KR970700372A - 바이폴라 트랜지스터의 베이스 형성시의 경사 주입 사용법(use of oblique implantation in forming base of bipolar transistor) - Google Patents

바이폴라 트랜지스터의 베이스 형성시의 경사 주입 사용법(use of oblique implantation in forming base of bipolar transistor)

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Publication number
KR970700372A
KR970700372A KR1019960703650A KR19960703650A KR970700372A KR 970700372 A KR970700372 A KR 970700372A KR 1019960703650 A KR1019960703650 A KR 1019960703650A KR 19960703650 A KR19960703650 A KR 19960703650A KR 970700372 A KR970700372 A KR 970700372A
Authority
KR
South Korea
Prior art keywords
bipolar transistor
forming base
oblique implantation
implantation
oblique
Prior art date
Application number
KR1019960703650A
Other languages
English (en)
Other versions
KR100349729B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970700372A publication Critical patent/KR970700372A/ko
Application granted granted Critical
Publication of KR100349729B1 publication Critical patent/KR100349729B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
KR1019960703650A 1994-10-07 1995-10-12 바이폴라트랜지스터의베이스형성시의경사주입사용법 KR100349729B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/320,144 US5605849A (en) 1994-10-07 1994-10-07 Use of oblique implantation in forming base of bipolar transistor
US08/320,144 1994-11-07

Publications (2)

Publication Number Publication Date
KR970700372A true KR970700372A (ko) 1997-01-08
KR100349729B1 KR100349729B1 (ko) 2003-01-15

Family

ID=23245068

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960703650A KR100349729B1 (ko) 1994-10-07 1995-10-12 바이폴라트랜지스터의베이스형성시의경사주입사용법

Country Status (4)

Country Link
US (2) US5605849A (ko)
EP (1) EP0797840B1 (ko)
KR (1) KR100349729B1 (ko)
WO (1) WO1996015549A2 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5605849A (en) * 1994-10-07 1997-02-25 National Semiconductor Corporation Use of oblique implantation in forming base of bipolar transistor
US5719082A (en) * 1995-08-25 1998-02-17 Micron Technology, Inc. Angled implant to improve high current operation of bipolar transistors
US7199447B2 (en) * 1995-08-25 2007-04-03 Micron Technology, Inc. Angled implant to improve high current operation of bipolar transistors
US5945726A (en) * 1996-12-16 1999-08-31 Micron Technology, Inc. Lateral bipolar transistor
US6001701A (en) * 1997-06-09 1999-12-14 Lucent Technologies Inc. Process for making bipolar having graded or modulated collector
US6130122A (en) * 1997-07-21 2000-10-10 Texas Instruments Incorporated Method for forming a BiCMOS integrated circuit with Nwell compensation implant and method
IT1301729B1 (it) * 1998-06-16 2000-07-07 St Microelectronics Srl Processo per il drogaggio selettivo di una fetta di materialesemiconduttore mediante impiantazione ionica.
US6225662B1 (en) 1998-07-28 2001-05-01 Philips Semiconductors, Inc. Semiconductor structure with heavily doped buried breakdown region
US6043130A (en) * 1999-05-17 2000-03-28 National Semiconductor Corporation Process for forming bipolar transistor compatible with CMOS utilizing tilted ion implanted base
US6262472B1 (en) 1999-05-17 2001-07-17 National Semiconductor Corporation Bipolar transistor compatible with CMOS utilizing tilted ion implanted base
US6271553B1 (en) * 1999-11-29 2001-08-07 United Microelectronics Corp. Photo sensor in a photo diode
KR100496551B1 (ko) * 2002-11-20 2005-06-22 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US6815301B2 (en) * 2003-03-24 2004-11-09 Matsushita Electric Industrial Co., Ltd. Method for fabricating bipolar transistor
US7365361B2 (en) * 2003-07-23 2008-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4540320B2 (ja) * 2003-09-19 2010-09-08 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
JP4812480B2 (ja) * 2006-03-22 2011-11-09 富士通セミコンダクター株式会社 半導体装置の製造方法
KR100770538B1 (ko) 2006-08-09 2007-10-25 동부일렉트로닉스 주식회사 횡형 디모스 트랜지스터의 제조방법
US10437241B2 (en) 2016-12-16 2019-10-08 General Electric Company Systems and methods for generating maintenance packages

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3595716A (en) * 1968-05-16 1971-07-27 Philips Corp Method of manufacturing semiconductor devices
JPS57149770A (en) * 1981-03-11 1982-09-16 Mitsubishi Electric Corp Manufacture of semiconductor device
US4771012A (en) * 1986-06-13 1988-09-13 Matsushita Electric Industrial Co., Ltd. Method of making symmetrically controlled implanted regions using rotational angle of the substrate
JPS6482561A (en) * 1987-09-24 1989-03-28 Mitsubishi Electric Corp Manufacture of bipolar type semiconductor device
US5270226A (en) * 1989-04-03 1993-12-14 Matsushita Electric Industrial Co., Ltd. Manufacturing method for LDDFETS using oblique ion implantion technique
US5183768A (en) * 1989-04-04 1993-02-02 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor device by forming doped regions that limit width of the base
JP2570487B2 (ja) * 1990-10-03 1997-01-08 三菱電機株式会社 半導体装置の製造方法
JP3104271B2 (ja) * 1991-03-27 2000-10-30 松下電器産業株式会社 イオン注入を用いた半導体装置の製造方法
JPH0541385A (ja) * 1991-05-24 1993-02-19 Mitsubishi Electric Corp 半導体装置とその製造方法
JPH0541387A (ja) * 1991-08-02 1993-02-19 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH0562986A (ja) * 1991-09-03 1993-03-12 Fujitsu Ltd 半導体装置およびその製造方法
US5302535A (en) * 1991-09-20 1994-04-12 Nec Corporation Method of manufacturing high speed bipolar transistor
JPH05109745A (ja) * 1991-10-18 1993-04-30 Seiko Epson Corp 半導体装置
JPH05109748A (ja) * 1991-10-21 1993-04-30 Seiko Epson Corp 半導体装置およびその製造方法
US5258317A (en) * 1992-02-13 1993-11-02 Integrated Device Technology, Inc. Method for using a field implant mask to correct low doping levels at the outside edges of the base in a walled-emitter transistor structure
US5342794A (en) * 1992-09-10 1994-08-30 Vlsi Technology, Inc. Method for forming laterally graded deposit-type emitter for bipolar transistor
US5338695A (en) * 1992-11-24 1994-08-16 National Semiconductor Corporation Making walled emitter bipolar transistor with reduced base narrowing
US5288652A (en) * 1992-12-18 1994-02-22 Vlsi Technology, Inc. BICMOS-compatible method for creating a bipolar transistor with laterally graded emitter structure
TW224539B (en) * 1993-07-27 1994-06-01 United Microelectronics Corp Bipolar transistor
US5350700A (en) * 1993-12-02 1994-09-27 United Micro Electronics Corporation Method of fabricating bipolar transistors with buried collector region
US5605849A (en) * 1994-10-07 1997-02-25 National Semiconductor Corporation Use of oblique implantation in forming base of bipolar transistor

Also Published As

Publication number Publication date
US5605849A (en) 1997-02-25
EP0797840A2 (en) 1997-10-01
WO1996015549A3 (en) 1996-08-29
WO1996015549A2 (en) 1996-05-23
US5899723A (en) 1999-05-04
EP0797840B1 (en) 2000-05-31
KR100349729B1 (ko) 2003-01-15

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