DE69324871T2 - Hochspannungs-MIS-Feldeffektransistor und integrierte Halbleiterschaltung - Google Patents

Hochspannungs-MIS-Feldeffektransistor und integrierte Halbleiterschaltung

Info

Publication number
DE69324871T2
DE69324871T2 DE69324871T DE69324871T DE69324871T2 DE 69324871 T2 DE69324871 T2 DE 69324871T2 DE 69324871 T DE69324871 T DE 69324871T DE 69324871 T DE69324871 T DE 69324871T DE 69324871 T2 DE69324871 T2 DE 69324871T2
Authority
DE
Germany
Prior art keywords
integrated circuit
high voltage
field effect
effect transistor
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69324871T
Other languages
English (en)
Other versions
DE69324871D1 (de
Inventor
Akio Kitamura
Naoto Fujishima
Gen Tada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE69324871D1 publication Critical patent/DE69324871D1/de
Application granted granted Critical
Publication of DE69324871T2 publication Critical patent/DE69324871T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69324871T 1992-08-17 1993-08-12 Hochspannungs-MIS-Feldeffektransistor und integrierte Halbleiterschaltung Expired - Fee Related DE69324871T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21770592 1992-08-17
JP30992092A JP3158738B2 (ja) 1992-08-17 1992-11-19 高耐圧ｍｉｓ電界効果トランジスタおよび半導体集積回路

Publications (2)

Publication Number Publication Date
DE69324871D1 DE69324871D1 (de) 1999-06-17
DE69324871T2 true DE69324871T2 (de) 1999-09-09

Family

ID=26522170

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69324871T Expired - Fee Related DE69324871T2 (de) 1992-08-17 1993-08-12 Hochspannungs-MIS-Feldeffektransistor und integrierte Halbleiterschaltung
DE69331915T Expired - Fee Related DE69331915T2 (de) 1992-08-17 1993-08-12 MIS-Feldeffekttransistor mit hoher Spannungsfestigkeit und integrierte Halbleiterschaltung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69331915T Expired - Fee Related DE69331915T2 (de) 1992-08-17 1993-08-12 MIS-Feldeffekttransistor mit hoher Spannungsfestigkeit und integrierte Halbleiterschaltung

Country Status (4)

