DE69417798D1 - Lateraler MOSFET mit Kontaktstruktur - Google Patents

Lateraler MOSFET mit Kontaktstruktur

Info

Publication number
DE69417798D1
DE69417798D1 DE69417798T DE69417798T DE69417798D1 DE 69417798 D1 DE69417798 D1 DE 69417798D1 DE 69417798 T DE69417798 T DE 69417798T DE 69417798 T DE69417798 T DE 69417798T DE 69417798 D1 DE69417798 D1 DE 69417798D1
Authority
DE
Germany
Prior art keywords
contact structure
lateral mosfet
mosfet
lateral
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69417798T
Other languages
English (en)
Other versions
DE69417798T2 (de
Inventor
Richard K Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Application granted granted Critical
Publication of DE69417798D1 publication Critical patent/DE69417798D1/de
Publication of DE69417798T2 publication Critical patent/DE69417798T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69417798T 1993-05-14 1994-05-12 Lateraler MOSFET mit Kontaktstruktur Expired - Fee Related DE69417798T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/062,507 US5412239A (en) 1993-05-14 1993-05-14 Contact geometry for improved lateral MOSFET

Publications (2)

Publication Number Publication Date
DE69417798D1 true DE69417798D1 (de) 1999-05-20
DE69417798T2 DE69417798T2 (de) 1999-08-26

Family

ID=22042930

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69417798T Expired - Fee Related DE69417798T2 (de) 1993-05-14 1994-05-12 Lateraler MOSFET mit Kontaktstruktur

Country Status (4)

Country Link
US (1) US5412239A (de)
EP (1) EP0624909B1 (de)
JP (2) JP3943604B2 (de)
DE (1) DE69417798T2 (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
US5517046A (en) * 1993-11-19 1996-05-14 Micrel, Incorporated High voltage lateral DMOS device with enhanced drift region
JP3355817B2 (ja) * 1994-10-20 2002-12-09 株式会社デンソー 半導体装置
US5767546A (en) * 1994-12-30 1998-06-16 Siliconix Incorporated Laternal power mosfet having metal strap layer to reduce distributed resistance
JP3570052B2 (ja) * 1995-01-19 2004-09-29 セイコーエプソン株式会社 半導体メモリ装置及びその製造方法
JP2997179B2 (ja) * 1995-01-27 2000-01-11 モトローラ株式会社 パワーｍｏｓトランジスタ
EP0766309A3 (de) * 1995-08-28 1998-04-29 Texas Instruments Incorporated Feldeffekttransistor mit mehrschichtiger Metallisierung und integrierter Schaltung dafür
KR100356826B1 (ko) 1997-05-29 2004-05-17 주식회사 하이닉스반도체 반도체장치 및 그의 제조방법
US6274896B1 (en) 2000-01-14 2001-08-14 Lexmark International, Inc. Drive transistor with fold gate
JP3412599B2 (ja) 2000-04-19 2003-06-03 株式会社デンソー 半導体装置
US7109558B2 (en) 2001-06-06 2006-09-19 Denso Corporation Power MOS transistor having capability for setting substrate potential independently of source potential
US7941675B2 (en) 2002-12-31 2011-05-10 Burr James B Adaptive power control
JP4232584B2 (ja) * 2002-10-15 2009-03-04 株式会社デンソー 半導体装置
JP4396200B2 (ja) * 2002-10-30 2010-01-13 株式会社デンソー 半導体装置
US6969909B2 (en) * 2002-12-20 2005-11-29 Vlt, Inc. Flip chip FET device
US7038917B2 (en) * 2002-12-27 2006-05-02 Vlt, Inc. Low loss, high density array interconnection
US7228242B2 (en) 2002-12-31 2007-06-05 Transmeta Corporation Adaptive power control based on pre package characterization of integrated circuits
US7323367B1 (en) 2002-12-31 2008-01-29 Transmeta Corporation Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions
US6936898B2 (en) * 2002-12-31 2005-08-30 Transmeta Corporation Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions
US7174528B1 (en) 2003-10-10 2007-02-06 Transmeta Corporation Method and apparatus for optimizing body bias connections in CMOS circuits using a deep n-well grid structure
US7012461B1 (en) 2003-12-23 2006-03-14 Transmeta Corporation Stabilization component for a substrate potential regulation circuit
US7129771B1 (en) 2003-12-23 2006-10-31 Transmeta Corporation Servo loop for well bias voltage source
US7692477B1 (en) 2003-12-23 2010-04-06 Tien-Min Chen Precise control component for a substrate potential regulation circuit
US7649402B1 (en) 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
US7645673B1 (en) 2004-02-03 2010-01-12 Michael Pelham Method for generating a deep N-well pattern for an integrated circuit design
US7388260B1 (en) 2004-03-31 2008-06-17 Transmeta Corporation Structure for spanning gap in body-bias voltage routing structure
JP2005311131A (ja) * 2004-04-22 2005-11-04 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US7185302B1 (en) * 2004-06-01 2007-02-27 Polar Semiconductor, Inc. Method for generating layouts by chamfering corners of polygons
US7562233B1 (en) 2004-06-22 2009-07-14 Transmeta Corporation Adaptive control of operating and body bias voltages
US7774625B1 (en) 2004-06-22 2010-08-10 Eric Chien-Li Sheng Adaptive voltage control by accessing information stored within and specific to a microprocessor
US7598573B2 (en) 2004-11-16 2009-10-06 Robert Paul Masleid Systems and methods for voltage distribution via multiple epitaxial layers
JP4372046B2 (ja) 2005-05-18 2009-11-25 株式会社東芝 半導体装置
US7305647B1 (en) 2005-07-28 2007-12-04 Transmeta Corporation Using standard pattern tiles and custom pattern tiles to generate a semiconductor design layout having a deep well structure for routing body-bias voltage
JP5066928B2 (ja) * 2007-02-08 2012-11-07 株式会社デンソー 半導体装置
US7595523B2 (en) 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US9059282B2 (en) * 2007-12-03 2015-06-16 Infineon Technologies Ag Semiconductor devices having transistors along different orientations
US9024327B2 (en) 2007-12-14 2015-05-05 Cree, Inc. Metallization structure for high power microelectronic devices
US8169081B1 (en) 2007-12-27 2012-05-01 Volterra Semiconductor Corporation Conductive routings in integrated circuits using under bump metallization
US20090302479A1 (en) * 2008-06-06 2009-12-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Semiconductor structures having vias
US8836029B2 (en) * 2012-02-29 2014-09-16 Smsc Holdings S.A.R.L. Transistor with minimized resistance
WO2013147751A1 (en) * 2012-03-27 2013-10-03 Intel Corporation A transceiver with an integrated rx/tx configurable passive network
US20130320522A1 (en) * 2012-05-30 2013-12-05 Taiwan Semiconductor Manufacturing Company, Ltd. Re-distribution Layer Via Structure and Method of Making Same
US9331154B2 (en) * 2013-08-21 2016-05-03 Epistar Corporation High electron mobility transistor
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
JP2015170607A (ja) * 2014-03-04 2015-09-28 株式会社デンソー岩手 横型ｍｏｓｆｅｔ
US20220067259A1 (en) * 2020-08-31 2022-03-03 Taiwan Semiconductor Manufacturing Company Ltd. Structure and method of non-rectangular cell in semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165585A (de) * 1974-12-04 1976-06-07 Hitachi Ltd
US4148047A (en) * 1978-01-16 1979-04-03 Honeywell Inc. Semiconductor apparatus
US4196443A (en) * 1978-08-25 1980-04-01 Rca Corporation Buried contact configuration for CMOS/SOS integrated circuits
JPS6053085A (ja) * 1983-09-02 1985-03-26 Hitachi Ltd 接合形電界効果トランジスタ
US4636825A (en) * 1985-10-04 1987-01-13 Fairchild Semiconductor Corporation Distributed field effect transistor structure
IT1213027B (it) * 1986-01-24 1989-12-07 Sgs Microelettrica Spa Densita'.!circuito integrato a semiconduttore, in particolare del tipo comprendente dispositivi ad alta tensione e dispositivi di elaborazione di segnale ad alta
JPH07112064B2 (ja) * 1986-02-10 1995-11-29 株式会社東芝 絶縁ゲート電界効果型トランジスタ
US4951101A (en) * 1988-08-25 1990-08-21 Micrel Incorporated Diamond shorting contact for semiconductors
JPH02268467A (ja) * 1989-04-10 1990-11-02 New Japan Radio Co Ltd 半導体集積回路
JPH03239369A (ja) * 1990-02-16 1991-10-24 Nissan Motor Co Ltd 半導体装置
JPH04109677A (ja) * 1990-08-29 1992-04-10 Seiko Instr Inc Ｍｏｓトランジスター
EP0487022B1 (de) * 1990-11-23 1997-04-23 Texas Instruments Incorporated Verfahren zum gleichzeitigen Herstellen eines Feldeffekttransistors mit isoliertem Gate und eines Bipolartransistors
EP0566262A2 (de) * 1992-04-15 1993-10-20 National Semiconductor Corporation Feldeffekttransistor mit einer Sourceelektrode, die den Kontakt einer tiefen P-Zone aufnimmt
JP3248251B2 (ja) * 1992-07-31 2002-01-21 松下電器産業株式会社 アルミニウム電解コンデンサ用電極箔の製造方法

Also Published As

Publication number Publication date
JP2007096341A (ja) 2007-04-12
JPH07142729A (ja) 1995-06-02
EP0624909B1 (de) 1999-04-14
EP0624909A3 (de) 1995-09-20
JP4597945B2 (ja) 2010-12-15
DE69417798T2 (de) 1999-08-26
US5412239A (en) 1995-05-02
EP0624909A2 (de) 1994-11-17
JP3943604B2 (ja) 2007-07-11

Similar Documents

Publication Publication Date Title
DE69417798T2 (de) Lateraler MOSFET mit Kontaktstruktur
DE69120305D1 (de) Mosfet mit Substrat-Source-Kontakt
DE69430630D1 (de) Sportschuh mit verbesserter sohle
DE59401995D1 (de) Elektrodenvorrichtung
DE69311442T2 (de) Kontaktanordnung
DE69324238D1 (de) Elektrode
DE69305909D1 (de) Leistungsanordnung mit isoliertem Gate-Kontakt-Gebiet
DE69416557T2 (de) Elektrodenvorrichtung
DE69411066D1 (de) Elektrodenvorrichtung
DE69404923T2 (de) Fassung mit verbessertem Kontaktelement
NO924621D0 (no) Roertraktor
DE59402002D1 (de) Schalter mit Zusatzvorrichtung
DE59407823D1 (de) Kontaktelement
DE69324681T2 (de) Entproteinisierung mit azlacton-gekoppelten funktionsträgern
DE69407451D1 (de) Sterilisator mit verminderter Oberflächenverschmutzung
DE69412974D1 (de) Feldeffekttransistor mit Kontaktflächen
DE9316725U1 (de) Kontaktvorrichtung
KR950016368U (ko) 지압 효과가 좋은 센들
DE9304980U1 (de) Kontaktierung
DE59506090D1 (de) Schaltvorrichtung mit Kontaktierung
BR9304752A (pt) Contato múltiplo
DE9314602U1 (de) Kontaktscheibe
BR9300909A (pt) Conexao rapida com contato
NO930487D0 (no) Roeranordning
FI1039U1 (fi) Foerbindningsstycke foer korrugerade roer

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee