DE69310559D1 - Schaltungs-Halbleiterbauteil mit Gate - Google Patents

Schaltungs-Halbleiterbauteil mit Gate

Info

Publication number
DE69310559D1
DE69310559D1 DE69310559T DE69310559T DE69310559D1 DE 69310559 D1 DE69310559 D1 DE 69310559D1 DE 69310559 T DE69310559 T DE 69310559T DE 69310559 T DE69310559 T DE 69310559T DE 69310559 D1 DE69310559 D1 DE 69310559D1
Authority
DE
Germany
Prior art keywords
gate
semiconductor device
circuit semiconductor
circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69310559T
Other languages
English (en)
Other versions
DE69310559T2 (de
Inventor
Ken Ya C O Fuji Electr Sakurai
Masahito C O Fuji Elect Otsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE69310559D1 publication Critical patent/DE69310559D1/de
Application granted granted Critical
Publication of DE69310559T2 publication Critical patent/DE69310559T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
DE1993610559 1992-02-03 1993-02-02 Schaltungs-Halbleiterbauteil mit Gate Expired - Fee Related DE69310559T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1757592 1992-02-03

Publications (2)

Publication Number Publication Date
DE69310559D1 true DE69310559D1 (de) 1997-06-19
DE69310559T2 DE69310559T2 (de) 1997-10-09

Family

ID=11947714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1993610559 Expired - Fee Related DE69310559T2 (de) 1992-02-03 1993-02-02 Schaltungs-Halbleiterbauteil mit Gate

Country Status (2)

Country Link
EP (1) EP0555047B1 (de)
DE (1) DE69310559T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5498884A (en) * 1994-06-24 1996-03-12 International Rectifier Corporation MOS-controlled thyristor with current saturation characteristics
US5444272A (en) * 1994-07-28 1995-08-22 International Rectifier Corporation Three-terminal thyristor with single MOS-gate controlled characteristics
US5705835A (en) * 1994-11-25 1998-01-06 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing the same
GB9610098D0 (en) * 1996-05-15 1996-07-17 Palmer Patrick R Insulated gate bipolar transistor control
CN108054207A (zh) * 2017-12-11 2018-05-18 电子科技大学 一种双沟道mos栅控晶闸管及其制造方法
JP7293749B2 (ja) * 2019-03-14 2023-06-20 富士電機株式会社 炭化珪素半導体装置の選別方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5014102A (en) * 1982-04-01 1991-05-07 General Electric Company MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
US4604638A (en) * 1983-05-17 1986-08-05 Kabushiki Kaisha Toshiba Five layer semiconductor device with separate insulated turn-on and turn-off gates
EP0159663A3 (de) * 1984-04-26 1987-09-23 General Electric Company Thyristoren, Feldeffekttransistoren mit isoliertem Gate und MOSFETs hoher Dichte gesteuert durch eine in einer V-Nut angebrachte MOS-Struktur und Verfahren zur Herstellung
ATE93654T1 (de) * 1988-04-22 1993-09-15 Asea Brown Boveri Abschaltbares leistungshalbleiterbauelement.
US4958211A (en) * 1988-09-01 1990-09-18 General Electric Company MCT providing turn-off control of arbitrarily large currents
JPH03253078A (ja) * 1989-12-21 1991-11-12 Asea Brown Boveri Ag 遮断可能なパワー半導体素子
DE59107276D1 (de) * 1990-09-25 1996-02-29 Siemens Ag Abschaltbarer Thyristor
DE4100444A1 (de) * 1991-01-09 1992-07-16 Fraunhofer Ges Forschung Integrierte leistungsschalterstruktur

Also Published As

Publication number Publication date
EP0555047A3 (en) 1993-10-13
DE69310559T2 (de) 1997-10-09
EP0555047A2 (de) 1993-08-11
EP0555047B1 (de) 1997-05-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee