DE69418091D1 - Feldeffekttransistor mit einem Schottkygate - Google Patents

Feldeffekttransistor mit einem Schottkygate

Info

Publication number
DE69418091D1
DE69418091D1 DE69418091T DE69418091T DE69418091D1 DE 69418091 D1 DE69418091 D1 DE 69418091D1 DE 69418091 T DE69418091 T DE 69418091T DE 69418091 T DE69418091 T DE 69418091T DE 69418091 D1 DE69418091 D1 DE 69418091D1
Authority
DE
Germany
Prior art keywords
schottkygate
field effect
effect transistor
transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69418091T
Other languages
English (en)
Other versions
DE69418091T2 (de
Inventor
Hironobu C O Nec Corp Miyamato
Kazuhiko C O Nec Corporat Onda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69418091D1 publication Critical patent/DE69418091D1/de
Application granted granted Critical
Publication of DE69418091T2 publication Critical patent/DE69418091T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
DE69418091T 1993-06-01 1994-06-01 Feldeffekttransistor mit einem Schottkygate Expired - Fee Related DE69418091T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5130481A JP2550859B2 (ja) 1993-06-01 1993-06-01 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
DE69418091D1 true DE69418091D1 (de) 1999-06-02
DE69418091T2 DE69418091T2 (de) 1999-11-25

Family

ID=15035291

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69418091T Expired - Fee Related DE69418091T2 (de) 1993-06-01 1994-06-01 Feldeffekttransistor mit einem Schottkygate

Country Status (4)

Country Link
US (1) US5635735A (de)
EP (1) EP0627768B1 (de)
JP (1) JP2550859B2 (de)
DE (1) DE69418091T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3463776B2 (ja) * 1995-06-22 2003-11-05 シャープ株式会社 ヘテロ接合半導体デバイス
US6196385B1 (en) * 1995-07-17 2001-03-06 Techtonic Corporation Golf club locking device
JP3272259B2 (ja) * 1997-03-25 2002-04-08 株式会社東芝 半導体装置
TW468229B (en) * 1998-08-05 2001-12-11 Nat Science Council High barrier gate field effect transistor structure
US6452221B1 (en) * 2000-09-21 2002-09-17 Trw Inc. Enhancement mode device
TWI288435B (en) * 2000-11-21 2007-10-11 Matsushita Electric Ind Co Ltd Semiconductor device and equipment for communication system
US9412836B2 (en) * 2014-03-06 2016-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Contacts for transistors
RU2578517C1 (ru) * 2014-10-28 2016-03-27 Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") Способ изготовления высокочастотного транзистора с нанометровыми затворами
JP7094082B2 (ja) * 2017-06-14 2022-07-01 日本ルメンタム株式会社 光半導体素子、光サブアセンブリ、及び光モジュール

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56124273A (en) * 1980-03-04 1981-09-29 Semiconductor Res Found Semiconductor device
JPS6441272A (en) * 1987-08-07 1989-02-13 Nec Corp Field effect transistor
JPH084140B2 (ja) * 1987-08-07 1996-01-17 日本電気株式会社 電界効果トランジスタ
JPH01207920A (ja) * 1988-02-16 1989-08-21 Oki Electric Ind Co Ltd ＩｎＰ半導体薄膜の製造方法
JPH02130933A (ja) * 1988-11-11 1990-05-18 Nec Corp 電界効果トランジスタ
US5038187A (en) * 1989-12-01 1991-08-06 Hewlett-Packard Company Pseudomorphic MODFET structure having improved linear power performance at microwave frequencies
EP0452054B1 (de) * 1990-04-11 1995-07-12 Hughes Aircraft Company HEMT-Struktur mit passivierter Struktur
JP2964637B2 (ja) * 1990-11-30 1999-10-18 日本電気株式会社 電界効果トランジスタ
JPH04271129A (ja) * 1991-02-27 1992-09-28 Sanyo Electric Co Ltd ヘテロ接合電界効果トランジスタ
FR2679071B1 (fr) * 1991-07-08 1997-04-11 France Telecom Transistor a effet de champ, a couches minces de bande d'energie controlee.
US5508535A (en) * 1992-01-09 1996-04-16 Mitsubishi Denki Kabushiki Kaisha Compound semiconductor devices

Also Published As

Publication number Publication date
JP2550859B2 (ja) 1996-11-06
EP0627768B1 (de) 1999-04-28
EP0627768A2 (de) 1994-12-07
US5635735A (en) 1997-06-03
DE69418091T2 (de) 1999-11-25
EP0627768A3 (de) 1995-06-07
JPH06342812A (ja) 1994-12-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee