DE69320033T2 - Monolitisch integrierte Struktur eines vertikalen Bipolar- und eines vertikalen MOSFET-Transistors - Google Patents

Monolitisch integrierte Struktur eines vertikalen Bipolar- und eines vertikalen MOSFET-Transistors

Info

Publication number
DE69320033T2
DE69320033T2 DE69320033T DE69320033T DE69320033T2 DE 69320033 T2 DE69320033 T2 DE 69320033T2 DE 69320033 T DE69320033 T DE 69320033T DE 69320033 T DE69320033 T DE 69320033T DE 69320033 T2 DE69320033 T2 DE 69320033T2
Authority
DE
Germany
Prior art keywords
vertical
integrated structure
monolithically integrated
mosfet transistor
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69320033T
Other languages
English (en)
Other versions
DE69320033D1 (de
Inventor
Sergio Palara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Application granted granted Critical
Publication of DE69320033D1 publication Critical patent/DE69320033D1/de
Publication of DE69320033T2 publication Critical patent/DE69320033T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69320033T 1993-06-10 1993-06-10 Monolitisch integrierte Struktur eines vertikalen Bipolar- und eines vertikalen MOSFET-Transistors Expired - Fee Related DE69320033T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830255A EP0629001B1 (de) 1993-06-10 1993-06-10 Monolitisch integrierte Struktur eines vertikalen Bipolar- und eines vertikalen MOSFET-Transistors

Publications (2)

Publication Number Publication Date
DE69320033D1 DE69320033D1 (de) 1998-09-03
DE69320033T2 true DE69320033T2 (de) 1998-12-03

Family

ID=8215180

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69320033T Expired - Fee Related DE69320033T2 (de) 1993-06-10 1993-06-10 Monolitisch integrierte Struktur eines vertikalen Bipolar- und eines vertikalen MOSFET-Transistors

Country Status (4)

Country Link
US (1) US5525826A (de)
EP (1) EP0629001B1 (de)
JP (1) JPH07142621A (de)
DE (1) DE69320033T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204717B1 (en) * 1995-05-22 2001-03-20 Hitachi, Ltd. Semiconductor circuit and semiconductor device for use in equipment such as a power converting apparatus
EP0763895B1 (de) * 1995-09-14 2003-11-12 Infineon Technologies AG Schaltungsanordnung und Halbleiterkörper mit einem Leistungsschalter
KR100200352B1 (ko) * 1995-12-30 1999-06-15 윤종용 반도체 장치의 보호 소자
EP0809293B1 (de) * 1996-05-21 2001-08-29 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Leistungshalbleiterstruktur mit einem durch den Vertikaltransistor gesteuerten Lateraltransistor
DE69731181D1 (de) * 1997-02-19 2004-11-18 St Microelectronics Srl Schutzvorrichtung gegen Überspannungen zum Schützen eines einen MOS-Steueranschluss aufweisenden Leistungstransistors
EP0878848A1 (de) * 1997-05-16 1998-11-18 STMicroelectronics S.r.l. Vertikaler Leistungsbipolartransistor mit ineinandergreifender Geometrie und mit Optimierung der Basis-Emitter-Potentialdifferenz
DE19730759C1 (de) * 1997-07-17 1998-09-03 Siemens Ag Vertikaler Leistungs-MOSFET
IT1309699B1 (it) * 1999-02-18 2002-01-30 St Microelectronics Srl Dispositivo con transistore bipolare e transistore mosfet integratiin configurazione emitter switching
US7927703B2 (en) * 2003-04-11 2011-04-19 3M Innovative Properties Company Adhesive blends, articles, and methods
EP1791181B1 (de) * 2005-11-25 2010-02-03 STMicroelectronics S.r.l. Transistorstruktur mit hoher Eingangsimpedanz und hohem Stromvermögen und zugehöriges Herstellungsverfahren
DE102007024355B4 (de) * 2007-05-24 2011-04-21 Infineon Technologies Ag Verfahren zum Herstellen einer Schutzstruktur
JP6034150B2 (ja) * 2012-11-16 2016-11-30 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9306034B2 (en) 2014-02-24 2016-04-05 Vanguard International Semiconductor Corporation Method and apparatus for power device with multiple doped regions
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base
US9935628B2 (en) * 2015-11-10 2018-04-03 Analog Devices Global FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination
JP2018207058A (ja) * 2017-06-09 2018-12-27 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128269A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
US4402003A (en) * 1981-01-12 1983-08-30 Supertex, Inc. Composite MOS/bipolar power device
GB2128018A (en) * 1982-09-22 1984-04-18 Philips Electronic Associated Insulated-gate field-effect transistors
US4783694A (en) * 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain
EP0176753A1 (de) * 1984-09-27 1986-04-09 Siemens Aktiengesellschaft Darlington-Schaltung mit einem Feldeffekttransistor und einen bipolaren Ausgangstransistor
JP2845869B2 (ja) * 1985-03-25 1999-01-13 株式会社日立製作所 半導体集積回路装置
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione

Also Published As

Publication number Publication date
US5525826A (en) 1996-06-11
EP0629001B1 (de) 1998-07-29
JPH07142621A (ja) 1995-06-02
EP0629001A1 (de) 1994-12-14
DE69320033D1 (de) 1998-09-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee