiconductor Corporation | Schottky diode using charge balance structure |
US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
US7439580B2 (en) * | 2004-09-02 | 2008-10-21 | International Rectifier Corporation | Top drain MOSgated device and process of manufacture therefor |
DE102004045966B4 (de) * | 2004-09-22 | 2006-08-31 | Infineon Technologies Austria Ag | Vertikal-Feldeffekttransistor in Source-Down-Struktur |
US7456470B2 (en) * | 2004-10-01 | 2008-11-25 | International Rectifier Corporation | Top drain fet with integrated body short |
JP2008536316A (ja) | 2005-04-06 | 2008-09-04 | フェアチャイルド・セミコンダクター・コーポレーション | トレンチゲート電界効果トランジスタおよびその形成方法 |
KR101047945B1 (ko) * | 2005-05-24 | 2011-07-12 | 비쉐이-실리코닉스 | 트렌치 금속 산화막 반도체 전계 효과 트랜지스터 |
DE102005055838B4 (de) * | 2005-11-23 | 2007-10-04 | Infineon Technologies Ag | Verfahren und Vorrichtung zum ermöglichen tiefliegender Halbleiterkontakte |
US7768075B2 (en) * | 2006-04-06 | 2010-08-03 | Fairchild Semiconductor Corporation | Semiconductor die packages using thin dies and metal substrates |
US8471390B2 (en) | 2006-05-12 | 2013-06-25 | Vishay-Siliconix | Power MOSFET contact metallization |
US7319256B1 (en) * | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
JP2008078604A (ja) * | 2006-08-24 | 2008-04-03 | Rohm Co Ltd | Mis型電界効果トランジスタおよびその製造方法 |
US10205017B2 (en) * | 2009-06-17 | 2019-02-12 | Alpha And Omega Semiconductor Incorporated | Bottom source NMOS triggered Zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS) |
JP5597963B2 (ja) * | 2009-10-09 | 2014-10-01 | 富士電機株式会社 | 半導体装置 |
US20110198689A1 (en) * | 2010-02-17 | 2011-08-18 | Suku Kim | Semiconductor devices containing trench mosfets with superjunctions |
US9257517B2 (en) * | 2010-11-23 | 2016-02-09 | Microchip Technology Incorporated | Vertical DMOS-field effect transistor |
US8487371B2 (en) | 2011-03-29 | 2013-07-16 | Fairchild Semiconductor Corporation | Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same |
US8471331B2 (en) | 2011-08-15 | 2013-06-25 | Semiconductor Components Industries, Llc | Method of making an insulated gate semiconductor device with source-substrate connection and structure |
US8816503B2 (en) | 2011-08-29 | 2014-08-26 | Infineon Technologies Austria Ag | Semiconductor device with buried electrode |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3975221A (en) * | 1973-08-29 | 1976-08-17 | American Micro-Systems, Inc. | Low capacitance V groove MOS NOR gate and method of manufacture |
US4398339A (en) * | 1977-04-15 | 1983-08-16 | Supertex, Inc. | Fabrication method for high power MOS device |
JPS605228B2 (ja) * | 1977-10-17 | 1985-02-08 | 株式会社日立製作所 | 半導体装置 |
GB2034114A (en) * | 1978-10-06 | 1980-05-29 | Gen Electric | Method of manufacturing a V- groove IGFET |
DE2930780C2 (de) * | 1979-07-28 | 1982-05-27 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zur Herstellung eines VMOS-Transistors |
US4374455A (en) * | 1979-10-30 | 1983-02-22 | Rca Corporation | Method for manufacturing a vertical, grooved MOSFET |
JPS5683944A (en) * | 1979-12-12 | 1981-07-08 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacturing of semiconductor device |
FR2487583A1 (fr) * | 1980-07-25 | 1982-01-29 | Thomson Csf | Procede de fabrication d'un transistor a effet de champ a rainure |
US4738936A (en) * | 1983-07-01 | 1988-04-19 | Acrian, Inc. | Method of fabrication lateral FET structure having a substrate to source contact |
JPS60175457A (ja) * | 1984-02-20 | 1985-09-09 | Matsushita Electronics Corp | 電界効果トランジスタの製造方法 |
JPH0654811B2 (ja) * | 1984-02-29 | 1994-07-20 | 松下電子工業株式会社 | 電界効果トランジスタの製造方法 |
JPS6126261A (ja) * | 1984-07-16 | 1986-02-05 | Nippon Telegr & Teleph Corp <Ntt> | 縦形mos電界効果トランジスタの製造方法 |
US4824793A (en) * | 1984-09-27 | 1989-04-25 | Texas Instruments Incorporated | Method of making DRAM cell with trench capacitor |
US4797373A (en) * | 1984-10-31 | 1989-01-10 | Texas Instruments Incorporated | Method of making dRAM cell with trench capacitor |
US4694561A (en) * | 1984-11-30 | 1987-09-22 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of making high-performance trench capacitors for DRAM cells |
US4713678A (en) * | 1984-12-07 | 1987-12-15 | Texas Instruments Incorporated | dRAM cell and method |
JPS61170068A (ja) * | 1985-01-23 | 1986-07-31 | Nec Ic Microcomput Syst Ltd | Mosトランジスタ |
JPS62159468A (ja) * | 1986-01-08 | 1987-07-15 | Tdk Corp | 半導体装置 |
US4767722A (en) * | 1986-03-24 | 1988-08-30 | Siliconix Incorporated | Method for making planar vertical channel DMOS structures |
JPS63288057A (ja) * | 1987-05-20 | 1988-11-25 | Sanyo Electric Co Ltd | Cmos半導体装置 |
US4859621A (en) * | 1988-02-01 | 1989-08-22 | General Instrument Corp. | Method for setting the threshold voltage of a vertical power MOSFET |
-
1990
- 1990-01-29 US US07/471,899 patent/US5023196A/en not_active Expired - Fee Related
- 1990-12-26 KR KR1019900021726A patent/KR910014993A/ko not_active Application Discontinuation
-
1991
- 1991-01-25 JP JP03025457A patent/JP3130323B2/ja not_active Expired - Fee Related
- 1991-01-28 EP EP91300622A patent/EP0440394B1/de not_active Expired - Lifetime
- 1991-01-28 DE DE69120305T patent/DE69120305T2/de not_active Expired - Fee Related
- 1991-01-28 SG SG1996004446A patent/SG43147A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
JP3130323B2 (ja) | 2001-01-31 |
DE69120305D1 (de) | 1996-07-25 |
EP0440394A2 (de) | 1991-08-07 |
US5023196A (en) | 1991-06-11 |
EP0440394B1 (de) | 1996-06-19 |
DE69120305T2 (de) | 1997-01-30 |
EP0440394A3 (en) | 1992-01-29 |
KR910014993A (ko) | 1991-08-31 |
JPH04212469A (ja) | 1992-08-04 |
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