TW224539B - Bipolar transistor - Google Patents
Bipolar transistorInfo
- Publication number
- TW224539B TW224539B TW82106008A TW82106008A TW224539B TW 224539 B TW224539 B TW 224539B TW 82106008 A TW82106008 A TW 82106008A TW 82106008 A TW82106008 A TW 82106008A TW 224539 B TW224539 B TW 224539B
- Authority
- TW
- Taiwan
- Prior art keywords
- collector
- emitter
- base
- implanting
- depositing
- Prior art date
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
One type of bipolar transistor with buried collector formed by implantingion with large angle has the method of manufacturing: 1. implanting collector/base on the substrate base; 2. depositing polysilicon layer; 3. implanting emitter/base contact area so as to form emitter and basecontact area separately; 4. growing thin oxide layer; 5. depositing tungsten material; 6. overlaying the mask of emitter/base; 7. etching tungsten/thin oxide layer/polysilicon/emitter; 8. overlaying the mask of collector, then etching collector; 9. depositing/etching tungsten material to form spacer; 10. implanting ion with large angle which is proportional to the size of component width with the default range of 15 - 45 degree to form the buried collector with respect to the lower parts of component area; It specified all the bipolar transistors formed by the above proceduresand with the structure of buried collector.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW82106008A TW224539B (en) | 1993-07-27 | 1993-07-27 | Bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW82106008A TW224539B (en) | 1993-07-27 | 1993-07-27 | Bipolar transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
TW224539B true TW224539B (en) | 1994-06-01 |
Family
ID=51348261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW82106008A TW224539B (en) | 1993-07-27 | 1993-07-27 | Bipolar transistor |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW224539B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996015549A2 (en) * | 1994-10-07 | 1996-05-23 | National Semiconductor Corporation | Use of oblique implantation in forming base of bipolar transistor |
-
1993
- 1993-07-27 TW TW82106008A patent/TW224539B/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996015549A2 (en) * | 1994-10-07 | 1996-05-23 | National Semiconductor Corporation | Use of oblique implantation in forming base of bipolar transistor |
US5605849A (en) * | 1994-10-07 | 1997-02-25 | National Semiconductor Corporation | Use of oblique implantation in forming base of bipolar transistor |
US5899723A (en) * | 1994-10-07 | 1999-05-04 | National Semiconductor Corporation | Oblique implantation in forming base of bipolar transistor |
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