Country Link
US (1) US5432370A (de)
EP (2) EP0805499B1 (de)
JP (1) JP3158738B2 (de)
DE (2) DE69324871T2 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3186405B2 (ja) * 1994-03-08 2001-07-11 富士電機株式会社 横型ｍｏｓｆｅｔ
US5801420A (en) * 1994-09-08 1998-09-01 Fuji Electric Co. Ltd. Lateral semiconductor arrangement for power ICS
JP4775357B2 (ja) * 1995-04-12 2011-09-21 富士電機株式会社 高耐圧ｉｃ
JP4013785B2 (ja) * 1995-04-12 2007-11-28 富士電機デバイステクノロジー株式会社 高耐圧ｉｃ
US5777362A (en) * 1995-06-07 1998-07-07 Harris Corporation High efficiency quasi-vertical DMOS in CMOS or BICMOS process
US5700727A (en) * 1995-07-24 1997-12-23 Micron Technology, Inc. Method of forming a thin film transistor
EP0757389B1 (de) * 1995-07-31 2001-09-26 STMicroelectronics S.r.l. Hochspannungstreiberschaltung für induktive Lasten
US6133607A (en) * 1997-05-22 2000-10-17 Kabushiki Kaisha Toshiba Semiconductor device
JP3270405B2 (ja) * 1998-01-26 2002-04-02 セイコーインスツルメンツ株式会社 半導体装置
GB9826291D0 (en) * 1998-12-02 1999-01-20 Koninkl Philips Electronics Nv Field-effect semi-conductor devices
DE69832258T2 (de) 1998-02-24 2006-08-03 Stmicroelectronics S.R.L., Agrate Brianza Schutzstruktur für integrierte elektronische Hochspannungsanordnungen
JP4508304B2 (ja) * 1998-11-26 2010-07-21 三洋電機株式会社 半導体集積回路装置
WO2000035020A1 (de) * 1998-12-07 2000-06-15 Infineon Technologies Ag Laterales hochvolt-halbleiterbaulement mit reduziertem spezifischem einschaltwiderstand
JP4797225B2 (ja) * 1999-05-27 2011-10-19 富士電機株式会社 半導体装置
JP2001015741A (ja) 1999-06-30 2001-01-19 Toshiba Corp 電界効果トランジスタ
JP2001094094A (ja) * 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法
JP2001102569A (ja) * 1999-09-28 2001-04-13 Fuji Electric Co Ltd 半導体デバイス
JP2001274390A (ja) 2000-01-18 2001-10-05 Fuji Electric Co Ltd 高耐圧デバイスおよびその製造方法、不純物拡散領域の形成方法
JP2001298183A (ja) * 2000-04-13 2001-10-26 Mitsubishi Electric Corp 半導体装置
US6525390B2 (en) 2000-05-18 2003-02-25 Fuji Electric Co., Ltd. MIS semiconductor device with low on resistance and high breakdown voltage
EP1340262A2 (de) * 2000-11-27 2003-09-03 Koninklijke Philips Electronics N.V. Rom aus mehreren sicherungen mit auf mos anordnung basiernder zellstruktur und lese- und schreibverfahren dafür
US6424007B1 (en) * 2001-01-24 2002-07-23 Power Integrations, Inc. High-voltage transistor with buried conduction layer
JP2002353441A (ja) * 2001-05-22 2002-12-06 Denso Corp パワーｍｏｓトランジスタ
US6662091B2 (en) * 2001-06-29 2003-12-09 Battelle Memorial Institute Diagnostics/prognostics using wireless links
US6889165B2 (en) 2001-07-02 2005-05-03 Battelle Memorial Institute Application specific intelligent microsensors
US6555883B1 (en) 2001-10-29 2003-04-29 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US7109562B2 (en) * 2005-02-07 2006-09-19 Leadtrend Technology Corp. High voltage laterally double-diffused metal oxide semiconductor
JP4857610B2 (ja) * 2005-06-01 2012-01-18 株式会社日立製作所 高圧アナログ・スイッチｉｃおよびそれを使った超音波診断装置
US8598659B2 (en) * 2005-10-26 2013-12-03 Hewlett-Packard Development Company, L.P. Single finger gate transistor
JP5070693B2 (ja) * 2005-11-11 2012-11-14 サンケン電気株式会社 半導体装置
JP5132077B2 (ja) * 2006-04-18 2013-01-30 オンセミコンダクター・トレーディング・リミテッド 半導体装置
US7595523B2 (en) 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
JP5104878B2 (ja) * 2007-12-14 2012-12-19 富士電機株式会社 集積回路および半導体装置
JP2009259972A (ja) * 2008-04-15 2009-11-05 Panasonic Corp 半導体装置、及び該半導体装置を用いたエネルギー伝達装置
JP2010177268A (ja) * 2009-01-27 2010-08-12 Asahi Kasei Electronics Co Ltd 接合型ｆｅｔ、半導体装置およびその製造方法
JP5124533B2 (ja) * 2009-06-30 2013-01-23 株式会社日立製作所 半導体装置、それを用いたプラズマディスプレイ駆動用半導体集積回路装置、及びプラズマディスプレイ装置
US20120175679A1 (en) * 2011-01-10 2012-07-12 Fabio Alessio Marino Single structure cascode device
US8847278B2 (en) 2011-01-17 2014-09-30 Fuji Electric Co., Ltd. Semiconductor device comprising a breakdown withstanding section
US9209098B2 (en) 2011-05-19 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. HVMOS reliability evaluation using bulk resistances as indices
JP6028402B2 (ja) * 2012-06-07 2016-11-16 富士電機株式会社 半導体装置およびその製造方法
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
CN107403837A (zh) * 2016-05-20 2017-11-28 北大方正集团有限公司 一种横向双扩散金属氧化物半导体结构
CN106449768B (zh) * 2016-11-25 2019-06-21 东莞市联洲知识产权运营管理有限公司 一种jfet管
US10937872B1 (en) * 2019-08-07 2021-03-02 Vanguard International Semiconductor Corporation Semiconductor structures

