JPS6410668A - Npn type bipolar transistor - Google Patents

Npn type bipolar transistor

Info

Publication number
JPS6410668A
JPS6410668A JP16636787A JP16636787A JPS6410668A JP S6410668 A JPS6410668 A JP S6410668A JP 16636787 A JP16636787 A JP 16636787A JP 16636787 A JP16636787 A JP 16636787A JP S6410668 A JPS6410668 A JP S6410668A
Authority
JP
Japan
Prior art keywords
base region
gallium
film
region
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16636787A
Other languages
Japanese (ja)
Other versions
JPH0616513B2 (en
Inventor
Hitoshi Abiko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16636787A priority Critical patent/JPH0616513B2/en
Publication of JPS6410668A publication Critical patent/JPS6410668A/en
Publication of JPH0616513B2 publication Critical patent/JPH0616513B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce base width, by forming at least an inside base region of the base region of an NPN bipolar transistor, by using gallium or indium as impurity. CONSTITUTION:On an n-type single crystal silicon substrate 11, the inside base region as a part of base region is formed with a gallium ion implanted layer 14c. Said inside base region faces an arsenic ion implanted layer 15a as an emitter region. An outside base region surrounding the inside base region is constituted of a boron diffusion layers 14a and 14b. Further, the following are arranged; a silicon dioxide film 12, a polycrystal silicon film 18, a silicon nitride film 19, a polycrystal silicon film 20, a silicon dioxide film 21, a side-wall 23 and an emitter lead-out electrode 17. That is, the inside base region determining the base width is formed of gallium, and the outside base region wherein a parasitic resistance becomes a problem is formed of boron in the same manner as a prior art. Thereby, the base width is reduced, and the parasitic resistance can be decreased.
JP16636787A 1987-07-02 1987-07-02 NPN bipolar transistor manufacturing method Expired - Lifetime JPH0616513B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16636787A JPH0616513B2 (en) 1987-07-02 1987-07-02 NPN bipolar transistor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16636787A JPH0616513B2 (en) 1987-07-02 1987-07-02 NPN bipolar transistor manufacturing method

Publications (2)

Publication Number Publication Date
JPS6410668A true JPS6410668A (en) 1989-01-13
JPH0616513B2 JPH0616513B2 (en) 1994-03-02

Family

ID=15830088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16636787A Expired - Lifetime JPH0616513B2 (en) 1987-07-02 1987-07-02 NPN bipolar transistor manufacturing method

Country Status (1)

Country Link
JP (1) JPH0616513B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03112136A (en) * 1989-09-20 1991-05-13 Philips Gloeilampenfab:Nv Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502476A (en) * 1973-05-07 1975-01-11
JPS54586A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502476A (en) * 1973-05-07 1975-01-11
JPS54586A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03112136A (en) * 1989-09-20 1991-05-13 Philips Gloeilampenfab:Nv Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH0616513B2 (en) 1994-03-02

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