TW224539B - Bipolar transistor - Google Patents

Bipolar transistor

Info

Publication number
TW224539B
TW224539B TW82106008A TW82106008A TW224539B TW 224539 B TW224539 B TW 224539B TW 82106008 A TW82106008 A TW 82106008A TW 82106008 A TW82106008 A TW 82106008A TW 224539 B TW224539 B TW 224539B
Authority
TW
Taiwan
Prior art keywords
collector
emitter
base
implanting
depositing
Prior art date
Application number
TW82106008A
Other languages
Chinese (zh)
Inventor
Ming-Tzong Yang
Jong-Jeng Wu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW82106008A priority Critical patent/TW224539B/en
Application granted granted Critical
Publication of TW224539B publication Critical patent/TW224539B/en

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  • Bipolar Transistors (AREA)

Abstract

One type of bipolar transistor with buried collector formed by implantingion with large angle has the method of manufacturing: 1. implanting collector/base on the substrate base; 2. depositing polysilicon layer; 3. implanting emitter/base contact area so as to form emitter and basecontact area separately; 4. growing thin oxide layer; 5. depositing tungsten material; 6. overlaying the mask of emitter/base; 7. etching tungsten/thin oxide layer/polysilicon/emitter; 8. overlaying the mask of collector, then etching collector; 9. depositing/etching tungsten material to form spacer; 10. implanting ion with large angle which is proportional to the size of component width with the default range of 15 - 45 degree to form the buried collector with respect to the lower parts of component area; It specified all the bipolar transistors formed by the above proceduresand with the structure of buried collector.
TW82106008A 1993-07-27 1993-07-27 Bipolar transistor TW224539B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW82106008A TW224539B (en) 1993-07-27 1993-07-27 Bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW82106008A TW224539B (en) 1993-07-27 1993-07-27 Bipolar transistor

Publications (1)

Publication Number Publication Date
TW224539B true TW224539B (en) 1994-06-01

Family

ID=51348261

Family Applications (1)

Application Number Title Priority Date Filing Date
TW82106008A TW224539B (en) 1993-07-27 1993-07-27 Bipolar transistor

Country Status (1)

Country Link
TW (1) TW224539B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996015549A2 (en) * 1994-10-07 1996-05-23 National Semiconductor Corporation Use of oblique implantation in forming base of bipolar transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996015549A2 (en) * 1994-10-07 1996-05-23 National Semiconductor Corporation Use of oblique implantation in forming base of bipolar transistor
US5605849A (en) * 1994-10-07 1997-02-25 National Semiconductor Corporation Use of oblique implantation in forming base of bipolar transistor
US5899723A (en) * 1994-10-07 1999-05-04 National Semiconductor Corporation Oblique implantation in forming base of bipolar transistor

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