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2310453C3 (de) * 1973-03-02 1981-11-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines gegen Überspannungen geschützten Halbleiterbauelementes
JPS56103463A (en) * 1980-01-21 1981-08-18 Nippon Denso Co Ltd Semiconductor device of high withstand voltage planar type
JPS57160159A (en) * 1981-03-28 1982-10-02 Toshiba Corp High breakdown voltage planar type semiconductor device
US4609929A (en) * 1984-12-21 1986-09-02 North American Philips Corporation Conductivity-enhanced combined lateral MOS/bipolar transistor
JPS6380569A (ja) * 1986-09-24 1988-04-11 Fuji Electric Co Ltd 伝導度変調型横型ｍｏｓ−ｆｅｔ
JPS63172468A (ja) * 1987-01-12 1988-07-16 Toshiba Corp 入力保護回路
US5237186A (en) * 1987-02-26 1993-08-17 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
US5105243A (en) * 1987-02-26 1992-04-14 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
JPS63219667A (ja) * 1987-03-10 1988-09-13 三菱電機株式会社 植毛方法
US4811075A (en) * 1987-04-24 1989-03-07 Power Integrations, Inc. High voltage MOS transistors
US5023678A (en) * 1987-05-27 1991-06-11 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
FR2616966B1 (fr) * 1987-06-22 1989-10-27 Thomson Semiconducteurs Structure de transistors mos de puissance
JP2679074B2 (ja) * 1988-01-27 1997-11-19 富士電機株式会社 電界効果トランジスタ
JPH01264262A (ja) * 1988-04-15 1989-10-20 Toshiba Corp Ｍｏｓ型電界効果トランジスタ
JP2645100B2 (ja) * 1988-09-07 1997-08-25 株式会社東芝 電界効果型半導体装置
US5034790A (en) * 1989-05-23 1991-07-23 U.S. Philips Corp. MOS transistor with semi-insulating field plate and surface-adjoining top layer
JP2513874B2 (ja) * 1989-12-28 1996-07-03 三菱電機株式会社 半導体装置およびその製造方法
US5258641A (en) * 1989-12-28 1993-11-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same
JP2597412B2 (ja) * 1990-03-20 1997-04-09 三菱電機株式会社 半導体装置およびその製造方法
JPH04304658A (ja) * 1991-04-02 1992-10-28 Fuji Electric Co Ltd 高耐圧半導体装置及びその製造方法

Also Published As

Publication number Publication date
US5432370A (en) 1995-07-11
EP0588067A3 (de) 1994-04-20
EP0588067A2 (de) 1994-03-23
EP0805499A2 (de) 1997-11-05
DE69324871D1 (de) 1999-06-17
EP0805499A3 (de) 1997-11-26
EP0805499B1 (de) 2002-05-08
JPH06120510A (ja) 1994-04-28
JP3158738B2 (ja) 2001-04-23
DE69331915D1 (de) 2002-06-13
DE69331915T2 (de) 2002-09-05
EP0588067B1 (de) 1999-05-12

Similar Documents

Publication Publication Date Title
DE69324871D1 (de) Hochspannungs-MIS-Feldeffektransistor und integrierte Halbleiterschaltung
DE69329093T2 (de) Hochspannungs-MIS-Transistor und Halbleiteranordnung
DE69319549T2 (de) Spannungsgesteuerte Halbleiteranordnung
KR960008848A (ko) 반도체 기억장치 및 고전압 절환회로
DE69404500D1 (de) Hochspannungs-MOS-Transistor mit ausgedehntem Drain
DE3682388D1 (de) Feldeffekttransistor verwendender schaltkreis und spannungsregler.
DE69616013D1 (de) Halbleiteranordnung vom hochspannungs-ldmos-typ
DE69228278D1 (de) MOS-Feldeffekttransistor
FI860222A (fi) Puolijohdekomponentti sisältäen korkeajännite-MOS kanavatransistoreita ja matalajännite-MOS kanavatransistoreita
DE69231115D1 (de) Feldeffekttransistor und diesen Transistor enthaltende Hochfrequenzschaltungen
DE69809623T2 (de) Logische MOS-Schaltung und Halbleitervorrichtung
DE69431196D1 (de) Hochspannungs-MIS-Feldeffekttransistor
DE69330542D1 (de) Halbleitertransistor
DE69216728T2 (de) Hochstabile statische Speichereinrichtung mit Metalloxid-Halbleiter-Feldeffekttransistoren
EP0523967A3 (en) Transistor arrangement for forming basic cell of master-slice type semiconductor integrated circuit device and master-slice type semiconductor integrated circuit device
DE69815289D1 (de) Spannungsreglerschaltungen und halbleiterschaltung
DE69328396T2 (de) Integrierte Halbleiterschaltung und diese verwendende IC-Karte
EP0513639A3 (en) Semiconductor field effect transistor device and fabrication thereof
DE69131541D1 (de) Halbleiterbauelement mit vergrösserter elektrostatischer Durchbruchspannung
DE69626704D1 (de) Halbleiterhochspannungskurzschlussschaltung
DE69333124D1 (de) Halbleiteranordnung und Schaltung
DE69027463T2 (de) MOS-Feldeffekttransistor mit hoher Durchbruchsspannung
GB2284931B (en) Semiconductor arrangement for influencing the breakdown voltage of transistors
DE59308468D1 (de) Halbleiterbauelement mit hoher Durchbruchsspannung
IT8947593A0 (it) Circuito integrato comprendente transistor ad effetto di campo logici e di potenza

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee