KR950701143A - 더블 게이트를 갖는 반도체소자(semiconductor devices with a double gate) - Google Patents

더블 게이트를 갖는 반도체소자(semiconductor devices with a double gate)

Info

Publication number
KR950701143A
KR950701143A KR1019940703636A KR19940703636A KR950701143A KR 950701143 A KR950701143 A KR 950701143A KR 1019940703636 A KR1019940703636 A KR 1019940703636A KR 19940703636 A KR19940703636 A KR 19940703636A KR 950701143 A KR950701143 A KR 950701143A
Authority
KR
South Korea
Prior art keywords
double gate
semiconductor device
semiconductor devices
semiconductor
devices
Prior art date
Application number
KR1019940703636A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR950701143A publication Critical patent/KR950701143A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
KR1019940703636A 1992-04-15 1994-10-13 더블 게이트를 갖는 반도체소자(semiconductor devices with a double gate) KR950701143A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB929208324A GB9208324D0 (en) 1992-04-15 1992-04-15 Semiconductor devices
PCT/GB1993/000792 WO1993021659A1 (en) 1992-04-15 1993-04-15 Semiconductor devices with a double gate

Publications (1)

Publication Number Publication Date
KR950701143A true KR950701143A (ko) 1995-02-20

Family

ID=10714100

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940703636A KR950701143A (ko) 1992-04-15 1994-10-13 더블 게이트를 갖는 반도체소자(semiconductor devices with a double gate)

Country Status (7)

Country Link
US (1) US5677550A (ko)
EP (1) EP0646289B1 (ko)
JP (1) JPH07505742A (ko)
KR (1) KR950701143A (ko)
DE (1) DE69317562T2 (ko)
GB (1) GB9208324D0 (ko)
WO (1) WO1993021659A1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3254007B2 (ja) 1992-06-09 2002-02-04 株式会社半導体エネルギー研究所 薄膜状半導体装置およびその作製方法
JP4076648B2 (ja) 1998-12-18 2008-04-16 株式会社半導体エネルギー研究所 半導体装置
JP4008133B2 (ja) 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置
JP4202502B2 (ja) 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
US7633471B2 (en) * 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
US7019342B2 (en) 2003-07-03 2006-03-28 American Semiconductor, Inc. Double-gated transistor circuit
US6919647B2 (en) * 2003-07-03 2005-07-19 American Semiconductor, Inc. SRAM cell
US7015547B2 (en) * 2003-07-03 2006-03-21 American Semiconductor, Inc. Multi-configurable independently multi-gated MOSFET
US7250347B2 (en) * 2005-01-28 2007-07-31 International Business Machines Corporation Double-gate FETs (Field Effect Transistors)
KR101490112B1 (ko) * 2008-03-28 2015-02-05 삼성전자주식회사 인버터 및 그를 포함하는 논리회로
JP2010066331A (ja) * 2008-09-09 2010-03-25 Fujifilm Corp 表示装置
KR101623958B1 (ko) * 2008-10-01 2016-05-25 삼성전자주식회사 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로
KR101259727B1 (ko) 2008-10-24 2013-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040073A (en) * 1975-08-29 1977-08-02 Westinghouse Electric Corporation Thin film transistor and display panel using the transistor
JPS5433679A (en) * 1977-08-22 1979-03-12 Agency Of Ind Science & Technol Semiconductor intergrated circuit on insulation substrate
GB1601059A (en) * 1978-05-31 1981-10-21 Secr Defence Fet devices and their fabrication
JPS57180177A (en) * 1981-04-30 1982-11-06 Toshiba Corp Semiconductor device
GB8721193D0 (en) * 1987-09-09 1987-10-14 Wright S W Semiconductor devices
US4963860A (en) * 1988-02-01 1990-10-16 General Electric Company Integrated matrix display circuitry
WO1990006595A1 (en) * 1988-12-09 1990-06-14 Hughes Aircraft Company Ultrathin submicron mosfet with intrinsic channel
US5053347A (en) * 1989-08-03 1991-10-01 Industrial Technology Research Institute Amorphous silicon thin film transistor with a depletion gate

Also Published As

Publication number Publication date
DE69317562D1 (de) 1998-04-23
WO1993021659A1 (en) 1993-10-28
JPH07505742A (ja) 1995-06-22
DE69317562T2 (de) 1998-07-09
US5677550A (en) 1997-10-14
GB9208324D0 (en) 1992-06-03
EP0646289B1 (en) 1998-03-18
EP0646289A1 (en) 1995-04-05

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application