JP4597945B2 - ラテラルmosfet - Google Patents
ラテラルmosfet Download PDFInfo
- Publication number
- JP4597945B2 JP4597945B2 JP2006319878A JP2006319878A JP4597945B2 JP 4597945 B2 JP4597945 B2 JP 4597945B2 JP 2006319878 A JP2006319878 A JP 2006319878A JP 2006319878 A JP2006319878 A JP 2006319878A JP 4597945 B2 JP4597945 B2 JP 4597945B2
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- metal
- source
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- 239000002184 metal Substances 0.000 claims description 144
- 210000000746 body region Anatomy 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
21 P基層
22 金属接続部
22A 金属接続部
23 ポリシリコン層
24 ゲート酸化層
25 熱酸化膜
26 厚い酸化膜
30 金属ライン
30A 金属ライン30を表す破線
50 ゲート層
51 金属ライン
52 金属接続部
80 ゲート層
80S 開口部
80D 開口部
81〜83 金属ライン
90 第1の金属層
91 第2の金属層
92 絶縁層
93 通路
100 対角線的な金属ライン
101、102 垂直な金属接続ライン
103 ソースセル及びドレインセルと
104 通路
Claims (3)
- ラテラルMOSFETであって、
行及び列方向に交互に配列された複数のソース及びドレインセル(103)と、
前記ソース及びドレインセル(103)の上に、絶縁層を介して該セルと分離されて配置される第1のソース及びドレイン金属ラインを含む第1の複数の金属ライン(100)であって、前記第1のソース金属ラインと前記第1のドレイン金属ラインとが交互に配列され、前記第1のソース金属ラインが前記ソースセルとの金属接続部を有し、前記第1のドレイン金属ラインが前記ドレインセルとの金属接続部を有する、該第1の複数の金属ライン(100)と、
前記第1の複数の金属ラインの上に、絶縁層を介して該第1の複数の金属ラインと分離されて配置される第2のソース金属ライン(101)及びドレイン金属ライン(102)を含む第2の複数の金属ラインであって、前記第1のソース金属ライン及び前記第1のドレイン金属ラインに対して斜めに延在する、該第2の複数の金属ラインと、
前記第1の複数の金属ラインと前記第2の複数の金属ラインの間の前記絶縁層を貫通して延在し、前記第1のソース金属ラインと前記第2のソース金属ライン、前記第1のドレイン金属ラインと前記第2のドレイン金属ラインをそれぞれ接続する複数の通路(104)とを含み、
前記通路(104)と、前記第1の複数の金属ラインとソースセルまたはドレインセル(103)との金属接続部とが交互に配置され、
前記複数の通路(104)のそれぞれが、行及び列方向に配列された前記複数のソース及びドレインセルの各行の間に位置する一定の幅を有する仮想的な行ラインと、各列の間に位置する一定の幅を有する仮想的な列ラインとの交差によって画定される、行及び列方向に配列された複数の仮想的な矩形のいずれかの内部に位置し、
前記複数の通路の少なくともいくつかにおいて、前記通路の水平断面の形状が、その通路が位置している前記仮想的な矩形において、その対向する2つの隅を、該矩形の上に延在する前記第1の複数の金属ライン(100)の両エッジから内向きにそれぞれ所定の距離間隔を保持する1対の線によって斜めに切除した形状であることを特徴とするラテラルMOSFET。 - 前記通路の前記水平断面の形状が平行四辺形からなることを特徴とする請求項1に記載のラテラルMOSFET。
- 前記通路の前記水平断面の形状が六角形からなることを特徴とする請求項1に記載のラテラルMOSFET。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/062,507 US5412239A (en) | 1993-05-14 | 1993-05-14 | Contact geometry for improved lateral MOSFET |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12419994A Division JP3943604B2 (ja) | 1993-05-14 | 1994-05-13 | ラテラルmosfet |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007096341A JP2007096341A (ja) | 2007-04-12 |
JP4597945B2 true JP4597945B2 (ja) | 2010-12-15 |
Family
ID=22042930
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12419994A Expired - Lifetime JP3943604B2 (ja) | 1993-05-14 | 1994-05-13 | ラテラルmosfet |
JP2006319878A Expired - Lifetime JP4597945B2 (ja) | 1993-05-14 | 2006-11-28 | ラテラルmosfet |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12419994A Expired - Lifetime JP3943604B2 (ja) | 1993-05-14 | 1994-05-13 | ラテラルmosfet |
Country Status (4)
Country | Link |
---|---|
US (1) | US5412239A (ja) |
EP (1) | EP0624909B1 (ja) |
JP (2) | JP3943604B2 (ja) |
DE (1) | DE69417798T2 (ja) |
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1993
- 1993-05-14 US US08/062,507 patent/US5412239A/en not_active Expired - Lifetime
-
1994
- 1994-05-12 EP EP94303417A patent/EP0624909B1/en not_active Expired - Lifetime
- 1994-05-12 DE DE69417798T patent/DE69417798T2/de not_active Expired - Fee Related
- 1994-05-13 JP JP12419994A patent/JP3943604B2/ja not_active Expired - Lifetime
-
2006
- 2006-11-28 JP JP2006319878A patent/JP4597945B2/ja not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6053085A (ja) * | 1983-09-02 | 1985-03-26 | Hitachi Ltd | 接合形電界効果トランジスタ |
JPS6286763A (ja) * | 1985-10-04 | 1987-04-21 | フエアチヤイルド セミコンダクタコ−ポレ−シヨン | 分布電界効果トランジスタ構成体 |
JPH02268467A (ja) * | 1989-04-10 | 1990-11-02 | New Japan Radio Co Ltd | 半導体集積回路 |
JPH03239369A (ja) * | 1990-02-16 | 1991-10-24 | Nissan Motor Co Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH07142729A (ja) | 1995-06-02 |
EP0624909B1 (en) | 1999-04-14 |
JP3943604B2 (ja) | 2007-07-11 |
EP0624909A3 (en) | 1995-09-20 |
DE69417798T2 (de) | 1999-08-26 |
JP2007096341A (ja) | 2007-04-12 |
US5412239A (en) | 1995-05-02 |
EP0624909A2 (en) | 1994-11-17 |
DE69417798D1 (de) | 1999-05-20 |
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