DE69313499T2 - Halbleiterbauelement mit Bufferstruktur - Google Patents

Halbleiterbauelement mit Bufferstruktur

Info

Publication number
DE69313499T2
DE69313499T2 DE69313499T DE69313499T DE69313499T2 DE 69313499 T2 DE69313499 T2 DE 69313499T2 DE 69313499 T DE69313499 T DE 69313499T DE 69313499 T DE69313499 T DE 69313499T DE 69313499 T2 DE69313499 T2 DE 69313499T2
Authority
DE
Germany
Prior art keywords
semiconductor device
buffer structure
buffer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69313499T
Other languages
English (en)
Other versions
DE69313499D1 (de
Inventor
Kimihiro Muraoka
Takashiga Tamamushi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
Tamamushi Takashige
Toyo Electric Manufacturing Ltd
Toyo Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4114140A external-priority patent/JPH0793426B2/ja
Priority claimed from JP4144887A external-priority patent/JPH0793427B2/ja
Application filed by Tamamushi Takashige, Toyo Electric Manufacturing Ltd, Toyo Electric Manufacturing Co Ltd filed Critical Tamamushi Takashige
Application granted granted Critical
Publication of DE69313499D1 publication Critical patent/DE69313499D1/de
Publication of DE69313499T2 publication Critical patent/DE69313499T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69313499T 1992-04-07 1993-04-07 Halbleiterbauelement mit Bufferstruktur Expired - Fee Related DE69313499T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4114140A JPH0793426B2 (ja) 1992-04-07 1992-04-07 静電誘導バッファ構造を有する半導体素子
JP4144887A JPH0793427B2 (ja) 1992-05-11 1992-05-11 ドリフトバッファ構造を有する半導体素子

Publications (2)

Publication Number Publication Date
DE69313499D1 DE69313499D1 (de) 1997-10-09
DE69313499T2 true DE69313499T2 (de) 1998-01-08

Family

ID=26452969

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69313499T Expired - Fee Related DE69313499T2 (de) 1992-04-07 1993-04-07 Halbleiterbauelement mit Bufferstruktur

Country Status (3)

Country Link
US (1) US5352910A (de)
EP (2) EP0565350B1 (de)
DE (1) DE69313499T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0665597A1 (de) * 1994-01-27 1995-08-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe IGBT und Herstellungsverfahren dafür
DE59808468D1 (en) * 1997-01-31 2003-06-26 Infineon Technologies Ag Asymmetrischer thyristor
DE19823944A1 (de) 1998-05-28 1999-12-02 Siemens Ag Leistungsdioden-Struktur
KR100351042B1 (ko) * 2000-04-04 2002-09-05 페어차일드코리아반도체 주식회사 역방향 차폐 모드에서도 높은 브레이크다운 전압을 갖는절연 게이트 바이폴라 트랜지스터 및 그 제조방법
JP3906076B2 (ja) * 2001-01-31 2007-04-18 株式会社東芝 半導体装置
DE10325721B4 (de) * 2003-06-06 2009-02-05 Infineon Technologies Ag Halbleiterbauelement
US7301220B2 (en) * 2005-05-20 2007-11-27 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
CN102468330A (zh) * 2010-11-09 2012-05-23 杭州汉安半导体有限公司 一种短路点新型布局的快速晶闸管
JP2013168564A (ja) 2012-02-16 2013-08-29 Ngk Insulators Ltd 半導体装置及びその製造方法
US9461116B2 (en) * 2012-12-06 2016-10-04 Institute of Microelectronics, Chinese Academy of Sciences Method of formation of a TI-IGBT
JP6362152B1 (ja) * 2016-11-11 2018-07-25 新電元工業株式会社 Ｍｏｓｆｅｔ及び電力変換回路
CN113451387B (zh) * 2020-03-24 2022-12-23 清华大学 用于过压击穿功能的缓冲区变掺杂结构及半导体器件

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4053924A (en) * 1975-02-07 1977-10-11 California Linear Circuits, Inc. Ion-implanted semiconductor abrupt junction
US4086611A (en) * 1975-10-20 1978-04-25 Semiconductor Research Foundation Static induction type thyristor
US4171995A (en) * 1975-10-20 1979-10-23 Semiconductor Research Foundation Epitaxial deposition process for producing an electrostatic induction type thyristor
JPS5931869B2 (ja) 1976-05-06 1984-08-04 三菱電機株式会社 静電誘導形サイリスタ
US4985738A (en) * 1978-01-06 1991-01-15 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
JPS6011815B2 (ja) * 1979-07-09 1985-03-28 三菱電機株式会社 サイリスタ
JPS5927571A (ja) * 1982-08-05 1984-02-14 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
JPS5993169A (ja) * 1982-11-17 1984-05-29 三洋電機株式会社 透視構造体の組立方法
JPS59193169A (ja) * 1983-04-15 1984-11-01 Toyota Motor Corp ドライ型塗装ブ−ス
US4654679A (en) * 1983-10-05 1987-03-31 Toyo Denki Seizo Kabushiki Kaisha Static induction thyristor with stepped-doping gate region
JPS60189260A (ja) * 1984-03-09 1985-09-26 Toshiba Corp 逆阻止型ゲートターンオフサイリスタ
JPH0691244B2 (ja) * 1984-04-27 1994-11-14 三菱電機株式会社 ゲートターンオフサイリスタの製造方法
JP2632322B2 (ja) * 1987-10-02 1997-07-23 財団法人 半導体研究振興会 電力用半導体素子
JPH0642542B2 (ja) * 1988-04-08 1994-06-01 株式会社東芝 高耐圧半導体装置の製造方法
FR2638892B1 (fr) * 1988-11-09 1992-12-24 Sgs Thomson Microelectronics Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede
JP2729309B2 (ja) * 1988-12-05 1998-03-18 三菱電機株式会社 半導体装置の製造方法
DE59003052D1 (de) * 1989-05-18 1993-11-18 Asea Brown Boveri Halbleiterbauelement.

Also Published As

Publication number Publication date
EP0771034A2 (de) 1997-05-02
EP0565350A3 (de) 1994-12-28
EP0565350B1 (de) 1997-09-03
EP0565350A2 (de) 1993-10-13
US5352910A (en) 1994-10-04
DE69313499D1 (de) 1997-10-09
EP0771034A3 (de) 1997-05-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NGK INSULATORS, LTD., NAGOYA, AICHI, JP TAMAMUSHI,

8339 Ceased/non-payment of the annual fee