IT1402879B1 - Dispositivo igbt con regioni di emettitore sepolte - Google Patents
Dispositivo igbt con regioni di emettitore sepolteInfo
- Publication number
- IT1402879B1 IT1402879B1 ITMI2010A002146A ITMI20102146A IT1402879B1 IT 1402879 B1 IT1402879 B1 IT 1402879B1 IT MI2010A002146 A ITMI2010A002146 A IT MI2010A002146A IT MI20102146 A ITMI20102146 A IT MI20102146A IT 1402879 B1 IT1402879 B1 IT 1402879B1
- Authority
- IT
- Italy
- Prior art keywords
- regulations
- igbt device
- emitters
- buried
- buried emitters
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ITMI2010A002146A IT1402879B1 (it) | 2010-11-19 | 2010-11-19 | Dispositivo igbt con regioni di emettitore sepolte |
| US13/300,010 US8878594B2 (en) | 2010-11-19 | 2011-11-18 | IGBT device with buried emitter regions |
| EP11189781.5A EP2455972B1 (en) | 2010-11-19 | 2011-11-18 | IGBT device with buried emitter regions |
| US14/496,937 US9196714B2 (en) | 2010-11-19 | 2014-09-25 | IGBT device with buried emitter regions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ITMI2010A002146A IT1402879B1 (it) | 2010-11-19 | 2010-11-19 | Dispositivo igbt con regioni di emettitore sepolte |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ITMI20102146A1 ITMI20102146A1 (it) | 2012-05-20 |
| IT1402879B1 true IT1402879B1 (it) | 2013-09-27 |
Family
ID=43742759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ITMI2010A002146A IT1402879B1 (it) | 2010-11-19 | 2010-11-19 | Dispositivo igbt con regioni di emettitore sepolte |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US8878594B2 (it) |
| EP (1) | EP2455972B1 (it) |
| IT (1) | IT1402879B1 (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9041096B2 (en) * | 2013-04-16 | 2015-05-26 | Rohm Co., Ltd. | Superjunction semiconductor device and manufacturing method therefor |
| US9520492B2 (en) * | 2015-02-18 | 2016-12-13 | Macronix International Co., Ltd. | Semiconductor device having buried layer |
| US10063048B2 (en) * | 2015-12-30 | 2018-08-28 | Silicon Laboratories Inc. | Dynamic trigger voltage control for an ESD protection device |
| DE102016015475B3 (de) * | 2016-12-28 | 2018-01-11 | 3-5 Power Electronics GmbH | IGBT Halbleiterstruktur |
| US11728422B2 (en) * | 2019-11-14 | 2023-08-15 | Stmicroelectronics S.R.L. | Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof |
| IT202000015076A1 (it) | 2020-06-23 | 2021-12-23 | St Microelectronics Srl | Dispositivo elettronico in 4h-sic con prestazioni di corto circuito migliorate, e relativo metodo di fabbricazione |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4303841A (en) * | 1979-05-21 | 1981-12-01 | Exxon Research & Engineering Co. | VMOS/Bipolar power switch |
| US4395723A (en) * | 1980-05-27 | 1983-07-26 | Eliyahou Harari | Floating substrate dynamic RAM cell with lower punch-through means |
| US4782379A (en) * | 1981-11-23 | 1988-11-01 | General Electric Company | Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device |
| JPS61180472A (ja) * | 1985-02-05 | 1986-08-13 | Mitsubishi Electric Corp | 半導体装置 |
| JP2579928B2 (ja) * | 1987-02-26 | 1997-02-12 | 株式会社東芝 | 半導体素子およびその製造方法 |
| US5198688A (en) * | 1989-03-06 | 1993-03-30 | Fuji Electric Co., Ltd. | Semiconductor device provided with a conductivity modulation MISFET |
| US5055721A (en) * | 1989-04-13 | 1991-10-08 | Mitsubishi Denki Kabushiki Kaisha | Drive circuit for igbt device |
| JPH0548111A (ja) * | 1991-08-12 | 1993-02-26 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP3203814B2 (ja) * | 1992-10-19 | 2001-08-27 | 富士電機株式会社 | 半導体装置 |
| JP3163850B2 (ja) * | 1993-03-23 | 2001-05-08 | 富士電機株式会社 | 半導体装置 |
| US5548133A (en) * | 1994-09-19 | 1996-08-20 | International Rectifier Corporation | IGBT with increased ruggedness |
| US5538908A (en) * | 1995-04-27 | 1996-07-23 | Lg Semicon Co., Ltd. | Method for manufacturing a BiCMOS semiconductor device |
| US6448587B1 (en) * | 1997-11-28 | 2002-09-10 | Hitachi, Ltd. | Circuit incorporated IGBT and power conversion device using the same |
| US6275093B1 (en) * | 1998-02-25 | 2001-08-14 | Intersil Corporation | IGBT gate drive circuit with short circuit protection |
| US6242967B1 (en) * | 1998-06-15 | 2001-06-05 | Fuji Electric Co., Ltd. | Low on resistance high speed off switching device having unipolar transistors |
| JP3817380B2 (ja) * | 1999-01-14 | 2006-09-06 | ローム株式会社 | 絶縁ゲート型半導体装置 |
| DE102006001252B4 (de) * | 2006-01-10 | 2012-01-26 | Infineon Technologies Ag | Bipolares Leistungshalbleiterbauelement mit einem p-Emitter und höher dotierten Zonen in dem p-Emitter und Herstellungsverfahren |
| US7687891B2 (en) * | 2007-05-14 | 2010-03-30 | Infineon Technologies Ag | Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type |
| JP5423377B2 (ja) * | 2009-12-15 | 2014-02-19 | 三菱電機株式会社 | イグナイタ用電力半導体装置 |
-
2010
- 2010-11-19 IT ITMI2010A002146A patent/IT1402879B1/it active
-
2011
- 2011-11-18 EP EP11189781.5A patent/EP2455972B1/en not_active Not-in-force
- 2011-11-18 US US13/300,010 patent/US8878594B2/en not_active Expired - Fee Related
-
2014
- 2014-09-25 US US14/496,937 patent/US9196714B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2455972B1 (en) | 2015-03-25 |
| US20150048414A1 (en) | 2015-02-19 |
| EP2455972A1 (en) | 2012-05-23 |
| ITMI20102146A1 (it) | 2012-05-20 |
| US9196714B2 (en) | 2015-11-24 |
| US20120126880A1 (en) | 2012-05-24 |
| US8878594B2 (en) | 2014-11-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CO7020913A2 (es) | Inhibidores de pde9 con estructura básica de imidazotriazinona | |
| DK2544738T3 (da) | Injektionsanordning | |
| BR112012022323A2 (pt) | dispositivo de iluminação | |
| BR112012033589A2 (pt) | dispositivo de iluminação | |
| BR112012033478A2 (pt) | dispositivo médico | |
| DE112011103755A5 (de) | Abzugvorrichtung | |
| ES1073154Y (es) | Estructura de dispositivo de iluminacion | |
| DK2613888T3 (da) | Doseringsanordning | |
| IT1402879B1 (it) | Dispositivo igbt con regioni di emettitore sepolte | |
| FI20105906A0 (fi) | Laite | |
| DK2447459T3 (da) | Isolator | |
| BR112012030878A2 (pt) | dispositivo | |
| ES1074271Y (es) | Dispositivo de union de sillas en hilera | |
| DK2402077T3 (da) | Isolatorenhed | |
| ES1075366Y (es) | Jeringuilla hipodermica con sistema de fuelle | |
| DE102011007240A8 (de) | Fahrzeugnavigationsvorrichtung | |
| IT1401974B1 (it) | Dispositivo illuminante | |
| FI20105903A0 (fi) | Laite | |
| DK2365242T3 (da) | Belysningsindretning | |
| ITMI20112078A1 (it) | Dispositivo di navigazione | |
| IT1402832B1 (it) | Dispositivo reggispinta | |
| ES1073149Y (es) | Dispositivo avisador | |
| FI20105907A0 (fi) | Laite | |
| FI20105902A0 (fi) | Laite | |
| ES1074553Y (es) | Dispositivo convertidor de farolas |